IGBTModules–Technologies,DriverandApplications_IGBTmodules

IGBT

Andreas

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The authors and publisher have meticulously prepared all the illustrations, tables,

equations and text

this book, but absolute perfection cannot be guaranteed. Neither

the

publisher nor the authors shall be liable on any legal grounds whatsoever.

All consequences

the use or practical implementation

the material published

this

work shall affect only the user. The authors and publisher cannot be held responsible for

any such consequences.

Consequently, the authors and publisher accept no responsibility and no liability arising

from the use

illustrations, tables, equations or text

this book, or parts thereof, for

any purpose whatsoever.

The terms used

this book may be trademarks, the use

which may infringe the rights

the proprietor.

Publisher: lnfineon Technologies AG , Munich

ISBN 978-3-00-040134-3

Second Edition, 2012

lnfineon Technologies AG.

The work

itself and all its parts are subject to copyright.

Any use outside the narrow boundaries

the

publisher,

not permitted and

liable to prosecution. This applies especially to

reproduction,

translation, microfilming, digitalisation and any other type

editing, as

well as to storage and processing

electronic systems including publication on the

Internet. It also applies to the extraction

individual illustrations, tables

equations

and the use

excerpts

text.

Printed

Germany

Preface

Since their

development

the 1980s, IGBTs have become established as the standard

component

many different power electronics applications. They cover a performance

range from a few hundred watts to several megawatts.

the course

their

development, different IGBTs have separated out into different packages so that, for

example, there are now IGBTs as discrete components in, for example,

T0-247

packages, IGBT

high-power modules, and complex designs that include both IGBTs

and other electronic components and functions.

The aim

this book

to make the basics specific

IGBTs as they interact with the

application accessible to readers.

many published works, practical details and expert

knowledge are often left out or are not presented

a way that clearly shows how they

relate to the application. This book brings together detailed information about power

electronics

relation to IGBTs, supplemented and complemented by our own

experience

the field.

After explaining the internal structure and the IGBT variants derived from the

prc:;>totype

basic model, we then examine how the package technology

constructed. Then, the

book discusses electrical and thermal matters, getting to grips with gate drives for

IGBTs, including their specific application and parallel connection. This broad coverage

the applications also includes the practicalities

the switching behaviour

IGBTs,

basic circuit arrangements, application examples, and rules

design.

complement

that, we also look at measurement engineering and signal electronics. The conclusion

deals with the requirements

IGBTs and IGBT modules

terms

quality and

reliability.

presenting each chapter, we have tried as far as possible to present information

visually and avoid using more equations than necessary. There are more than 500

figures and tables. However, equations are used if they are the best way to explain

basic principles

are relevant to the everyday use

IGBTs.

hope thereby to have

achieved a good balance between pure theory and practice-oriented application.

We owe a particular debt

thanks to our families and friends , as work on this book -

during our already limited leisure

time-

took several years.

would also like to thank Professor Leo Lorenz, Jost Wendt, Hubert Ludwig and

Martin

Hierholzer, as well as lnfineon Technologies, for their support

making this book

a reality.

Warstein, summer 2010

Andreas Volke

Michael

Hornkamp

Although utmost care has been taken to ensure accuracy

presentation and content,

work can claim

be error-free and complete. Therefore, suggestions for

improvement are

cordially welcomed.

Preface

The arrival and consistent development

MOS-controlled power semiconductor

components has helped the entire field

power electronics towards a breakthrough

regarding high power density and system efficiency. It has also improved reliability and

made economical technical solutions possible. The key technology, facilitating the wide

power range

a few tens

watts up

the region

many megawatts, has been the

IGBT (insulated gate bipolar transistor), the exceptional technical properties

which

mean that it has replaced all previous fully controllable power semiconductor

components

existing systems and opened

completely new fields

application.

However, a fundamental understanding

component technology, the requirements

the fields

application and operation, and tried and tested designs for the drive and

protection functions, are essential for fail-safe and reliable operation across the entire

power range, and

order to take the optimisation of system costs into account.

An analysis

the literature currently available reveals a large number

highly qualified

papers and books

the topic

power electronics converters, switching topologies and

systems, and several comprehensive works that present the semiconductor physics and

cellular structures

the major new power semiconductor components both

theory

and from the technological and realisation point

view.

What makes this book unique

that

tailor-made to fill the gap that still existed

between semiconductor physics and power electronics systems technology, and

provides valuable support to users

these components.

Given the work done

this area over the last twenty years, the two authors, who were

involved

applying and spreading this new technology, deserve special commendation:

They did not balk at the effort

putting all the knowledge gathered so far

readable

form. By fortunate coincidence, both authors have been involved

developing

innovative application guidelines for the whole spectrum

power

JGBTs

and are

familiar with - indeed helped to shape - major drive and protection designs,

measurement methods for high performance

JGBTs

and many applications.

This book will provide students

power electronics with valuable information about the

main contemporary power semiconductor components and their application while

development engineers targeting power electronic converters will find all the essentials

selecting, dimensioning and applying IGBT modules laid out clearly and

comprehensively.

I would like

thank the authors for their hard work and express my hope that this book

will become a new milestone and a standard work

the development

energy

electronics.

Munich, summer

2010

Professor Leo Lorenz

IEEE Fellow

Member

the Academy

Science

Contents

1 Power semiconductors ........................................................................................ .. 1

1.1

Introduction ..............

..................

........

...

.............

................................

...

1.1.1

Intrinsic charge carrier concentration .............

............. ..

...

............... ....... 2

1.1.2 Doping ........ .

...

.........

..................... ......

....

...........

.. ..

.................. 6

1.1.3

Charge carrier movement

the semiconductor .....................................

...

1.1.4

Charge carrier generation and recombination .... ....... ..

........................

~~~~~~~~~

:::::

::::::

::::

:::

:::::

::::

::::::::

:::::

:::

::::

:::

7 Manufacturing process .... .

.. ..

.................. ....................... ..... .

.......

.... .... . 18

1.2 Diodes ....

...

..............

...

.............................................................

.... 23

1.2.1 Fast

covery diodes .......

.. ..

...

........

.....

...

........

.. ..

........

...

............ 24

1.2.2 Mains (rectifier) diodes .... ...

...

.....

.. .. ..

.. ..

...

.......

...

.. ..

.............. ....... .

...

1.2

Schottky diodes .... .

...

....

...

....

...

......

...

.....

...

.... .

1.2.4 Z-diodes and avalanche diodes .............

...

....

...

.. ..

...... ................... ...... 28

1.3 Thyristors ..... .

....

............. ......

............

....

...

.........

...

..........

...

. :

1.4 Bipolar junction and field effect transistors

...

.....

....

.....

...

....

.......

.... 31

1.4.1 Bipolar junction transistors (BJTs)

...

.. ..

..........

....

...

1.4.2 Field effect transistors (FETs) .......

.. .. .. .. ..

.. ..

.........

...

...................

1.4.2.1 Junction field effect transistors (JFETs) ...

..... ......

...

.......

...

.... .

.. ..

1.4.2.2 Metal oxide semiconductor field effect transistors

(MOSFETs)

...

... 35

1.4.2.3 Superjunction MOSFETs .

.. ..

...

.....................

.......

..........

.....

.. ..

...

1.5

Insulated gate bipolar transistors (IGBTs) ...... ........................ ..... ..........

...

... 39

1.5.1 Punch through (PT)

JGBTs

.....

.. ..

...

.... .............

............

...

............. 46

1.5.2 Non-punch through (NPT)

IGBTs

......................

..... .

...

.. ..

...........

...

1.5.3 Fieldstop

(FS) IGBTs ...................... .

........

......................

............ ........ 49

1.5.4 Trench

IGBTs ....

..... .

...

...... .......

...

..........................................

...

......... 50

1.5.5 CSTBT

...

.......

...

.......

...

.. ..

.....

...........

...

....

..... 52

1.5.6 IEGTs

...

......

...............................................................

...

...... ......

.. 53

1.5.7 Trench-FS

IGBTs ..... ..

...

.. ..

.....

...

.. .. ..

...

.. ..

........

.. ..

......

....

...

.. ..

1.5.8

IGBTs .....

.... .....

...............

...

.........

................

......

1.5.9

Integrated additional functions ............

.................... .... .... .................... .

Outlook .... .

...

........

.............. .......... .... ......... .

..... ..... .

...........

...

..... .

....

...

.. ..

. 58

1. 7 Manufacturers .......

...

..... ....... .

...

........ .

....

...

......................

...

....... ..

References

...

.......... ....................... .......... ........... ...

.. ..

... ...

..........

......

........

...

2 Construction

IGBT components ..................................................................... 66

1 Introduction

...

....... ...

....

...

...... ........ ......................

......

...

.. ..

....... .

2.2 Materials for the construction

IGBT modules

...

...... ..

....

...

...........

.....

2.2. 1 Plastic frame ..... .

...

..... ..... ......

.......

........

...

.....

...

........... 68

2.2.2 Substrates

....................

...

.. ..

...

.......... ..

..... ......... ......

........

2.2.3 Baseplate ...... ....

.. .. ..

........

.. .. ..

...

.... ...

...

.........

....

...

.....

....

......

....

2.2

Moulding compound, epoxy resin and silicone gels

...

..... .

.. ..

2.3 Electrical bonding technology .

......... .....

........................................ ........ .

2.3.1 Internal connection technology

...

......... .................

...

..... ......

.. ..

7 4

;

:;:

~~~e:~~~r~~~i-~·9·:

::::::::

: :

:::::::::

:::::

::::

:::::::

:::

::::

:::::

;;

2.3.1

Ultrasonic bonding .........

...........

...

.....

......

...

......

...

. 75

2.3.1

rin

g .....................

.. ..

...

.........

....

.. .. ..

...

.......

... ...

2.3.1.5 Ultraso

c welding .............

...

.........................

...

........

.. ..

........ 79

2.3.1.6 Low tem

rature joining .....

...

......

...

...............

...

..... ..... 82

2.3.1.7 Di

usion solder

.. ..

................ .

...

.......

...

.......

......

...

.... ...

.. 82

Contents

2.3.2

External bonding technology

.........

.......

.....................

.. ..

.....

.. .. ..

4.1

Introduction ........ .....

........... .....

...

.... .....

....

.. ..

.........

.. ..

...

.....

.......

.. ..

.......

161

2.3.2.1 The fritting effect

.. ..

.....

.. ..

.....

.. .. ..

....

.. ..

.. .. ..

.. .. .. ..

.......

.. .. .. ..

.... ....

.... 83

4.1.1 Definitions ......

....

...

.......

...

.... .

...

....

................

.. .. ..

.... ....

......

161

2.3.2.2 Screw connection ....

........................................... ........................

. 84

2.3.2.3

Solder connection

.. ..

....

...........

..............................

.... .............. 86

4.1.

1.1

Temperatures .................................................................................

161

4.1.1.2 Power ........................

.. .. ..

....................

........

...

.. ..

......................

161

2.3.2.4 Plug connections

...............

........

.............. ..... ...........

....

...

......

2.3.2.5 Press-in

technology .....

............

...

.......

.........

.. ..

....

...

....

.. .. .. ..

..... 88

4.1.1 .3

Thermal resistances and impedances .... .......

.. .. .. .. ..

.. ..

................ . 162

4.1.2

Thermal conduction

.. ..

....

................

........

.. ..

........

....

......

....

. 163

2.3.2.6 Spring contact

.........................

.. .. ..

......... ......

.. ..

..........

...

.... .........

4.1.2.1 Thermal resistance ................................

.. ..

.......... ....

..................... 163

2.4 Design concepts ......

...

..................

...

....

.. ..

...

...........

.............

.... .........

2.4.1 Standard IGBT modules ........................

.... ....... ......................................

2.4.2 Press pack IGBTs ....

..............

..................

.. ..

..................

......

........ 94

2.4.3

Intelligent power modules (IPMs)

.. .. .. ..

......

.... ..........

.. .. .. ..

.......... ...... . 95

4.1.2.2

Thermal capacity ................

.... ....

.. ..

...............

..........................

...

164

4.1.2.3

Thermal impedance ..............

.. .. ..

.... ................

...

.. ..

........

.. .. ..

..... 166

4.1.2.4

Thermal lateral spread ..................

..............

....

.. .. ..

.. ..

................ 167

4.1.3

Thermal radiation .... .......... ......

....

..................... ............

...

.......

...

....... 169

2.4.4

IGBT moulded modules .....

..................... .... ...

.... .

...

.. .. .. ..

...

.......

.. .. ..

.... 97

4.1.4 Convection ................................ .........

.. .. .. ..

..............

..... .........

...

.. ..

.... 172

2.4.5 Discrete

IGBTs ..................

..............

.. ..

...

......................... ....

..... ..........

2.4.6 Stacks

...

......

.. ..

...................

.. ..

....... ...... ...

.. ..

........

.. ..

...

.......... .....

.... ..... . 99

2.5

Internal parallel connection

semiconductors

...................

.. ..

....

......

.. ..

... 1 00

2.6 Low inductance design ....................

.............................................

............. 1

4.2 Materials and their thermal properties ....

...

..............

...

.. .. ..

.... .............

.. ..

...... 173

4.2.1

Thermal Interface Material (TIM) ....

.. ..

......

.. ..

........... ....

.. ..

............... 176

4.3

Thermal model .....................................................................................

...

. 178

4.4 Heatsink ...... ..

.................................

.....

..........

........................

.. ..

...

.. ..

. 185

2. 7 Circuit

topologies

IGBT modules

.. ..

..........

...

.. ..

....................

...

....

.. ..

....... 1 04

4.4.1 Air coolers

.. ..

....

...

...........

.... .

...........

........................................

.. ..

...... 186

2.8

Insulation coordination

.. ..

............................

...

.......... .

................ .......

....

.. ..

. 107

2.8.1 Clearance and creepage distances

.. ..

.......

.... ....

......

........

............. 108

4.4.2 Liquid cooling system

.... ............

.. ..

............

.. ..

.... ......

.............. 187

4.5 References

...........

...... .... .....

...

...... .... ..... ............ ........ ...... ................

...

...... 190

2.8.2 Insulation voltage .....................................................

......

................

111

2.8.3 Partial discharge ......

...................

.. ..

...............

...................

............. 112

5 Module datasheet ......

.......................

..............................................................

191

2.9 Overview

manufactures ......

...

......

.. ..

.... ..... ................... ............... ........

...

113

2.10 References ......

...

.........

...

.......

.. ..

..... .

.. ..

.....

...

..... ................... 115

5.1

Introduction ..........

.. ..

...

......................

...

.... .... .... .

.. ..

.... ......... ..... ......

...

191

5.2 IGBT

...

.... ...

.. .. ..

.................

.. ..

..........

...

......

.........

...

.........

.. ..

...

. 192

3 Electrical properties ........................................................................................... 117

3.1 Introduction

...

................................. .

.. .. ..

........

...

.. .. .. .. ..

......

.... ..... .........

...

..... 117

3.1.1 Definition

terms .....

.. ..

......................

................

....................

......... 118

3.1

Voltages

......

............

........

....

.. ..

......

.. ..

.........

..........

....

..... 118

5.3

Freewheeling diodes ...... ......

..........

.. ..

....

...

.... .....

..........

...

.. .. ..

.............. 195

5.4 Rectifier diodes

(PIM/CIB modules) ..............

...

....

............ ................... 196

5.5 Brake chopper

(PIM/CIB modules)

.. ..

....

................

............. ..................

197

5.6 NTC resistor

(optional) ........................

............

........................................ 197

5.7

Module ........

...

.............

... ...

.. ..

...

.... .... .

... ...

........ ..................................

...

....... 198

3.1.1.2 Currents ..................

.. ..

............

.. ..

........................................... 119

3.1.1.3 Times

.. .. ..

......

.. ..

...........

..........

.. .. .. ..

.. ..

...

.......

.......................

. 119

3.1

.1.4 Temperatures

............

.. ..

......

..........

................

....

...

.... .... .........

121

3.1

.1.5 Energies ..................

....

.. ..

....

...............................

....

. 122

;

g:~;~~~~~i~gi~~

· :

: :

:: :: ::

::::::::::::::

:::

: :

:::: ::::

::::

:::

::::::

:: ::

: : : : :

::::

: :

::::

~~~

5.10 Package (case) drawing ...........

........................ ......

.. .. ..

.. ..

..............

....

. 200

References ...............

.. ..

...

......................

..................................................

201

3.1.1.6 Modulation factor ..................

.... ....

..................

................

......... 125

3.2 Forward characteristics

the diode

.. ..

...............

.....................

......

.. .. ..

.... 127

6 IGBT Driver ........................................................................................

............... 202

3.3 Diode switching characteristics

.. ..

......

.. ..

....................

.. ..

..............

......... 130

3.3.1 Diode turn-on

.......................... ..........

.. ..

..................

....................

...

130

3.3.2 Diode turn-off

....

.... ....

....

......

...

....

........

.. .. ..

....

.... ......

.. ..

132

3.4

IGBT forward characteristics .............. ...... ...... ...... .......

.. ..

............

......

.. .. ..

.... 137

3.4.1 Forward characteristics at

low temperatures ....

.. ..

.......................

......... 139

3.5

IGBT switching characteristics

......

.... ....

..............................

........

.... 140

3.5.1 IGBT turn-on ......

....................................

....

.......................

........

. 140

3.5.2 IGBT turn-off ..................................................

......

.... ...... .................. 143

3.5.3 Gate charge and

Miller effect

....

.. .. .. ..

............ ......

....

..............

.... ..... 145

3.5.4 Turn-off behaviour NPT versus Trench

IGBT switching characteristics .147

3.6 Short circuit behaviour ............................................................

..................

...

148

3. 7

Blocking behaviour ......

..... .

...

......

...

.... ........ ..

...

............................

151

3.8 Static and dynamic avalanche breakdown ....

.. ..

.... ..........

.. ..

........

.. .. ....

....

.. ..

152

3.9 Stray inductance .....

....

........... .

...

....

...

................ ....

......

....... ..... 155

3.10 Different manufacturing sources ....

.. ..

..........

..............................

......

.. ..

158

References .................. ...................................

...

.. .. ..

...

...... .

.. ..

6.1

Introduction ...............

...

........

..........

.....

.. ..

...

....... ...... .............

.. ..

...... . 202

6.2 Signal transmission

...

......

.. .. .. ..

.. ..

............

...

.. ..

........... ....

........................ 203

6.2.1 Level shifter ................... ...............

.. ..

.... ..........

.. ..

...........

................ 204

6.2.2 Optocouplers ...... ......

.......

...

.....

......................

....................... 208

6.2.3 Pulse transformers .................................. ....

...

...........

...

.......

...

............ 210

6.2.4 Capacitive couplers

.... ................

............

.. ..

....... 213

~i~~~~~c_s_

:::::::::

:::::::

::: ::: :::

:::

: :

::::::

:::::

::::

:: ::

: :

:::::

:: ::

:::

~~ci

6.3 IGBT gate drives ........

..........................

....................

....

...

....

............

217

6.3.1

Voltage source drivers .................... ..........

........

...

.... .... ..........

....

...... 218

6.3.1.1 H-bridge circuit

.. ..

............

.. ..

................

.. .. ..

........

......................... 218

6.3.1.2 Emitter

follower

the gate path

.. ..

..............

......

.. ..

....................... 219

6.3.1.3 Emitter

follower

the emitter path .... ............... ......

..........

.. ..

....

221

6.3.1.4 MOSFET push-pull gate drives

............ ..................

.. .. ..

.... ....

222

6.3.1.5

MOSFET source followers

.. ..

............ .........

....

.. .. .. ..

................ . 224

1.6 n-channel push-pull drives ............

....

......

............. ................... 225

4 Thermal principles

...

....

.. .. ..

...............................................................

.......

161

1.7 IGBT gate boosting

.. ..

......

.......................................................

.. ..

226

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