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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
S9013LT1 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
P
CM
: 0.3 W（Tamb=25℃）
Collector current
I
CM
: 0.5 A
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless
otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
(BR)CBO
Ic= 100μA， I
E
=0
40 V
Collector-emitter breakdown voltage V
(BR)CEO
Ic= 0.1mA， I
B
=0 25 V
Emitter-base breakdown voltage V
(BR)EBO
I
E
=100μA， I
C
=0
5 V
Collector cut-off current I
CBO
V
CB
=40 V , I
E
=0 0.1
μA
Collector cut-off current I
CEO
V
CE
=20V , I
B
=0 0.1
μA
Emitter cut-off current I
EBO
V
EB
= 5V , I
C
=0 0.1
μA
H
FE(1)
V
CE
=1V, I
C
= 50mA 120 350
DC current gain
H
FE(2)
V
CE
=1V, I
C
=500mA 40
Collector-emitter saturation voltage V
CE
(sat) I
C
=500 mA, I
B
= 50mA 0.6 V
Base-emitter saturation voltage V
BE
(sat) I
C
=500 mA, I
B
= 50mA 1.2 V
Transition frequency
f
T
V
CE
=6V, I
C
= 20mA
f=30MHz
150 MHz
CLASSIFICATION OF h
FE(1)
Ｒａｎｋ Ｌ Ｈ
Ｒａｎｇｅ １２０－２００ ２００－３５０
DEVICE MARKING: S9013LT1=J3
Unit : mm
SOT—23
1. BASE
2. EMITTER
3. COLLECTOR
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