TI CC2652P7：集成功率放大器的2.4GHz无线单片机
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更新于2024-06-28
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收藏 1.44MB PDF 举报 TI-CC2652P7是一款高性能的SimpleLink™多协议2.4GHz无线微控制器，集成了强大的ARM Cortex-M4F处理器和低功耗特性，使其在物联网(IoT)和无线通信领域表现出色。这款设备的主要特点包括：
1. 处理能力：CC2652P7搭载了一颗48 MHz的Cortex-M4F处理器，提供了丰富的计算性能，支持复杂的算法和任务执行。
2. 存储容量：它拥有704 KB的闪存程序内存，可以存储大量程序代码和数据；256 KB的ROM用于存放协议和库函数，确保了功能的稳定性和兼容性；8 KB的高速缓存SRAM提高了数据访问速度。
3. 驱动与协议支持：内置动态多协议管理器(DMM)驱动，能够支持多种无线通信标准，如2.4 GHz (G)FSK、4.0 GHz (G)FSK、MSK、蓝牙5.2低功耗模式、IEEE 802.15.4物理层(PHY)和媒体访问控制(MAC)等，这使得它能够在各种无线网络环境中灵活工作。
4. 可升级性：支持空中固件升级(Over-the-Air Upgrade, OTA)，便于系统更新和维护。
5. 传感器控制：内部有独立的超低功耗传感器控制器，支持自主MCU运行，具有4 KB SRAM，能够实时采样、存储和处理传感器数据，并且具备快速唤醒功能，实现节能操作。
6. 电源效率：CC2652P7在不同工作模式下的功耗非常低，如活跃模式下3.10 mA，运行CoreMark时降至65 μA/MHz，睡眠模式下仅0.9 μA（包括RTC和144 KB RAM），而在待机模式下甚至更低，只有0.1 μA，当接收到外部触发时能快速唤醒。此外，传感器控制器在不同频率下也有显著的低功耗表现。
7. 射频性能：接收器(RX)电流为6.4 mA，在+10 dBm发射功率下，发射器(TX)电流为21 mA；在+20 dBm发射功率下，TX电流增加到101 mA。这些参数反映了其在无线通信过程中的功耗优化。
TI-CC2652P7凭借其卓越的处理能力、丰富的存储选项、多协议支持以及低功耗特性，成为物联网应用的理想选择，特别适用于那些对能耗敏感、需要多种无线连接选项以及持续软件升级的场景。
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
(2)
MIN MAX UNIT
VDDS
(3)
Supply voltage –0.3 4.1 V
Voltage on any digital pin
(4)
–0.3 VDDS + 0.3, max 4.1 V
Voltage on crystal oscillator pins, X32K_Q1, X32K_Q2, X48M_N and X48M_P –0.3 VDDR + 0.3, max 2.25 V
V
in
Voltage on ADC input
Voltage scaling enabled –0.3 VDDS
VVoltage scaling disabled, internal reference –0.3 1.49
Voltage scaling disabled, VDDS as reference –0.3 VDDS / 2.9
Input level, RF pins (RF_P and RF_N) 5 dBm
T
stg
Storage temperature –40 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to ground, unless otherwise noted.
(3) VDDS_DCDC, VDDS2 and VDDS3 must be at the same potential as VDDS.
(4) Including analog capable DIOs.
7.2 ESD Ratings
VALUE UNIT
V
ESD
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS001
(1)
All pins ±2000 V
Charged device model (CDM), per JESD22-C101
(2)
All pins ±500 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Operating ambient temperature
(1)
(3)
–40 105 °C
Operating junction temperature
(1)
(3)
–40 115 °C
Operating supply voltage (VDDS) 1.8 3.8 V
Rising supply voltage slew rate 0 100 mV/µs
Falling supply voltage slew rate
(2)
0 20 mV/µs
(1) Operation at or near maximum operating temperature for extended durations will result in a reduction in lifetime.
(2) For small coin-cell batteries, with high worst-case end-of-life equivalent source resistance, a 22-µF VDDS input capacitor must be used
to ensure compliance with this slew rate.
(3) For thermal resistance characteristics refer to Section 7.8.
www.ti.com
CC2652P7
SWRS252A – MAY 2021 – REVISED NOVEMBER 2021
Copyright © 2021 Texas Instruments Incorporated
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