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首页MT40A2G4 MT40A1G8 MT40A512M16 DDR4 SDRAM 数据手册.pdf
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DDR4 SDRAM
MT40A2G4
MT40A1G8
MT40A512M16
Features
•V
DD
= V
DDQ
= 1.2V ±60mV
•V
PP
= 2.5V, –125mV, +250mV
• On-die, internal, adjustable V
REFDQ
generation
• 1.2V pseudo open-drain I/O
• Refresh time of 8192-cycle at T
C
temperature range:
– 64ms at -40°C to 85°C
– 32ms at >85°C to 95°C
– 16ms at >95°C to 105°C
• 16 internal banks (x4, x8): 4 groups of 4 banks each
• 8 internal banks (x16): 2 groups of 4 banks each
•8n-bit prefetch architecture
• Programmable data strobe preambles
• Data strobe preamble training
• Command/Address latency (CAL)
• Multipurpose register READ and WRITE capability
• Write leveling
• Self refresh mode
• Low-power auto self refresh (LPASR)
• Temperature controlled refresh (TCR)
• Fine granularity refresh
• Self refresh abort
• Maximum power saving
• Output driver calibration
• Nominal, park, and dynamic on-die termination
(ODT)
• Data bus inversion (DBI) for data bus
• Command/Address (CA) parity
• Databus write cyclic redundancy check (CRC)
• Per-DRAM addressability
• Connectivity test
• JEDEC JESD-79-4 compliant
• sPPR and hPPR capability
Options
1
Marking
• Configuration
– 2 Gig x 4 2G4
– 1 Gig x 8 1G8
– 512 Meg x 16 512M16
• 78-ball FBGA package (Pb-free) – x4,
x8
– 9mm x 13.2mm – Rev. A PM
– 8mm x 12mm – Rev. B, D, G WE
– 7.5mm x 11mm – Rev. E, H, J SA
• 96-ball FBGA package (Pb-free) – x16
– 9mm x 14mm – Rev. A HA
– 8mm x 14mm – Rev. B JY
– 7.5mm x 13.5mm – Rev. D, E, H LY
– 7.5mm x 13mm – Rev. J TB
• Timing – cycle time
– 0.625ns @ CL = 22 (DDR4-3200) -062E
– 0.682ns @ CL = 21 (DDR4-2933) -068
– 0.750ns @ CL = 19 (DDR4-2666) -075
– 0.750ns @ CL = 18 (DDR4-2666) -075E
– 0.833ns @ CL = 17 (DDR4-2400) -083
– 0.833ns @ CL = 16 (DDR4-2400) -083E
– 0.937ns @ CL = 15 (DDR4-2133) -093E
– 1.071ns @ CL = 13 (DDR4-1866) -107E
• Operating temperature
– Commercial (0° ื T
C
ื 95°C) None
– Industrial (–40° ื T
C
ื 95°C) IT
– Automotive (–40° ื T
C
ื 105°C) AT
• Revision :A, :B, :D, :E,
:G, :H, :J
Note:
1. Not all options listed can be combined to
define an offered product. Use the part
catalog search on http://www.micron.com
for available offerings.
Table 1: Key Timing Parameters
Speed Grade
1
Data Rate (MT/s) Target CL-nRCD-nRP
t
AA (ns)
t
RCD (ns)
t
RP (ns)
-062Y 3200 22-22-22 13.75 (13.32) 13.75 (13.32) 13.75 (13.32)
-062E 3200 22-22-22 13.75 13.75 13.75
-068 2933 21-21-21 14.32 (13.75) 14.32 (13.75) 14.32 (13.75)
8Gb: x4, x8, x16 DDR4 SDRAM
Features
CCMTD-1725822587-9875
8gb_ddr4_dram.pdf - Rev. P 04/19 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2015 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Table 1: Key Timing Parameters (Continued)
Speed Grade
1
Data Rate (MT/s) Target CL-nRCD-nRP
t
AA (ns)
t
RCD (ns)
t
RP (ns)
-075E 2666 18-18-18 13.50 13.50 13.50
-075 2666 19-19-19 14.25 (13.75) 14.25 (13.75) 14.25 (13.75)
-083E 2400 16-16-16 13.32 13.32 13.32
-083 2400 17-17-17 14.16 (13.75) 14.16 (13.75) 14.16 (13.75)
-093E 2133 15-15-15 14.06 (13.50) 14.06 (13.50) 14.06 (13.50)
-093 2133 16-16-16 15.00 15.00 15.00
-107E 1866 13-13-13 13.92 (13.50) 13.92 (13.50) 13.92 (13.50)
Note:
1. Refer to the Speed Bin Tables for additional details.
Table 2: Addressing
Parameter 2048 Meg x 4 1024 Meg x 8 512 Meg x 16
Number of bank groups 4 4 2
Bank group address BG[1:0] BG[1:0] BG0
Bank count per group 4 4 4
Bank address in bank group BA[1:0] BA[1:0] BA[1:0]
Row addressing 128K (A[16:0]) 64K (A[15:0]) 64K (A[15:0])
Column addressing 1K (A[9:0]) 1K (A[9:0]) 1K (A[9:0])
Page size
1
512B 1KB 2KB
Note:
1. Page size is per bank, calculated as follows:
Page size = 2
COLBITS
× ORG/8, where COLBIT = the number of column address bits and ORG = the number of
DQ bits.
8Gb: x4, x8, x16 DDR4 SDRAM
Features
CCMTD-1725822587-9875
8gb_ddr4_dram.pdf - Rev. P 04/19 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2015 Micron Technology, Inc. All rights reserved.
Figure 1: Order Part Number Example
Example Part Number: MT40A1G8WE-083:D
Configuration
2 Gig x 4 2G8
1 Gig x 8
512 Meg x 16
1G8
512M16
-
Configuration
MT40A
Package Speed
Revision
:
{
Package
Mark
78-ball 9.0mm x 13.2mm FBGA
PM
78-ball 8.0mm x 12.0mm FBGA
WE
78-ball 7.5mm x 11.0mm FBGA
SA
96-ball 9.0mm x 14.0mm FBGA
HA
96-ball 8.0mm x 14.0mm FBGA
JY
96-ball 7.5mm x 13.5mm FBGA
LY
96-ball 7.5mm x 13.0mm FBGA
TB
:A, :B, :D, :G, :E, :H, :J
Die Revision
Speed
Grade
-107E
-093E
t
CK = 1.071ns, CL = 13
t
CK = 0.937ns, CL = 15
-083E
t
CK = 0.833ns, CL = 16
-083
t
CK = 0.833ns, CL = 17
-075E
t
CK = 0.750ns, CL = 18
-075
t
CK = 0.750ns, CL = 19
-068
t
t
CK = 0.682ns, CL = 21
-062E CK = 0.625ns, CL = 22
Cycle Time, CAS Latency
Commercial
Industrial
Automotive
None
IT
AT
Case Temperature Mark
8Gb: x4, x8, x16 DDR4 SDRAM
Features
CCMTD-1725822587-9875
8gb_ddr4_dram.pdf - Rev. P 04/19 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2015 Micron Technology, Inc. All rights reserved.
Contents
Important Notes and Warnings ....................................................................................................................... 19
General Notes and Description ....................................................................................................................... 19
Description ................................................................................................................................................ 19
Industrial Temperature ............................................................................................................................... 20
Automotive Temperature ............................................................................................................................ 20
General Notes ............................................................................................................................................ 20
Definitions of the Device-Pin Signal Level ................................................................................................... 21
Definitions of the Bus Signal Level ............................................................................................................... 21
Functional Block Diagrams ............................................................................................................................. 22
Ball Assignments ............................................................................................................................................ 24
Ball Descriptions ............................................................................................................................................ 26
Package Dimensions ....................................................................................................................................... 29
State Diagram ................................................................................................................................................ 36
Functional Description ................................................................................................................................... 38
RESET and Initialization Procedure ................................................................................................................. 39
Power-Up and Initialization Sequence ......................................................................................................... 39
RESET Initialization with Stable Power Sequence ......................................................................................... 42
Uncontrolled Power-Down Sequence .......................................................................................................... 43
Programming Mode Registers ......................................................................................................................... 44
Mode Register 0 .............................................................................................................................................. 47
Burst Length, Type, and Order ..................................................................................................................... 48
CAS Latency ............................................................................................................................................... 49
Test Mode .................................................................................................................................................. 50
Write Recovery (WR)/READ-to-PRECHARGE ............................................................................................... 50
DLL RESET ................................................................................................................................................. 50
Mode Register 1 .............................................................................................................................................. 51
DLL Enable/DLL Disable ............................................................................................................................ 52
Output Driver Impedance Control ............................................................................................................... 53
ODT R
TT(NOM)
Values .................................................................................................................................. 53
Additive Latency ......................................................................................................................................... 53
Rx CTLE Control ......................................................................................................................................... 53
Write Leveling ............................................................................................................................................ 54
Output Disable ........................................................................................................................................... 54
Termination Data Strobe ............................................................................................................................. 54
Mode Register 2 .............................................................................................................................................. 55
CAS WRITE Latency .................................................................................................................................... 57
Low-Power Auto Self Refresh ....................................................................................................................... 57
Dynamic ODT ............................................................................................................................................ 57
Write Cyclic Redundancy Check Data Bus .................................................................................................... 57
Mode Register 3 .............................................................................................................................................. 58
Multipurpose Register ................................................................................................................................ 59
WRITE Command Latency When CRC/DM is Enabled ................................................................................. 60
Fine Granularity Refresh Mode .................................................................................................................... 60
Temperature Sensor Status ......................................................................................................................... 60
Per-DRAM Addressability ........................................................................................................................... 60
Gear-Down Mode ....................................................................................................................................... 60
Mode Register 4 .............................................................................................................................................. 61
Hard Post Package Repair Mode .................................................................................................................. 62
Soft Post Package Repair Mode .................................................................................................................... 62
WRITE Preamble ........................................................................................................................................ 63
8Gb: x4, x8, x16 DDR4 SDRAM
Features
CCMTD-1725822587-9875
8gb_ddr4_dram.pdf - Rev. P 04/19 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2015 Micron Technology, Inc. All rights reserved.
READ Preamble .......................................................................................................................................... 63
READ Preamble Training ............................................................................................................................ 63
Temperature-Controlled Refresh ................................................................................................................. 63
Command Address Latency ........................................................................................................................ 63
Internal V
REF
Monitor ................................................................................................................................. 63
Maximum Power Savings Mode ................................................................................................................... 64
Mode Register 5 .............................................................................................................................................. 65
Data Bus Inversion ..................................................................................................................................... 66
Data Mask .................................................................................................................................................. 67
CA Parity Persistent Error Mode .................................................................................................................. 67
ODT Input Buffer for Power-Down .............................................................................................................. 67
CA Parity Error Status ................................................................................................................................. 67
CRC Error Status ......................................................................................................................................... 67
CA Parity Latency Mode .............................................................................................................................. 67
Mode Register 6 .............................................................................................................................................. 68
t
CCD_L Programming ................................................................................................................................. 69
V
REFDQ
Calibration Enable .......................................................................................................................... 69
V
REFDQ
Calibration Range ........................................................................................................................... 69
V
REFDQ
Calibration Value ............................................................................................................................ 70
Truth Tables ................................................................................................................................................... 71
NOP Command .............................................................................................................................................. 74
DESELECT Command .................................................................................................................................... 74
DLL-Off Mode ................................................................................................................................................ 74
DLL-On/Off Switching Procedures .................................................................................................................. 76
DLL Switch Sequence from DLL-On to DLL-Off ........................................................................................... 76
DLL-Off to DLL-On Procedure .................................................................................................................... 78
Input Clock Frequency Change ....................................................................................................................... 79
Write Leveling ................................................................................................................................................ 80
DRAM Setting for Write Leveling and DRAM TERMINATION Function in that Mode ..................................... 81
Procedure Description ................................................................................................................................ 82
Write Leveling Mode Exit ............................................................................................................................ 83
Command Address Latency ............................................................................................................................ 85
Low-Power Auto Self Refresh Mode ................................................................................................................. 90
Manual Self Refresh Mode .......................................................................................................................... 90
Multipurpose Register .................................................................................................................................... 92
MPR Reads ................................................................................................................................................. 93
MPR Readout Format ................................................................................................................................. 95
MPR Readout Serial Format ........................................................................................................................ 95
MPR Readout Parallel Format ..................................................................................................................... 96
MPR Readout Staggered Format .................................................................................................................. 97
MPR READ Waveforms ............................................................................................................................... 98
MPR Writes ............................................................................................................................................... 100
MPR WRITE Waveforms ............................................................................................................................. 101
MPR REFRESH Waveforms ........................................................................................................................ 102
Gear-Down Mode .......................................................................................................................................... 105
Maximum Power-Saving Mode ....................................................................................................................... 108
Maximum Power-Saving Mode Entry .......................................................................................................... 108
Maximum Power-Saving Mode Entry in PDA .............................................................................................. 109
CKE Transition During Maximum Power-Saving Mode ................................................................................ 109
Maximum Power-Saving Mode Exit ............................................................................................................ 109
Command/Address Parity .............................................................................................................................. 111
Per-DRAM Addressability .............................................................................................................................. 119
8Gb: x4, x8, x16 DDR4 SDRAM
Features
CCMTD-1725822587-9875
8gb_ddr4_dram.pdf - Rev. P 04/19 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2015 Micron Technology, Inc. All rights reserved.
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