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KMR8X0001M-B608规格书
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KMR8X0001M-B608
Rev. 0.0, Sep. 2013
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
2013 Samsung Electronics Co., Ltd. All rights reserved.
Preliminary
MCP Specification
16GB e.MMC
+ 16Gb QDP LPDDR3 SDRAM
datasheet
EMMC
- 2 -
KMR8X0001M- B608 MCP Memory
Preliminary Rev. 0.0
datasheet
Revision History
Revision No. History Draft Date Remark Editor
0.0 Initial issue.
- 16GB e.MMC B-die_Ver 1.0
- 16Gb QDP LPDDR3 SDRAM D-die_Ver 0.1
6th Sep, 2013 Preliminary J.Y.Bae
- 3 -
KMR8X0001M- B608 MCP Memory
Preliminary Rev. 0.0
datasheet
1. FEATURES
embedded MultiMediaCard Ver. 5.0 compatible. Detail description is refer-
enced by JEDEC Standard
SAMSUNG e·MMC supports features of eMMC5.0 which are defined in
JEDEC Standard
- Supported Features : Packed command, Cache, Discard, Sanitize,
Power Off Notification, Data Tag, Partition types, Context ID, Real Time
Clock, Dynamic Device Capacity, HS200
- Non-supported Features : Large Sector Size (4KB)
Additional features of eMMC5.0 : HS400 mode (200MHz DDR - up to
400Mbps), Field Firmware Update, Device Health Report, Sleep Notifica-
tion, Secure Removal Type
Full backward compatibility with previous MultiMediaCard system specifi-
cation (1bit data bus, multi-e·MMC systems)
Data bus width : 1bit (Default), 4bit and 8bit
MMC I/F Clock Frequency : 0 ~ 200MHz
MMC I/F Boot Frequency : 0 ~ 52MHz
Power : Interface power → VDD(VCCQ) (1.70V ~ 1.95V or 2.7V ~ 3.6V) ,
Memory power → VDDF(VCC) (2.7V ~ 3.6V)
<Common>
Operating Temperature : -25C ~ 85C
Package : 221Ball FBGA Type - 11.5mm x 13mm x 1.2mmt
0.5mm ball pitch
<e.MMC>
<LPDDR3 SDRAM>
• Double-data rate architecture; two data transfers per clock cycle
• Bidirectional data strobes (DQS_t, DQS_c), These are transmitted/
received with data to be used in capturing data at the receiver
• Differential clock inputs (CK_t and CK_c)
• Differential data strobes (DQS_t and DQS_c)
• Commands & addresses entered on both positive and negative CK
edges; data and data mask referenced to both edges of DQS
• 8 internal banks for concurrent operation
• Data mask (DM) for write data
• Burst Length: 8
• Burst Type: Sequential
• Read & Write latency : Refer to Table 45 LPDDR3 AC Timing Table
• Auto Precharge option for each burst access
• Configurable Drive Strength
• All Bank Refresh, Per Bank Refresh and Self Refresh
• Partial Array Self Refresh and Temperature Compensated Self
Refresh
• Write Leveling
• CA Calibration
• HSUL_12 compatible inputs
• VDD1/VDD2/VDDQ/VDDCA
: 1.8V/1.2V/1.2V / 1.2V
• No DLL : CK to DQS is not synchronized
• Edge aligned data output, center aligned data input
• Operating Temperature : -25 ~ 85C
• On Die Termination using ODT pin
• 2/CS, 2CKE
• In case ODT Function is not used, ODT pin should be considerd as
DNU. ODT will be connected to rank 0. The ODT Input to rank 1(if 2nd
rank is present) will be connected to Ground in the package.
NOTE :
1) The least-significant column address C0 is not transmitted on the CA bus, and is
implied to be zero.
2) t
REFI
values for all bank refresh is Tc = -25~85C, Tc means Operating Case Tem-
perature
3) Row and Column Address values on the CA bus that are not used are “don’t care.”
4) No memory present at addresses with R13=R14=HIGH. ACT command with
R13=R14=HIGH is ignored (NOP). Write to R13=R14=HIGH is ignored (NOP).
Items 4Gb
Number of Banks 8
Bank Addresses BA0-BA2
t
REFI
(us)
2)
3.9
x16
Row Addresses R0-R13
Column Addresses
1)
C0-C10
x32
Row Addresses R0-R13
Column Addresses
1)
C0-C9
- 4 -
KMR8X0001M- B608 MCP Memory
Preliminary Rev. 0.0
datasheet
2. GENERAL DESCRIPTION
The KMR8X0001M is a Multi Chip Package Memory which combines 16GB e.MMC and 16Gb QDP LPDDR3 SDRAM.
SAMSUNG e·MMC is an embedded MMC solution designed in a BGA package form. e·MMC operation is identical to a MMC device and therefore is a
simple read and write to memory using MMC protocol v5.0 which is a industry standard.
e·MMC consists of NAND flash and a MMC controller. 3V supply voltage is required for the NAND area (VDDF or VCC) whereas 1.8V or 3V dual supply
voltage (VDD or VCCQ) is supported for the MMC controller. SAMSUNG e.MMC supports 200MHz DDR – up to 400MBps with bus widths of 8 bit in order
to improve sequential bandwidth, especially sequential read performance.
There are several advantages of using e·MMC. It is easy to use as the MMC interface allows easy integration with any microprocessor with MMC host.
Any revision or amendment of NAND is invisible to the host as the embedded MMC controller insulates NAND technology from the host. This leads to
faster product development as well as faster times to market.
The embedded flash management software or FTL(Flash Transition Layer) of e·MMC manages Wear Leveling, Bad Block Management and ECC. The
FTL supports all features of the Samsung NAND flash and achieves optimal performance.
LPDDR3-SDRAM is a high-speed synchronous DRAM device internally configured as an 8-Bank memory.
This device contains the following number of bits: 4Gb has 4,294,967,296 bits
LPDDR3 devices use a double data rate architecture on the Command/Address (CA) bus to reduce the number of input pins in the system. The 10-bit CA
bus contains command, address, and bank information. Each command uses one clock cycle, during which command information is transferred on both
the positive and negative edge of the clock.
These devices also use a double data rate architecture on the DQ pins to achieve high speed operation. The double data rate architecture is essentially
an 8n prefetch architecture with an interface designed to transfer two data bits per DQ every clock cycle at the I/O pins. A single read or write access for
the LPDDR3 SDRAM effectively consists of a single 8n-bit wide, one clock cycle data transfer at the internal DRAM core and eight corresponding n-bit
wide, one-half-clock-cycle data transfers at the I/O pins.
Read and write accesses to the LPDDR3 SDRAMs are burst oriented; accesses start at a selected location and continue for a programmed number of
locations in a programmed sequence. Accesses begin with the registration of an Activate command, which is then followed by a Read or Write command.
The address and BA bits registered coincident with the Activate command are used to select the row and the Bank to be accessed. The address bits
registered coincident with the Read or Write command are used to select the Bank and the starting column location for the burst access.
Prior to normal operation, the LPDDR3 SDRAM must be initialized. The following section provides detailed information covering device initialization, reg-
ister definition, command description and device operation.
The KMR8X0001M suitable for use in data memory of mobile communication system to reduce not only mount area but also power consumption. This
device is available in 221-ball FBGA Type.
- 5 -
KMR8X0001M- B608 MCP Memory
Preliminary Rev. 0.0
datasheet
3. PIN CONFIGURATION
221 FBGA: Top View (Ball Down)
- 1234567891011121314
A
DNU VSF VSSm VCCQm DAT6m CMDm RCLKm VSSm DAT0m DAT5m VDDlm VSSm VSF DNU
B VSF VSSm VCCm DAT7m DAT3m VCCQm VSSm CLKm VCCQm DAT1m VSSm VCCm VCCm VSF
C
RESETm VSSm VCCm VSSm DAT2m VCCQm VSSm DAT4m VSSm VCCQm VSSm VSSm
D VSF VSF VSF VSF VSF VSSm VCCm
E
F VSSv VDD1v VDD1v VDD2v VDD2v VDD1v DQ29v DQ30v DQ31v VSSQv
G
ZQ0v ZQ1v VSSv VDD1v VSSv VDDQv DQ26v VSSQv DQ27v DQ28v
H CA9v VSSv VSSCAv VSSv VDDQv DQS3v VSSQv DQ24v VDDQv DQ25v
J CA8v CA7v VSSCAv VDD2v VSSQv /DQS3v DM3v VDDQv DQ15v VSSQv
K
VDDCAv CA6v VSSCAv VDD2v VSSQv VSSQv VDDQv DQ13v VDDQv DQ14v
L VDD2v CA5v VSSv VDD2v --VDDQv VDDQv VSSQv DQ12v VSSQv DQ11v -
M
VREF-
CAv
VSSv VSSv VDD2v --VSSQv DQS1v VDDQv DQ10v VDDQv DQ9v -
N VDDCAv /CKv VSSv VDD2v --VSSv /DQS1v DM1v VDDQv DQ8v VSSQv -
P
VSSCAv CKv VSSv VDD2v --VDD2v VSSQv DNU VDD2v VSSv
VREFDQv
-
R CKE1v VSSv VSSv VDD2v --VSSv /DQS0v DM0v VDDQv DQ7v VSSQv -
T CKE0v /CS1v VSSv VDD2v --VSSQv DQS0v VDDQv DQ5v VDDQv DQ6v -
U
VDDCAv /CS0v VSSCAv VDD2v --VDDQv VDDQv VSSQv DQ3v VSSQv DQ4v -
V VDDCAv CA4v VSSCAv VDD2v --VSSQv VSSQv VDDQv DQ1v VDDQv DQ2v -
W CA2v CA3v VSSCAv VDD2v --VSSQv /DQS2v DM2v VDDQv DQ0v VSSQv
Y CA0v CA1v VSSv VSSv --VDDQv DQS2v VSSQv DQ23v VDDQv DQ22v -
AA
DNU VSSv VDD1v VSSv VDD1v VSSv VDDQv DQ21v VSSQv DQ20v DQ19v DNU-
AB DNU DNU VDD1v VDD1v VDD2v VDD2v VDD1v DQ18v DQ17v DQ16v DNU- DNU
LPDDR3
e.MMC
Power
Ground
DNU / VSF
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