免掺杂碳纳米管基高性能CMOS设备与电路研究

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"高性能免掺杂碳纳米管基CMOS器件和集成电路" 这篇研究论文探讨了在碳纳米管（Carbon Nanotubes, CNTs）基础上构建的高性能、免掺杂的CMOS（互补金属氧化物半导体）设备和集成电路。文章作者是来自北京大学物理化学纳米器件与电子学系的关键实验室的研究团队，包括张志勇、王盛和彭连茂。该论文于2011年在《科学中国物理学报》的特辑中发表，并在Springerlink.com和csb.scichina.com上开放获取。文章重点在于开发无掺杂的n型和p型碳纳米管场效应晶体管（Field-Effect Transistors, FETs），这是构建高性能CMOS集成电路的基础。通过使用钪（Sc）接触半导体单壁碳纳米管（Single-Walled Carbon Nanotubes, SWCNTs）来制造n型CNT-FETs，研究人员进一步优化了栅极结构和绝缘层，使器件性能达到极限。这些n型CNT-FETs在相同栅极长度下超越了硅基n型MOS-FETs，展示了更好的缩放行为。此外，论文还展示了球形p型CNT-FETs的实验证明，这些器件同样具有高传输效率和良好的电荷控制，这为构建全碳纳米管CMOS电路提供了可能。免掺杂的设计可以避免掺杂过程带来的缺陷和不稳定性，从而提高整体器件的性能和可靠性。论文中可能涵盖了以下关键技术点： 1. 碳纳米管的选型和纯化：选择半导体性的SWCNTs，确保器件的开关性能。 2. 斥力材料（如钪）的应用：作为接触材料，改善碳纳米管与电极间的接触电阻。 3. 栅极结构优化：设计和实施优化的栅极结构以提高电荷控制和阈值电压调控。 4. 绝缘层材料研究：探索适合的绝缘材料，提高器件的电荷迁移率和开关比。 5. 高速和低功耗特性：免掺杂的CNT-FETs因无掺杂损耗而展现出高速和低功耗的潜力。 6. 尺寸缩放优势：CNT-FETs在尺寸缩小方面优于硅基MOS-FETs，有利于未来微电子技术的持续发展。这篇论文对高性能免掺杂碳纳米管基CMOS器件的研究，不仅展示了其在技术上的突破，也为未来的纳米电子学和集成电路设计提供了新的思路和方向。

Zhang Z Y, et al. Chin Sci Bull January (2012) Vol.57 No.2-3 137

with the CNT (Figure 1(a)). The properties of Sc-contacted

CNT FETs are shown in Figure 1. The device is an n-type

FET having an ON state at high V

(~10 V) and near-ballistic

ON-state conductance G

0.49G

/h) at 250 K

(Figure 1(b)). The ON-state conductance increases with

decreasing temperature and reaches G

0.62G

at 4.3 K.

The metallic-like temperature dependence of the ON-state

conductance and the almost perfectly linear I

-V

charac-

teristics suggest that electron injection from the Sc electrode

into the conductance band of the CNT is effectively barrier

free; i.e. Sc forms an ohmic contact with the n-channel (i.e.,

the conduction band) of the CNT. At low temperature (4.3 K,

Figure 1(c)), the I

off

ratio exceeds 10

for V

0.1 V.

Although Sc is an ideal electrode metal for n-type CNT

FETs, its exorbitant price and scarcity will prevent large-

scale applications in the future. Yttrium (Y) was then used

to substitute Sc as the contacts for CNT FETs. The perfor-

mance of the Y-contacted CNT FET was compared directly

with that of the Sc-contacted CNT FET, with the FETs fab-

ricated on the same SWCNT adjacent to each other, and

was found that the Y-contacted CNT FETs outperform in

many ways the Sc-contacted CNT FETs [32]. Since Y is

extremely cost effective and widely used in industry, it is

expected that Y-contacted devices will be more suitable for

fabricating large-scale integrated nanoelectronic circuits.

2 Pushing n-type CNT FETs to their

performance limits

In the two years following the realization of p-type ohmic

contacts for CNT FETs, Dai and coworkers [33,34] pushed

the performance of the p-type CNT FET to its limit by

combining ohmic contacts and a high-k gate insulator.

The development of n-type FETs lagged far behind the

development of p-type FETs. Traditionally, n-type CNT

FETs were fabricated through chemical doping such as

doping with K [35]. However, there were two obvious dis-

advantages of chemically doping CNTs. Firstly, it is uncon-

trollable and unstable in air. Secondly, the doped atom in

the CNT reduces carrier mobility by introducing scattering.

In 2005, researchers at Intel benchmarked CNT devices

of the day with some key general parameters including gate

delay and the energy-delay product [36]. The intrinsic gate

delay represents the speed potential of a device, and the

energy-delay product indicates its power dissipation. They

found that the p-type CNT devices outperformed the silicon

p-MOS in terms of both speed and power dissipation.

Figure 1 Back-gated SWCNT-based n-type CNT FET. (a) Transmission electron microscope image showing uniformly Sc-coated CNTs of various diame-

ters; insert: scanning electron microscope image of the device; the bar is 300 nm in length. (b) Low-bias conductance G vs gate voltage V

for an SWCNT

with diameter d

2.0 nm and length L

300 nm. (c) Transfer characteristics of the same device as in (b) for different bias at 4.3 K. Inset: schematic ON- and

OFF-state band diagrams for a device with no Schottky barrier against electron injection into the conduction band of the CNT. (d) I

-V

curves for different

at 4.3 K [31].

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