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更新于2023-03-16
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SPI(x1/x2/x4) NAND Flash GD5F1GQ4UAYIG
1
SPI (Serial Peripheral Interface) NAND Flash Memory
FEATURE
◆ 1G-bit Serial NAND Flash ◆ Program/Erase/Read Speed
-128M-byte -Page Program time: 400us typical
-2048 bytes page for read and program, spare 64bytes -Block Erase time: 3ms typical
-(128K + 4K)bytes per block for erase
-Page read time: 120us maximum(w/I ECC)
◆ Standard, Dual, Quad SPI ◆ Low Power Consumption
-Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD# -40mA maximum active current
-Dual SPI: SCLK, CS#, SIO0, SIO1, WP#, HOLD# -70uA maximum standby current
-Quad SPI: SCLK, CS#, SIO0, SIO1, SIO2, SIO3
◆ High Speed Clock Frequency ◆ Enhanced access performance
-108MHz for fast read with 30PF load -2kbyte cache for fast random read
-Quad I/O Data transfer up to 480Mbits/s -Cache read and cache program
-2112/2048/64/16 wrap read option
◆ Software/Hardware Write Protection ◆ Advanced Feature for NAND
-Write protect all/portion of memory via software -Internal ECC option, per 512bytes
-Enable/Disable protection with WP# Pin -Internal data move by page with ECC
-Top or Bottom, Block selection combination -Promised golden block0
◆ Advanced security Features
-8K-Byte OTP Region
◆ Single Power Supply Voltage
-Full voltage range:2.7~3.6V
Note: please contact GigaDevice for details
GD Confidential
Preliminary
SPI(x1/x2/x4) NAND Flash GD5F1GQ4UAYIG
2
GENERAL DESCRIPTION
SPI (Serial Peripheral Interface) NAND Flash provides an ultra cost-effective while high density non-volatile memory
storage solution for embedded systems, based on an industry-standard NAND Flash memory core. It is an attractive
alternative to SPI-NOR and standard parallel NAND Flash, with advanced features:
• Total pin count is 8, including VCC and GND
• Density range from 256Mbit to 8Gbit
• Superior write performance and cost per bit over SPI-NOR
• Significant low cost than parallel NAND
This low-pin-count NAND Flash memory follows the industry-standard serial peripheral interface, and always
remains the same pinout from one density to another. The command sets resemble common SPI-NOR command sets,
modified to handle NAND specific functions and added new features. GigaDevice SPI NAND is an easy-to-integrate
NAND Flash memory, with specified designed features to ease host management:
• User-selectable internal ECC. ECC code is generated internally during a page program operation. When a page is
read to the cache register, the ECC code is detect and correct the errors when necessary. The 64-bytes spare area is
available even when internal ECC enabled. The device outputs corrected data and returns an ECC error status.
• Assistant Block Management. With corresponding options set, the device can prohibit the Bad Block from being
erased. This option features favor the block management convenience and enhance the performance.
• Internal data move or copy back with internal ECC. The device can be easily refreshed and manage garbage
collection task, without need of shift in and out of data.
• Power on Read with internal ECC. The device will automatically read first page of fist block to cache after power
on, then host can directly read data from cache for easy boot. Also the data is promised correctly by internal ECC.
It is programmed and read in page-based operations, and erased in block-based operations. Data is transferred to or
from the NAND Flash memory array, page by page, to a data register and a cache register. The cache register is closest to
I/O control circuits and acts as a data buffer for the I/O data; the data register is closest to the memory array and acts as a
data buffer for the NAND Flash memory array operation. The cache register functions as the buffer memory to enable
page and random data READ/WRITE and copy back operations. These devices also use a SPI status register that reports
the status of device operation.
CONNECTION DIAGRAM
CS#
SO
WP#
VSS
Top View
VCC
HOLD#
SCLK
SI
8–LEAD WSON
1
2
3
4 5
6
7
8
GD Confidential
Preliminary
SPI(x1/x2/x4) NAND Flash GD5F1GQ4UAYIG
3
PIN DESCRIPTION
Pin Name I/O Description
CS# I
Chip Select input, active low
SO/SIO1 I/O
Serial Data Output / Serial Data Input Output 1
WP#/SIO2 I/O
Write Protect, active low / Serial Data Input Output 2
VSS Ground
Ground
SI/SIO0 I/O
Serial Data Input / Serial Data Input Output 0
SCLK I
Serial Clock input
HOLD#/SIO3 I/O
Hold input, active low / Serial Data Input Output3
VCC Supply
Power Supply
BLOCK DIAGRAM
Serial NAND controler
Cache
memory
NAND
memory
core
ECC and status register
Vcc
Vss
SCLK SI/SIO0 SO/SIO1 CS#
HOLD#/
SIO3
WP#/
SIO2
ARRAY ORGANIZATION
Each device has Each block has Each page has
128M+4M 128K+4K 2K+64 bytes
1024 x 64 64 - pages
1024 - - blocks
GD Confidential
Preliminary
SPI(x1/x2/x4) NAND Flash GD5F1GQ4UAYIG
4
Figure1. Array Organization
2048
64
2048 64
1 block
1 block = (2K + 64) bytes x 64 pages
= (128K + 4K) bytes
1 page = (2K + 64 bytes)
1 device = (128K + 4K) bytes x 1024 blocks
= 1Gb
Cache Register
Data Register
1024 Blocks
per device
SO
SI
MEMORY MAPPING
0
1
2
1023
0
1
63
0
1
2
2111
Blocks
RA<15:6>
Pages
RA<5:0>
Bytes
CA<11:0>
Note:
1. CA: Column Address. The 12-bit address is capable of addressing from 0 to 4095 bytes; however, only bytes 0 through
2111 are valid. Bytes 2112 through 4095 of each page are “out of bounds,” do not exist in the device, and cannot be
addressed.
2. RA: Row Address. RA<5:0> selects a page inside a block, and RA<15:6> selects a block.
GD Confidential
Preliminary
SPI(x1/x2/x4) NAND Flash GD5F1GQ4UAYIG
5
DEVICE OPERATION
SPI Modes
SPI NAND supports two SPI modes:
• CPOL = 0, CPHA = 0 (Mode 0)
• CPOL = 1, CPHA = 1 (Mode 3)
Input data is latched on the rising edge of SCLK and data shifts out on the falling edge of SCLK for both modes. All
timing diagrams shown in this data sheet are mode 0. See figure2 for more details.
Figure2. SPI Modes Sequence Diagram
CS#
SCLK
SCLK
SI
SO
CPOL CPHA
00
11
MSB LSB
MSB LSB
Note: While CS# is HIGH, keep SCLK at VCC or GND (determined by mode 0 or mode 3). Do not toggle SCLK until CS# is driven
LOW.
Standard SPI
SPI NAND Flash features a standard serial peripheral interface on 4 signals bus: Serial Clock (SCLK), Chip Select
(CS#), Serial Data Input (SI) and Serial Data Output (SO).
Dual SPI
SPI NAND Flash supports Dual SPI operation when using the x2 and dual IO commands. These commands allow
data to be transferred to or from the device at two times the rate of the standard SPI. When using the Dual SPI command
the SI and SO pins become bidirectional I/O pins: SIO0 and SIO1.
Quad SPI
SPI NAND Flash supports Quad SPI operation when using the x4 and Quad IO commands. These commands allow
data to be transferred to or from the device at four times the rate of the standard SPI. When using the Quad SPI command
the SI and SO pins become bidirectional I/O pins: SIO0 and SIO1, and WP# and HOLD# pins become SIO2 and SIO3.
HOLD Mode
The HOLD# signal goes low to stop any serial communications with the device, but doesn’t stop the operation of
write status register, programming, or erasing in progress.
The operation of HOLD, need CS# keep low, and starts on falling edge of the HOLD# signal, with SCLK signal being
low (if SCLK is not being low, HOLD operation will not start until SCLK being low). The HOLD condition ends on rising
edge of HOLD# signal with SCLK being low (If SCLK is not being low, HOLD operation will not end until SCLK being low).
The SO is high impedance, both SI and SCLK don’t care during the HOLD operation, if CS# drives high during
HOLD operation, it will reset the internal logic of the device. To re-start communication with chip, the HOLD# must be at
high and then CS# must be at low.
GD Confidential
Preliminary
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