High-Speed Single-Port Synchronous
SRAM
sram_sp_hse_8kx8
8192X8, Mux 16, Drive 12
TSMC 0.18um Process (CL018G) SRAM-SP-HS Datasheet, Version r15p0-01eac0
Copyright 1997-2003 Artisan Components, Inc.
Process Technology:
TSMC CL018G
Features
• Precise Optimization for TSMC’s Six-Layer Metal 0.18µm
CL018G CMOS Process
• High Density (area is 0.496mm
2
)
• Fast Access Time (1.51ns at fast@0C process, 1.98V, 0˚C)
• Fast Cycle Time (1.51ns at fast@0C process, 1.98V, 0˚C)
• One Read/Write Port
• Completely Static Operation
• Near-Zero Hold Time (Data, Address, and Control Inputs)
Memory Description
The 8192X8 SRAM is a high-performance, synchronous
single-port, 8192-word by 8-bit memory designed to
take full advantage of TSMC’s six-layer metal, 0.18µm
CL018G CMOS process.
The SRAM’s storage array is composed of six-transistor
cells with fully static memory circuitry. The SRAM operates
at a voltage of 1.8V ±10% and a junction temperature range
of -40˚C to +125˚C.
Pin Description
Area
The footprint area includes the core area and user-
defined power ring and pin spacing areas.
Pin Description
A[12:0] Addresses (A[0] = LSB)
D[7:0] Data Inputs (D[0] = LSB)
CLK Clock Input
CEN Chip Enable
WEN Write Enable
OEN Output Enable
Q[7:0] Data Outputs (Q[0] = LSB)
Area Type Width (mm) Height (mm)
Area (mm
2
)
Core 0.352 1.410 0.496
Footprint 0.386 1.444 0.558
Symbol
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