TSL1401CL光电传感器：线性CCD阵列技术详解
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"TSL1401CL光电传感器是第八届飞思卡尔智能车光电组比赛的专用传感器，是一款线性CCD传感器。"
TSL1401CL光电传感器是一款由TAOS公司生产的高性能线性光感应阵列，特别适用于需要精确光测量的场合，如飞思卡尔智能车光电组竞赛中的应用。该传感器具有128个像素元素，形成了一条128×1的线性传感器阵列，设计紧凑且性能卓越。
这款传感器的关键特性包括：
1. **高分辨率**：传感器的像素间距为400 DPI（点每英寸），每个像素单元尺寸为63.5μm（高）x 55.5μm（宽），中心对中心的像素间距为63.5μm，像素间间隔8μm，这使得它能提供精细的光检测能力。
2. **高线性和均匀性**：TSL1401CL具备优秀的线性响应，确保了光强测量的准确性，同时，它的光响应均匀性高，减少因位置差异导致的测量误差。
3. **宽动态范围**：动态范围高达4000:1，相当于72分贝（dB），意味着传感器可以捕捉从暗到亮的大范围光强变化。
4. **低图像延迟**：图像滞后（图像lag）通常指的是传感器响应速度，TSL1401CL的图像滞后仅为0.5%典型值，表明其快速的响应能力。
5. **操作频率**：该传感器可工作在高达8MHz的频率下，适应高速数据采集需求。
6. **电源要求**：单个3V至5V的电源供电，降低了系统复杂性和功耗。
7. **输出特性**：输出参考地，具有轨到轨输出摆幅（AO），无需外部负载电阻，简化了电路设计。
8. **封装形式**：采用无铅、符合RoHS标准的焊锡凸点线性阵列封装，提高了环境友好性。
9. **控制逻辑**：内部集成的控制逻辑仅需一个串行输入（SI）信号和时钟信号，便于用户操作。
TSL1401CL是一款高性能、易于使用的线性光电传感器，适合于需要精确光测量的自动化设备、光学检测系统以及在复杂环境下的智能车辆导航等应用。其高效能和易用性使其成为飞思卡尔智能车光电组的理想选择。
TSL1401CS−LF
128 × 1 LINEAR SENSOR ARRAY WITH HOLD
TAOS072E − APRIL 2007
4
r
r
Copyright E 2007, TAOS Inc.
The LUMENOLOGY r Company
www.taosinc.com
Electrical Characteristics at f
clock
= 1 MHz, V
DD
= 5 V, T
A
= 25°C, λ
p
= 640 nm, t
int
= 5 ms,
R
L
= 330 Ω, E
e
= 11 μW/cm
2
(unless otherwise noted) (see Note 3 and Note 4)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
out
Analog output voltage (white, average over 128 pixels) See Note 4 1.6 2 2.4 V
V
drk
Analog output voltage (dark, average over 128 pixels) E
e
= 0 0 0.1 0.2 V
PRNU Pixel response nonuniformity See Note 5 ±4% ± 10%
Nonlinearity of analog output voltage See Note 6 ±0.4% FS
Output noise voltage See Note 7 1 mVrms
R
e
Responsivity See Note 8 25 35 44
V/
(μJ/cm
2
)
V
Analog output saturation voltage
V
DD
= 5 V, R
L
= 330 Ω 4.5 4.8
V
V
sat
Analog output saturation voltage
V
DD
= 3 V, R
L
= 330 Ω 2.5 2.8
V
SE
Saturation exposure
V
DD
= 5 V, See Note 9 136
nJ/cm
2
SE Saturation exposure
V
DD
= 3 V, See Note 9 78
nJ/cm
2
DSNU Dark signal nonuniformity All pixels, E
e
= 0 See Note 10 0.02 0.05 V
IL Image lag See Note 11 0.5%
I
Supply current
V
DD
= 5 V, E
e
= 0 2.8 4.5
mA
I
DD
Supply current
V
DD
= 3 V, E
e
= 0 2.6 4.5
mA
I
IH
High-level input current V
I
= V
DD
1 μA
I
IL
Low-level input current V
I
= 0 1 μA
C
i
Input capacitance 5 pF
NOTES: 3. All measurements made with a 0.1 μF capacitor connected between V
DD
and ground.
4. The array is uniformly illuminated with a diffused LED source having a peak wavelength of 640 nm.
5. PRNU is the maximum difference between the voltage from any single pixel and the average output voltage from all pixels of the
device under test when the array is uniformly illuminated at the white irradiance level. PRNU includes DSNU.
6. Nonlinearity is defined as the maximum deviation from a best-fit straight line over the dark-to-white irradiance levels, as a percent
of analog output voltage (white).
7. RMS noise is the standard deviation of a single-pixel output under constant illumination as observed over a 5-second period.
8. R
e(min)
= [V
out(min)
− V
drk(max)
] ÷ (E
e
× t
int
)
9. SE(min) = [V
sat(min)
− V
drk(min)
] × 〈E
e
× t
int
) ÷ [V
out(max)
− V
drk(min)
]
10. DSNU is the difference between the maximum and minimum output voltage for all pixels in the absence of illumination.
11. Image lag is a residual signal left in a pixel from a previous exposure. It is defined as a percent of white-level signal remaining after
a pixel is exposed to a white condition followed by a dark condition:
IL +
V
out (IL)
* V
drk
V
out (white)
* V
drk
100
Timing Requirements (see Figure 1 and Figure 2)
MIN NOM MAX UNIT
t
su(SI)
Setup time, serial input (see Note 12) 20 ns
t
h(SI)
Hold time, serial input (see Note 11 and Note 13) 0 ns
t
w
Pulse duration, clock high or low 50 ns
t
r
, t
f
Input transition (rise and fall) time 0 500 ns
t
qt
Pixel charge transfer time 20 μs
NOTES: 12. Input pulses have the following characteristics: t
r
= 6 ns, t
f
= 6 ns.
13. SI must go low before the rising edge of the next clock pulse.
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