6
TPD12S015A
ZHCS354D –JUNE 2011–REVISED JULY 2016
www.ti.com.cn
Copyright © 2011–2016, Texas Instruments Incorporated
Recommended Operating Conditions (continued)
over recommended operating free-air temperature range (unless otherwise noted)
SUPPLY MIN NOM MAX UNIT
V
IL
Low-level input voltage
SCL_A, SDA_A,
CEC_A
V
CCA
= 1.1 V to 3.6 V
0
0.082 ×
V
CCA
V
CT_CP_HPD, LS_OE 0 0.4
SCL_B, SDA_B
5VOUT = 5 V
0
0.3 ×
5VOUT
CEC_B 0
0.3 × 3.3V
(internal)
(1)
HPD_B 0 0.8
V
ILC
Low-level input voltage
(contention)
SCL_A, SDA_A,
CEC_A
V
CCA
= 1.1 V to 3.6 V 0
0.065 ×
V
CCA
V
V
OL
–
V
ILC
Delta between V
OL
and V
ILC
SCL_A, SDA_A,
CEC_A
V
CCA
= 1.1 V to 3.6 V
0.1 ×
V
CCA
V
T
A
Operating free-air temperature –40 85 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC
(1)
TPD12S015A
UNITYFF (DSBGA)
28 PINS
R
θJA
Junction-to-ambient thermal resistance 63 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 0.4 °C/W
R
θJB
Junction-to-board thermal resistance 9.2 °C/W
ψ
JT
Junction-to-top characterization parameter 1.6 °C/W
ψ
JB
Junction-to-board characterization parameter 9.1 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance N/A °C/W
6.5 Electrical Characteristics: I
CC
PARAMETER PIN TEST CONDITIONS MIN TYP MAX UNIT
I
CCA
Standby
V
CCA
I/O = High
2
µA
Active 15
I
CCB
Standby
V
BAT
CT_CP_HPD=L, LS_OE=L, HPD_B=L 2 µA
DC-DC and HPD active CT_CP_HPD=H, LS_OE=L, HPD_B=L 30 50
DC-DC, HPD, DDC, CEC
active
CT_CP_HPD=H LS_OE=H, HPD_B=L,
I/O =H
225 300
6.6 Electrical Characteristics: High-Speed ESD Lines: Dx, CLK
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
OFF
Current from IO port to supply
pins
V
CC
= 0 V, V
IO
= 3.3 V
0.01 0.5 µA
V
DL
Diode forward voltage I
D
= 8 mA, Lower clamp diode 0.85 1 V
R
DYN
Dynamic resistance I = 1 A D, CLK 1 Ω
C
IO
IO capacitance
V
CC
= 5 V
V
IO
= 2.5 V
D, CLK
1.3 pF
V
BR
Break-down voltage I
IO
= 1 mA 9 12 V
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