"高效GaN基微型LED显示芯片模型优化研究"

Micro-LED (Micro-LED) display chips, reducing the size of display chips brings sidewall effects, leading to a decrease in the forward light extraction efficiency (LEE). The structure of high-efficiency Micro-LED display chips is still under study. From a simulation perspective, we explore the optimization model of high-efficiency GaN-based Micro-LEDs based on the finite difference time domain method. First, we construct the initial vertical sidewall GaN-based Micro-LED layer structure and quantitatively analyze the impact of sidewall effects on LEE. Then, we explore the effect of the position of the active layer of the Micro-LED multiple quantum wells on light emission, analyze the Micro-LED structure model under different sidewall tilt conditions, discuss the effect of bottom reflection materials on LEE, and obtain preliminary optimized parameters of GaN-based Micro-LED models. Finally, by designing top transmissive gratings to further improve LEE, we discuss the impact of grating period, grating height, and duty cycle on LEE. The results show that the overall LEE of the optimized GaN-based Micro-LED has increased by 2.42 times compared to the initial structure. In conclusion, through the research and optimization of the simulation model of high-efficiency GaN-based Micro-LEDs, we have successfully improved the light extraction efficiency and laid a solid foundation for the further development of high-performance Micro-LED display technology.