CMOS图像传感器AR0143详细资料（适用于汽车）.pdf_ar0143规格书 - CSDN文库

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DN05112/D

May 2018, Rev. 0 www.onsemi.com 1

Design Note – DN05112/D

AR0143 Image Sensor with Power &

Clocking Reference Design

Device

Application

Output

Voltage

Output

Current

Dropout

Voltage

Package

NCV8163 Image Sensor 2.8 V 250 mA 80 mV WLCSP

Other Specifications

• Fully integrated image sensor module with power and clocking solution

• Image sensor performance impervious to system design

• 9.5mmx9.5mm image sensor section

• Automotive AEC−Q100 Qualification

Introduction

Complementary metal-oxide semiconductor (CMOS) imaging sensors are the most commonly

used type of image sensors actually. One of the great advantages of CMOS sensors over charged

coupled devices (CCDs) is the very high level of product integration, such as the possibility to

include the timing logic, image digitalization and processing plus capture control on a miniature

single chip. This reduces system power, cost, and size without much compromise in performance.

On the other side, CMOS imaging sensors are sensitive to noise, which can be electromagnetic

interference (EMI), substrate noise coupling, thermal noise and power supply ripple. First three

effects can be significantly reduced by proper circuit and PCB design. We will focus on power

supply ripple only in this design note.

Voltage ripple present on digital supply rails usually does not cause any significant impact to

image quality, while ripple is inside required and specified limits. On the other side, ripple present

on analog supply rail is directly proportional to image quality and can cause several types of image

distortion, including image noise, banding, etc.

In this design note we want to focus on AR0143 image sensor, which use three voltage supply

rails: 2.8V for analog circuits, 1.8V for digital I/O circuits and 1.2 V for digital core and image

processing. The sensor is used in ON Semiconductor MARS reference design which is described

below.

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