英飞凌TLE94103EP芯片中文规格书：汽车级三半桥驱动器

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"TLE94103EP 英飞凌芯片 INFINEON 中文版规格书手册提供了这款芯片的详细技术参数和应用领域。" 英飞凌的TLE94103EP是一款专为汽车运动控制应用设计的三通道半桥驱动器，如HVAC（暖通空调）中的直流电机、单稳态和双稳态继电器以及侧视镜的X-Y调整。这款芯片具备多种保护功能和诊断能力，确保在严苛的汽车环境中可靠运行。主要特性包括： 1. 三个半桥功率输出：该芯片可以驱动三个独立的半桥电路，适用于电机控制。 2. 睡眠模式下极低功耗：在不活动时，芯片进入低功耗模式，节省能源。 3. 兼容3.3V/5V输入：输入电压范围广泛，适应不同系统需求，并带有滞后特性，增强稳定性。 4. 过载和短路保护：所有输出端都具备这样的保护机制，防止电路损坏。 5. 独立诊断输出：能够检测每个输出端的过电流和开路情况。 6. ON状态下对所有高侧和低侧的开路诊断：即使在工作期间也能进行故障检测。 7. 16位标准SPI接口：支持菊花链连接和帧响应功能，便于控制和诊断。 8. 全局错误标志快速诊断：通过一个全局错误标志，能迅速识别系统中存在的问题。 9. 过热预警告和保护：在温度达到危险水平前给出警告，并自动采取保护措施。 10. 过压和欠压锁定：防止电源电压过高或过低导致的设备损坏。 11. 交叉电流保护：防止电流在不同通道间异常流动，确保系统稳定。产品验证方面，TLE94103EP已通过汽车应用的AEC-Q100标准验证，保证了其在汽车环境中的可靠性。总结来说，TLE94103EP是汽车电子领域的一款关键元件，尤其适用于需要精确控制和高效保护的场合。其丰富的保护特性和诊断功能使其成为汽车电机控制系统的理想选择。用户在设计使用该芯片的系统时，应参考规格书中的详细信息，以确保正确配置和安全运行。

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Datasheet 11 1.0

2017-12-07

TLE94103EP

General Product Characteristics

3.2 Functional Range

Note: Within the normal functional range the IC operates as described in the circuit description. The

electrical characteristics are specified within the conditions given in the related electrical

characteristics table.

Table 3 Functional Range

Parameter Symbol Values Unit Note or

Test Condition

Number

Min. Typ. Max.

Supply voltage range for

normal operation

S(nor)

5.5 – 20 V – P_4.2.1

Logic supply voltage range for

normal operation

3.0 – 5.5 V – P_4.2.3

Logic input voltages

(SDI, SCLK, CSN, EN)

SDI

SCLK

CSN

, V

-0.3 – 5.5 V – P_4.2.4

Junction temperature T

-40 – 150 °C P_4.2.5

Datasheet 12 1.0

2017-12-07

TLE94103EP

General Product Characteristics

3.3 Thermal Resistance

Table 4 Thermal Resistance TLE94103EP

Parameter Symbol Values Unit Note or

Test Condition

Number

Min. Typ. Max.

Junction to Case, T

= -40°C R

thjC_cold

–16–K/W

Junction to Case, T

= 85°C R

thjC_hot

–19–K/W

Junction to ambient, T

= -40°C

(1s0p, minimal footprint)

thjA_cold_

min

– 136 – K/W

1) Not subject to production test, specified by design.

2) Specified R

thJA

value is according to JEDEC JESD51-2, -3 at natural convection on FR4 1s0p board; The product (chip

+ package) was simulated on a 76.2 x 114.3 x 1.5mm board with minimal footprint copper area and 35µm thickness.

Ta = -40°C, each channel dissipates 0.2W. Ta = 85°C, each channel dissipates 0.135W.

Junction to ambient, T

= 85°C

(1s0p, minimal footprint)

thjA_hot_m

– 148 – K/W

Junction to ambient, T

= -40°C

(1s0p, 300mm2 Cu)

thjA_cold_3

–79–K/W

3) Specified R

thJA

value is according to JEDEC JESD51-2, -3 at natural convection on FR4 1s0p board; The product (chip

+ package) was simulated on a 76.2 x 114.3 x 1.5mm board with additional cooling of 300mm2 copper area and 35µm

thickness. Ta = -40°C, each channel dissipates 0.2W. Ta = 85°C, each channel dissipates 0.135W.

Junction to ambient, T

= 85°C

(1s0p, 300mm2 Cu)

thjA_hot_30

–95–K/W

Junction to ambient, T

= -40°C

(1s0p, 600mm2 Cu)

thjA_cold_6

–77–K/W

Junction to ambient, T

= 85°C

(1s0p, 600mm2 Cu)

thjA_hot_60

–94–K/W

4) Specified R

thJA

value is according to JEDEC JESD51-2, -3 at natural convection on FR4 1s0p board; The product (chip

+ package) was simulated on a 76.2 x 114.3 x 1.5mm board with additional cooling of 600mm2 copper area and 35µm

thickness. Ta = -40°C, each channel dissipates 0.2W. Ta = 85°C, each channel dissipates 0.135W.

Junction to ambient, T

= -40°C

(2s2p)

thjA_cold_2

s2p

–63–K/W

5) Specified R

thJA

value is according to JEDEC JESD51-2, -3 at natural convection on FR4 2s2p board; The product (chip

+ package) was simulated on a 76.2 x 114.3 x 1.5mm board with two inner copper layers ( 4 x 35µm Cu). Ta = -40°C,

each channel dissipates 0.2W. Ta = 85°C, each channel dissipates 0.135W.

Junction to ambient, T

= 85°C

(2s2p)

thjA_hot_2s

–82–K/W

Datasheet 13 1.0

2017-12-07

TLE94103EP

General Product Characteristics

3.4 Electrical Characteristics

Table 5 Electrical Characteristics, V

=5.5 V to 20 V, V

= 3.0V to 5.5V, T

= -40°C to +150°C, EN= HIGH,

OUTn

= 0 A; Typical values refer to V

= 5.0 V, V

= 13.5 V and T

= 25 °C unless otherwise

specified; all voltages with respect to ground, positive current flowing into pin (unless

otherwise specified)

Parameter Symbol Values Unit Note or

Test Condition

Number

Min. Typ. Max.

Current Consumption, EN = GND

Supply Quiescent current I

– 0.1 2 µA -40°C ≤ T

≤ 85°C P_4.4.1

Logic supply quiescent current I

DD_Q

– 0.1 1 µA -40°C ≤ T

≤ 85°C P_4.4.2

Total quiescent current I

DD_Q

– 0.6 3 µA -40°C ≤ T

≤ 85°C P_4.4.3

Current Consumption, EN=HIGH

Supply current I

– 0.13 0.5 mA Power drivers and

power stages are

off

P_4.4.4

Supply current I

S_HSON

– 1.5 3 mA All high-sides ON

1)2)

P_4.4.101

Logic supply current I

– 0.6 2.5 mA SPI not active P_4.4.5

Logic supply current I

DD_RUN

–2.5–mASPI 5MHz

P_4.4.6

Total supply current I

DD_RUN

–2.7–mASPI 5MHz

P_4.4.7

Over- and Undervoltage Lockout

Undervoltage Switch ON

voltage threshold

UV ON

4.4 4.90 5.3 V V

increasing P_4.4.8

Undervoltage Switch OFF

voltage threshold

UV OFF

4 4.50 4.9 V V

decreasing P_4.4.9

Undervoltage Switch ON/OFF

hysteresis

UV HY

–0.40–VV

UV ON

- V

UV OFF

P_4.4.10

Overvoltage Switch OFF voltage

threshold

OV OFF

21 23 25 V V

increasing P_4.4.11

Overvoltage Switch ON voltage

threshold

OV ON

20 22 24 V V

decreasing P_4.4.12

Overvoltage Switch ON/OFF

hysteresis

OV HY

–1–VV

OV OFF

- V

OV ON

P_4.4.13

Power-On-Reset V

DD POR

2.40 2.63 2.90 V V

increasing P_4.4.14

Power-Off-Reset V

DD POffR

2.35 2.57 2.85 V V

decreasing P_4.4.15

Power ON/OFF hysteresis V

DD POR HY

–0.06–VV

DD POR

- V

DD POffR

P_4.4.98

Static Drain-source ON-Resistance (High-Side or Low-Side)

High-Side or Low-Side R

DSON

(all outputs)

DSON_HB_25C

– 825 1200 mΩ I

OUT

= ±0.5 A;

= 25 °C

P_4.4.16

High-Side or Low-Side R

DSON

(all outputs)

DSON_HB_150

– 1350 1800 mΩ I

OUT

= ±0.5 A;

= 150 °C

P_4.4.17

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