DS90UR905Q-Q1：FPD-LinkII 24位彩色串行器与解串器

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"TI-DS90UR905Q-Q1.pdf" 是关于TI公司的一款FPD-Link串行器的产品文档，该器件主要用于视频和图像数据的传输。 FPD-Link串行器是一种集成电路，它在视频系统中扮演着关键角色，将并行的RGB数字视频信号转换为串行格式，以便通过单对差分信号线（STP Cable）进行长距离传输。TI的DS90UR905Q-Q1和DS90UR906Q-Q1是这种串行器和解串器的型号，它们工作在5到65MHz的像素时钟频率范围内，支持的数据速率高达1.82Gbps，适合高分辨率视频应用。该设备的关键特性包括： 1. **宽频率支持**：支持5到65MHz的像素时钟频率，意味着它可以处理不同速度的视频流，范围从较低的QVGA（ Quarter Video Graphics Array）到较高的XGA（Extended Graphics Array）分辨率。 2. **长距离传输**：采用交流耦合单对屏蔽双绞线（STP Cable），可以实现长达10米的无损传输，确保信号质量。 3. **集成终端**：串行器和解串器内建终端电阻，有助于减少信号反射，保持信号完整性。 4. **内置BIST功能**：提供@SPEED链路自我测试（Built-In Self Test，BIST）模式和报告引脚，可以检测和报告链路状态，增强了系统的可靠性。 5. **I2C兼容性**：支持可选的I2C兼容串行控制总线，使得配置和控制更为灵活方便。 6. **视频信号支持**：支持RGB888格式的视频信号，包含垂直同步（VS）、水平同步（HS）和数据使能（DE）信号，适用于多种显示接口。 7. **低功耗模式**：具备断电模式，可以在不使用时降低功耗，以满足能源效率要求。这些特性使得DS90UR90xQ-Q1系列适用于汽车、工业和消费电子等领域的高清视频传输应用。在设计过程中，应参考最新的英文版数据表以获取详细的技术规格和设计指导。此外，TI官网提供了相关技术文档、工具软件以及社区支持，便于开发者进行设计和问题解决。

DS90UR905Q-Q1

DS90UR906Q-Q1

ZHCSB29I –SEPTEMBER 2009–REVISED OCTOBER 2019

www.ti.com.cn

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office or Distributors for availability and

specifications.

(3) For soldering specifications see product folder at www.ti.com and SNOA549.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)(2)(3)

MIN MAX UNIT

Supply voltage – V

DDn

(1.8 V) –0.3 2.5 V

Supply voltage – V

DDIO

–0.3 4 V

LVCMOS I/O voltage –0.3 VDDIO + 0.3 V

Receiver input voltage –0.3 VDD + 0.3 V

Driver output voltage –0.3 VDD + 0.3 V

Junction temperature 150 °C

48L RHS package

Maximum power dissipation capacity at 25°C 215 mW

Derate above 25°C 1/θ

mW/°C

60L NKB package

Maximum power dissipation capacity at 25°C 470 mW

Derate above 25°C 1/θ

mW/°C

Storage temperature –65 150 °C

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

(2) R

= 2 kΩ, C

= 150 pF or R

= 2 kΩ, C

= 330 pF or R

= 330 Ω, C

= 150 pF

(3) R

= 330 Ω, C

= 330 pF

7.2 ESD Ratings

VALUE UNIT

(ESD)

Electrostatic discharge

Human body model (HBM), per AEC Q100-002

(1)

±8000

Charged-device model (CDM), per AEC Q100-011 ±1000

Machine Model (MM) ±250

ISO10605

(2)

Air Discharge (D

OUT+

, D

OUT−

) ≥±30000

Contact Discharge (D

OUT+

, D

OUT−

) ≥±10000

Air Discharge (R

IN+

, R

IN−

) ≥±30000

Contact Discharge (R

IN+

, R

IN−

) ≥±10000

ISO10605

(3)

Air Discharge (D

OUT+

, D

OUT−

) ≥±15000

Contact Discharge (D

OUT+

, D

OUT−

) ≥±10000

Air Discharge (R

IN+

, R

IN−

) ≥±15000

Contact Discharge (R

IN+

, R

IN−

) ≥±10000

IEC 61000-4-2

(3)

Air Discharge (D

OUT+

, D

OUT−

) ≥±25000

Contact Discharge (D

OUT+

, D

OUT−

) ≥±8000

Air Discharge (R

IN+

, R

IN−

) ≥±25000

Contact Discharge (R

IN+

, R

IN−

) ≥±8000

DS90UR905Q-Q1

DS90UR906Q-Q1

www.ti.com.cn

ZHCSB29I –SEPTEMBER 2009–REVISED OCTOBER 2019

(1) Supply noise testing was done with minimum capacitors on the PCB. A sinusoidal signal is AC coupled to the V

DDn

(1.8-V) supply with

amplitude = 100 mVp-p measured at the device V

DDn

pins. Bit error rate testing of input to the serializer and output of the deserializer

with 10 meter cable shows no error when the noise frequency on the serializer is less than 750 kHz. The deserializer on the other hand

shows no error when the noise frequency is less than 400 kHz.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN NOM MAX UNIT

Supply voltage (V

DDn

) 1.71 1.8 1.89 V

LVCMOS supply voltage (V

DDIO

) 1.71 1.8 1.89

OR LVCMOS supply voltage (V

DDIO

) 3 3.3 3.6

Operating free-air temperature (T

) −40 25 105 °C

PCLK clock frequency 5 65 MHz

Supply noise

(1)

50 mV

P-P

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

(2) Based on nine thermal vias.

7.4 Thermal Information

THERMAL METRIC

(1)

DS90UR905Q-Q1 DS90UR906Q-Q1

UNITRHS (WQFN) NKB (WQFN)

48 PINS 60 PINS

θJA

Junction-to-ambient thermal resistance

(2)

30.3 26.9 °C/W

θJC(top)

Junction-to-case (top) thermal resistance

(2)

11.5 9.1 °C/W

θJB

Junction-to-board thermal resistance 7.3 6.0 °C/W

Junction-to-top characterization parameter 0.1 0.1 °C/W

Junction-to-board characterization parameter 7.3 6.0 °C/W

θJC(bot)

Junction-to-case (bottom) thermal resistance 2.7 1.5 °C/W

(1) The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as

otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and

are not ensured.

(2) Typical values represent most likely parametric norms at V

= 3.3 V, T

= 25°C, and at the Recommended Operating Conditions at the

time of product characterization and are not ensured.

(3) Current into device pins is defined as positive. Current out of a device pin is defined as negative. Voltages are referenced to ground

except VOD, ΔVOD, VTH and VTL which are differential voltages.

7.5 Serializer DC Electrical Characteristics

over recommended operating supply and temperature ranges unless otherwise specified.

(1)(2)(3)

PARAMETER TEST CONDITIONS PIN / FREQ MIN TYP MAX UNIT

LVCMOS INPUT DC SPECIFICATIONS

High-level input voltage

DDIO

= 3.0 to 3.6 V

R[7:0],

G[7:0],

B[7:0],

HS, VS, DE,

PCLK, PDB,

VODSEL,

RFB,

CONFIG[1:0],BIS

TEN

2.2 V

DDIO

= 1.71 to 1.89 V

0.65 ×

DDIO

Low-level input voltage

DDIO

= 3.0 to 3.6 V GND 0.8 V

DDIO

= 1.71 to 1.89 V GND

0.35 ×

DDIO

Input current V

= 0 V or V

DDIO

= 3.0

to 3.6 V

–15 ±1 +15 μA

DDIO

= 1.7

to 1.89 V

–15 ±1 +15 μA

DS90UR905Q-Q1

DS90UR906Q-Q1

ZHCSB29I –SEPTEMBER 2009–REVISED OCTOBER 2019

www.ti.com.cn

Serializer DC Electrical Characteristics (continued)

over recommended operating supply and temperature ranges unless otherwise specified.

(1)(2)(3)

PARAMETER TEST CONDITIONS PIN / FREQ MIN TYP MAX UNIT

LVDS DRIVER DC SPECIFICATIONS

Differential output

voltage

= 100 Ω,

De-emph = disabled,

Figure 2

VODSEL = 0

DOUT+, DOUT –

±205 ±280 ±355

VODSEL = 1 ±320 ±420 ±520

ODp-p

Differential output

voltage

(DOUT+) – (DOUT-)

VODSEL = 0

DOUT+, DOUT –

560

mVp-p

VODSEL = 1 840

ΔV

Output voltage

unbalance

= 100 Ω, De-emph = disabled, VODSEL = L

DOUT+, DOUT –

1 50 mV

Offset voltage – single-

ended

at TP A and B, Figure 1

= 100 Ω,

De-emph = disabled

VODSEL = 0 1.65

VODSEL = 1 1.575

ΔV

Offset voltage

unbalance

Single-ended

at TP A and B, Figure 1

= 100 Ω, De-emph = disabled

DOUT+, DOUT –

1 mV

Output short circuit

current

DOUT± = 0 V,

De-emph = disabled

VODSEL = 0 –36 mA

Internal termination

resistor

80 100 120 Ω

SUPPLY CURRENT

DDT1

Serializer

supply current

(includes load current)

= 100 Ω, f = 65 MHz

Checker Board Pattern,

De-emph = 3 KΩ

VODSEL = H, Figure 9

= 1.89 V All V

pins 75 85

mAV

DDIO

= 1.89 V

DDIO

3 5

DDIOT1

DDIO

= 3.6 V 11 15

DDT2

Checker Board Pattern,

De-emph = 6 KΩ,

VODSEL = L, Figure 9

= 1.89 V All V

pins 65 75

mAV

DDIO

= 1.89 V

DDIO

3 5

DDIOT2

DDIO

= 3.6 V 11 15

DDZ

Serializer

cupply current power

down

PDB = 0 V , (All other

LVCMOS Inputs = 0 V)

= 1.89 V All V

pins 40 1000

μAV

DDIO

= 1.89 V

DDIO

5 10

DDIOZ

DDIO

= 3.6 V 10 20

7.6 Deserializer DC Electrical Characteristics

over recommended operating supply and temperature ranges unless otherwise specified.

PARAMETER TEST CONDITIONS PIN / FREQ MIN TYP MAX UNIT

3.3 V I/O LVCMOS DC SPECIFICATIONS – V

DDIO

= 3.0 to 3.6 V

High-level input voltage

PDB, BISTEN

2.2 V

DDIO

Low-level input voltage GND 0.8 V

Input current V

= 0 V or V

DDIO

−15 ±1 15 μA

High-level output voltage

= −2 mA,

OS_PCLK/DATA = L

R[7:0], G[7:0],

B[7:0], HS,VS,

DE, PCLK,

LOCK, PASS

2.4 V

DDIO

Low-level output voltage

= +2 mA,

OS_PCLK/DATA = L

R[7:0], G[7:0],

B[7:0], HS, VS,

DE,PCLK,

LOCK, PASS

GND 0.4 V

Output short circuit current

DDIO

= 3.3 V

OUT

= 0 V,

OS_PCLK/DATA = L/H

PCLK 36 mA

Output short circuit current

DDIO

= 3.3 V

OUT

= 0 V,

OS_PCLK/DATA = L/H

Deserializer

Outputs

37 mA

TRI-STATE output current

PDB = 0 V, OSS_SEL = 0

V, V

OUT

= H

Outputs −15 15 µA

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