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优化鳍架构提升AlGaN/GaN FinFET线性特性的研究
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本文研究了鳍结构对氮化铝/氮化镓FinFET(Field-Effect Transistor)的线性特性的具体影响,发表在《中国物理B》(Chin.Phys.B)杂志2018年第4期,卷号27,文章编号047307。研究团队由刘婷婷等人组成,分别来自中国的中国电子设备与系统工程公司和南京电子器件研究所。 研究发现,当FinFET的鳍结构尺寸减小时,其沟道电导率(Gm)特性表现出显著的线性增强,相比于具有较长鳍或平面HEMT(High Electron Mobility Transistor)的器件,其非线性效应明显降低。这表明,对于AlGaN/GaN FinFET而言,源电阻而非栅极结构本身对Gm行为起主导作用。这意味着优化的FinFET设计能够提供更优良的线性性能,这对于微电子器件的低功耗和高性能应用至关重要。 作者通过对比分析不同鳍结构的FinFET,揭示了鳍尺寸对晶体管动态性能的关键影响。较小的鳍尺寸不仅有助于提高器件的开关速度,减少寄生效应,还能改善电流驱动能力,从而提升整个电路的稳定性。同时,文中也提到了优化后的FinFET在功率效率上的提升,这意味着在保持高频率操作的同时,能更好地控制和管理能耗,这对于现代高性能集成电路中的功率管理至关重要。 这项研究的结果对设计和制造高性能、低功耗的AlGaN/GaN FinFET有着重要的指导意义,对于推动第三代半导体材料在微电子领域的广泛应用和发展具有深远影响。它强调了在器件设计中精细调整鳍结构参数以达到最优性能的重要性,这将有助于未来纳米尺度电子器件的进步。
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CPB Online In-PressCPB Online In-Press
Chin. Phys. B Vol. 27, No. 4 (2018) 047307
Influence of fin architectures on linearity characteristics of
AlGaN/GaNFinFETs
∗
Ting-Ting Liu(刘婷婷)
1
, Kai Zhang(张凯)
2, †
, Guang-Run Zhu(朱广润)
2
, Jian-Jun Zhou(周建军)
2
,
Yue-Chan Kong(孔月婵)
2
, Xin-Xin Yu(郁鑫鑫)
2
, and Tang-Sheng Chen(陈堂胜)
2
1
Research Institution, China Electronic Equipment & System Engineering Company, Beijing 100039, China
2
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China
(Received 12 November 2017; revised manuscript received 2 January 2018; published online 10 March 2018)
We investigate the influence of fin architecture on linearity characteristics of AlGaN/GaNFinFET. It is found that
the FinFET with scaled fin dimensions exhibits much flatter G
m
characteristics than the one with long fins as well as
planar HEMT. According to the comparative study, we provide the direct proof that source resistance rather than tri-gate
structure itself dominates the G
m
behavior. Furthermore, power measurements show that the optimized FinFET is capable
of delivering a much higher output power density along with significant improvement in linearity characteristics than
conventional planar HEMT. This study also highlights the importance of fin design in GaN-based FinFET for microwave
power application, especially high-linearity applications.
Keywords: AlGaN/GaNFinFETs, output power density, linearity characteristics
PACS: 73.61.Ey, 52.77.Bn, 73.40.Qv DOI: 10.1088/1674-1056/27/4/047307
1. Introduction
Recently, GaNFinFETs or tri-gate HEMTs have drawn
considerable attention because of their potential advantages
over conventional planar HEMTs. Better suppression of
short channel effects (SCEs) from enhanced gate control of
additional sidewall gates,
[1,2]
and possible higher electron
velocity
[3]
would enable further scaling of the gate length
for high-speed device application. Besides, positive thresh-
old voltage (V
TH
) shift and better electrostatics also make
them a very promising candidate for the power electronics
applications.
[4,5]
To date, there have been multiple demon-
strations of GaNFinFETs with varied structures.
[1–9]
One of
key differences between them lies in the relative position be-
tween fins and gate electrode. As suggested by previous work,
these fin variants are likely to bring a difference to G
m
behav-
ior and thus the linearity characteristics of devices. Azize et
al. reported a broader G
m
curve in a FinFET featuring nano-
fins along the entire area between source and drain than in
planar HEMTs.
[7]
Similarly, improvement in G
m
flatness for
Al(In)N/GaN fin-type HEMTs was also observed in Ref. [8]
where the formed fins still extended beyond the gate region.
On the other hand, extremely high linearity characteristics of
G
m
and f
T
were achieved by forming InAlN/GaN fins only
under the gate electrode in a self-aligned way.
[9]
Recently,
our group demonstrated a high-linearity AlGaN/GaNFinFET
by developing new fin formation sequences.
[10]
With regard
to microwave applications, a direct comparison between these
FinFETs is imperative in order not only to get a more insight
into various properties of GaNFinFETs but also to determine
the optimal fin configuration with the best linearity behavior.
But these efforts are not available at the moment.
In this work, we investigate comparatively two varied Al-
GaN/GaN fin architectures fabricated in different processes.
One FinFET features long fins extending beyond gate foot-
print, whereas the other one has fins fully covered by gate elec-
trode. The latter FinFET is found to exhibit an enhanced direct
current (DC), power and linearity performance. The possible
origin of G
m
nonlinearity behavior is also analyzed.
2. Experimental details
The epitaxial structure consists of Al
0.3
Ga
0.7
N
(11 nm)/AlN (1 nm) barrier layer, a 20-nm GaN chan-
nel, and 1.0-µm Al
0.4
Ga
0.96
N buffer layer. A sheet carrier
density of 1.82 × 10
13
cm
−2
and an electron mobility of
1627 cm
2
/V·s were obtained by Hall measurements. After
alloyed Ti/Al/Ni/Au ohmic contacts and Ar
+
implantation
isolation, the samples were passivated with 60-nm Si
3
N
4
de-
posited by plasma-enhanced chemical vapor deposition. For
both kinds of FinFETs, firstly, 600-nm-long nanowire patterns
of resist mask were defined in the middle of drain/source elec-
trodes by electron beam lithography (EBL). The SF
6
-based
plasma etching was then employed to transfer the mask to
Si
3
N
4
passivation layer.
For the first structure, denoted as FinFET1, a low-damage
BCl
3
/Cl
2
plasma dry etching was subsequently performed, re-
sulting in a 600-nm-long Si
3
N
4
/AlGaN/GaN fin. The Al-
∗
Project supported by the National Natural Science Foundation of China (Grant Nos. 61504125, 61474101, and 61505181).
†
Corresponding author. E-mail: haigui.34@163.com
© 2018 Chinese Physical Society and IOP Publishing Ltd http://iopscience.iop.org/cpb http://cpb.iphy.ac.cn
047307-1
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