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MIL-STD-883H 2010微电子器件测试方法
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更新于2023-03-16
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美国军用微电子器件测试方法标准,其中包括环境测试,极限应力试验方法,鉴定试验等
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MIL-STD-883H
26 February 2010
SUPERSEDING
MIL-STD-883G
28 February 2006
DEPARTMENT OF DEFENSE
TEST METHOD STANDARD
MICROCIRCUITS
AMSC N/A FSC 5962
The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 30 September 2010.
INCH - POUND
MIL-STD-883H
ii
FOREWORD
1. This standard is approved for use by all Departments and Agencies of the Department of Defense.
2. Comment, suggestions, or questions on this document should be addressed to: Commander, Defense Supply Center
Columbus ATTN: DSCC-VA, P.O. Box 3990, Columbus, OH 43218-3990, or by email to STD883@dla.mil
. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at: https://assist.daps.dla.mil
.
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MIL-STD-883H
iii
CONTENTS
PARAGRAPH Page
1. SCOPE ......................................................................................................................................... 1
1.1 Purpose ....................................................................................................................................... 1
1.2 Intended use of or reference to MIL-STD-883 ............................................................................ 1
2. APPLICABLE DOCUMENTS ....................................................................................................... 3
2.1 General ....................................................................................................................................... 3
2.2 Government documents ............................................................................................................. 3
2.3 Non-Government publications .................................................................................................... 4
2.4 Order of precedence ................................................................................................................... 5
3. ABBREVIATIONS, SYMBOLS, AND DEFINITIONS ................................................................... 6
3.1 Abbreviations, symbols, and definitions ..................................................................................... 6
4. GENERAL REQUIREMENTS ...................................................................................................... 8
4.1 Numbering system ...................................................................................................................... 8
4.2 Test results ................................................................................................................................. 9
4.3 Test sample disposition .............................................................................................................. 9
4.4 Orientation .................................................................................................................................. 9
4.5 Test conditions ............................................................................................................................ 12
4.6 General precautions ................................................................................................................... 14
4.7 Recycled, recovered, and environmentally preferable materials 14
5. DETAIL REQUIREMENTS ........................................................................................................... 15
6. NOTES .......................................................................................................................................... 16
FIGURES
FIGURE
1. Orientation of noncylindrical microelectronic devices to
direction of applied force .............................................................................................................. 10
2. Orientation of cylindrical microelectronic device to
direction of applied force .............................................................................................................. 11
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MIL-STD-883H
iv
TEST METHODS
METHOD NO. ENVIRONMENTAL TESTS
1001 Barometric pressure, reduced (altitude operation)
1002 Immersion
1003 Insulation resistance
1004.7 Moisture resistance
1005.9 Steady state life
1006 Intermittent life
1007 Agree life
1008.2 Stabilization bake
1009.8 Salt atmosphere (corrosion)
1010.8 Temperature cycling
1011.9 Thermal shock
1012.1 Thermal characteristics
1013 Dew point
1014.13 Seal
1015.10 Burn-in test
1016.2 Life/reliability characterization tests
1017.2 Neutron irradiation
1018.6 Internal gas analysis
1019.8 Ionizing radiation (total dose) test procedure
1020.1 Dose rate induced latchup test procedure
1021.3 Dose rate upset testing of digital microcircuits
1022 Mosfet threshold voltage
1023.3 Dose rate response of linear microcircuits
1030.2 Preseal burn-in
1031 Thin film corrosion test
1032.1 Package induced soft error test procedure (due to alpha particles)
1033 Endurance life test
1034.1 Die penetrant test (for plastic devices)
MECHANICAL TESTS
2001.3 Constant acceleration
2002.5 Mechanical shock
2003.9 Solderability
2004.6 Lead integrity
2005.2 Vibration fatigue
2006.1 Vibration noise
2007.3 Vibration, variable frequency
2008.1 Visual and mechanical
2009.10 External visual
2010.12 Internal visual (monolithic)
2011.8 Bond strength (destructive bond pull test)
2012.8 Radiography
2013.1 Internal visual inspection for DPA
2014 Internal visual and mechanical
2015.13 Resistance to solvents
2016 Physical dimensions
2017.9 Internal visual (hybrid)
2018.5 Scanning electron microscope (SEM) inspection of metallization
2019.8 Die shear strength
2020.9 Particle impact noise detection test
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MIL-STD-883H
v
TEST METHODS
METHOD NO. MECHANICAL TESTS
2021.3 Glassivation layer integrity
2022.2 Wetting balance solderability
2023.6 Nondestructive bond pull
2024.2 Lid torque for glass-frit-sealed packages
2025.4 Adhesion of lead finish
2026 Random vibration
2027.2 Substrate attach strength
2028.4 Pin grid package destructive lead pull test
2029 Ceramic chip carrier bond strength
2030.1 Ultrasonic inspection of die attach
2031.1 Flip chip pull-off test
2032.2 Visual inspection of passive elements
2035 Ultrasonic inspection of TAB bonds
2036 Resistance to soldering heat
ELECTRICAL TESTS (DIGITAL)
3001.1 Drive source, dynamic
3002.1 Load conditions
3003.1 Delay measurements
3004.1 Transition time measurements
3005.1 Power supply current
3006.1 High level output voltage
3007.1 Low level output voltage
3008.1 Breakdown voltage, input or output
3009.1 Input current, low level
3010.1 Input current, high level
3011.1 Output short circuit current
3012.1 Terminal capacitance
3013.1 Noise margin measurements for digital microelectronic devices
3014 Functional testing
3015.8 Electrostatic discharge sensitivity classification
3016 Activation time verification
3017 Microelectronics package digital signal transmission
3018 Crosstalk measurements for digital microelectronic device packages
3019.1 Ground and power supply impedance measurements for digital microelectronics device packages
3020 High impedance (off-state) low-level output leakage current
3021 High impedance (off-state) high-level output leakage current
3022 Input clamp voltage
3023.1 Static latch-up measurements for digital CMOS microelectronic devices
3024 Simultaneous switching noise measurements for digital microelectronic devices
ELECTRICAL TESTS (LINEAR)
4001.1 Input offset voltage and current and bias current
4002.1 Phase margin and slew rate measurements
4003.1 Common mode input voltage range
Common mode rejection ratio
Supply voltage rejection ratio
4004.2 Open loop performance
4005.1 Output performance
4006.1 Power gain and noise figure
4007 Automatic gain control range
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