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DS162 (v3.1.1) January 30, 2015 www.xilinx.com
Product Specification 1
© 2009–2015 Xilinx, Inc. XILINX, the Xilinx logo, Virtex, Zynq, Artix, Kintex, Spartan, ISE, and other designated brands included herein are trademarks of Xilinx in the United
States and other countries. All other trademarks are the property of their respective owners.
Spartan-6 FPGA Electrical Characteristics
Spartan®-6 LX and LXT FPGAs are available in various speed grades, with -3 having the highest performance. The DC and
AC electrical parameters of the Automotive XA Spartan-6 FPGAs and Defense-grade Spartan-6Q FPGAs devices are
equivalent to the commercial specifications except where noted. The timing characteristics of the commercial (XC) -2 speed
grade industrial device are the same as for a -2 speed grade commercial device. The -2Q and -3Q speed grades are
exclusively for the expanded (Q) temperature range. The timing characteristics are equivalent to those shown for the -2 and
-3 speed grades for the Automotive and Defense-grade devices.
Spartan-6 FPGA DC and AC characteristics are specified for commercial (C), industrial (I), and expanded (Q) temperature
ranges. Only selected speed grades and/or devices might be available in the industrial or expanded temperature ranges for
Automotive and Defense-grade devices. References to device names refer to all available variations of that part number (for
example, LX75 could denote XC6SLX75, XA6SLX75, or XQ6SLX75). The Spartan-6 FPGA -3N speed grade designates
devices that do not support MCB functionality.
All supply voltage and junction temperature specifications are representative of worst-case conditions. The parameters
included are common to popular designs and typical applications.
Available device and package combinations can be found at:
• DS160
: Spartan-6 Family Overview
• DS170
: Automotive XA Spartan-6 Family Overview
• DS172
: Defense-Grade Spartan-6Q Family Overview
This Spartan-6 FPGA data sheet, part of an overall set of documentation on the Spartan-6 family of FPGAs, is available on
the Xilinx website at http://www.xilinx.com/support/documentation/spartan-6.htm
.
Spartan-6 FPGA DC Characteristics
89
Spartan-6 FPGA Data Sheet:
DC and Switching Characteristics
DS162 (v3.1.1) January 30, 2015 Product Specification
Table 1: Absolute Maximum Ratings
(1)
Symbol Description Units
V
CCINT
Internal supply voltage relative to GND –0.5 to 1.32 V
V
CCAUX
Auxiliary supply voltage relative to GND –0.5 to 3.75 V
V
CCO
Output drivers supply voltage relative to GND –0.5 to 3.75 V
V
BATT
Key memory battery backup supply (LX75, LX75T, LX100, LX100T, LX150, and LX150T only) –0.5 to 4.05 V
V
FS
External voltage supply for eFUSE programming (LX75, LX75T, LX100, LX100T, LX150, and
LX150T only)
(2)
–0.5 to 3.75 V
V
REF
Input reference voltage –0.5 to 3.75 V

Spartan-6 FPGA Data Sheet: DC and Switching Characteristics
DS162 (v3.1.1) January 30, 2015 www.xilinx.com
Product Specification 2
V
IN
and V
TS
(3)
I/O input voltage or voltage
applied to 3-state output,
relative to GND
(4)
All user and dedicated
I/Os
Commercial
DC –0.60 to 4.10 V
20% overshoot duration –0.75 to 4.25 V
8% overshoot duration
(5)
–0.75 to 4.40 V
Industrial
DC –0.60 to 3.95 V
20% overshoot duration –0.75 to 4.15 V
4% overshoot duration
(5)
–0.75 to 4.40 V
Expanded (Q)
DC –0.60 to 3.95 V
20% overshoot duration –0.75 to 4.15 V
4% overshoot duration
(5)
–0.75 to 4.40 V
Restricted to
maximum of 100 user
I/Os
Commercial
20% overshoot duration –0.75 to 4.35 V
15% overshoot duration
(5)
–0.75 to 4.40 V
10% overshoot duration –0.75 to 4.45 V
Industrial
20% overshoot duration –0.75 to 4.25 V
10% overshoot duration –0.75 to 4.35 V
8% overshoot duration
(5)
–0.75 to 4.40 V
Expanded (Q)
20% overshoot duration –0.75 to 4.25 V
10% overshoot duration –0.75 to 4.35 V
8% overshoot duration
(5)
–0.75 to 4.40 V
T
STG
Storage temperature (ambient) –65 to 150 °C
T
SOL
Maximum soldering temperature
(6)
(TQG144, CPG196, CSG225, CSG324, CSG484, and FTG256)
+260 °C
Maximum soldering temperature
(6)
(Pb-free packages: FGG484, FGG676, and FGG900) +250 °C
Maximum soldering temperature
(6)
(Pb packages: CS484, FT256, FG484, FG676, and FG900) +220 °C
T
j
Maximum junction temperature
(6)
+125 °C
Notes:
1. Stresses beyond those listed under Absolute Maximum Ratings might cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those listed under Operating Conditions is not implied.
Exposure to Absolute Maximum Ratings conditions for extended periods of time might affect device reliability.
2. When programming eFUSE, V
FS
≤ V
CCAUX
. Requires up to 40 mA current. For read mode, V
FS
can be between GND and 3.45 V.
3. I/O absolute maximum limit applied to DC and AC signals. Overshoot duration is the percentage of a data period that the I/O is stressed
beyond 3.45V.
4. For I/O operation, refer to UG381
: Spartan-6 FPGA SelectIO Resources User Guide.
5. Maximum percent overshoot duration to meet 4.40V maximum.
6. T
SOL
is the maximum soldering temperature for component bodies. For soldering guidelines and thermal considerations,
see UG385
: Spartan-6 FPGA Packaging and Pinout Specification.
Table 1: Absolute Maximum Ratings
(1)
(Cont’d)
Symbol Description Units

Spartan-6 FPGA Data Sheet: DC and Switching Characteristics
DS162 (v3.1.1) January 30, 2015 www.xilinx.com
Product Specification 3
Table 2: Recommended Operating Conditions
(1)
Symbol Description Min Typ Max Units
V
CCINT
Internal supply voltage relative to GND
-3, -3N, -2 Standard performance
(2)
1.14 1.2 1.26 V
-3, -2 Extended performance
(2)
1.2 1.23 1.26 V
-1L Standard performance
(2)
0.95 1.0 1.05 V
V
CCAUX
(3)(4)
Auxiliary supply voltage relative to GND
V
CCAUX
=2.5V
(5)
2.375 2.5 2.625 V
V
CCAUX
= 3.3V 3.15 3.3 3.45 V
V
CCO
(6)(7)(8)
Output supply voltage relative to GND 1.1 – 3.45 V
V
IN
Input voltage relative to GND
All I/O
standards
(except PCI)
Commercial temperature (C) –0.5 – 4.0 V
Industrial temperature (I) –0.5 – 3.95 V
Expanded (Q) temperature –0.5 – 3.95 V
PCI I/O standard
(9)
–0.5 – V
CCO
+0.5 V
I
IN
(10)
Maximum current through pin using PCI I/O standard
when forward biasing the clamp diode.
(9)
Commercial (C) and
Industrial temperature (I)
–– 10mA
Expanded (Q) temperature – – 7 mA
Maximum current through pin when forward biasing the ground clamp diode. – – 10 mA
V
BATT
(11)
Battery voltage relative to GND, T
j
=0°C to +85°C
(LX75, LX75T, LX100, LX100T, LX150, and LX150T only)
1.0 – 3.6 V
T
j
Junction temperature operating range
Commercial (C) range 0 – 85 °C
Industrial temperature (I) range –40 – 100 °C
Expanded (Q) temperature range –40 – 125 °C
Notes:
1. All voltages are relative to ground.
2. See Interface Performances for Memory Interfaces in Ta bl e 25. The extended performance range is specified for designs not using the
standard V
CCINT
voltage range. The standard V
CCINT
voltage range is used for:
• Designs that do not use an MCB
• LX4 devices
• Devices in the TQG144 or CPG196 packages
• Devices with the -3N speed grade
3. Recommended maximum voltage droop for V
CCAUX
is 10 mV/ms.
4. During configuration, if V
CCO_2
is 1.8V, then V
CCAUX
must be 2.5V.
5. The -1L devices require V
CCAUX
= 2.5V when using the LVDS_25, LVDS_33, BLVDS_25, LVPECL_25, RSDS_25, RSDS_33, PPDS_25,
and PPDS_33 I/O standards on inputs. LVPECL_33 is not supported in the -1L devices.
6. Configuration data is retained even if V
CCO
drops to 0V.
7. Includes V
CCO
of 1.2V, 1.5V, 1.8V, 2.5V, and 3.3V.
8. For PCI systems, the transmitter and receiver should have common supplies for V
CCO
.
9. Devices with a -1L speed grade do not support Xilinx PCI IP.
10. Do not exceed a total of 100 mA per bank.
11. V
BATT
is required to maintain the battery backed RAM (BBR) AES key when V
CCAUX
is not applied. Once V
CCAUX
is applied, V
BATT
can be
unconnected. When BBR is not used, Xilinx recommends connecting to V
CCAUX
or GND. However, V
BATT
can be unconnected.

Spartan-6 FPGA Data Sheet: DC and Switching Characteristics
DS162 (v3.1.1) January 30, 2015 www.xilinx.com
Product Specification 4
Table 3: eFUSE Programming Conditions
(1)
Symbol Description Min Typ Max Units
V
FS
(2)
External voltage supply 3.2 3.3 3.4 V
I
FS
V
FS
supply current ––40mA
V
CCAUX
Auxiliary supply voltage relative to GND 3.2 3.3 3.45 V
R
FUSE
(3)
External resistor from R
FUSE
pin to GND 1129 1140 1151 Ω
V
CCINT
Internal supply voltage relative to GND 1.14 1.2 1.26 V
t
j
Temperature range 15–85°C
Notes:
1. These specifications apply during programming of the eFUSE AES key. Programming is only supported through JTAG.The AES key is only
supported in the following devices: LX75, LX75T, LX100, LX100T, LX150, and LX150T.
2. When programming eFUSE, V
FS
must be less than or equal to V
CCAUX
. When not programming or when eFUSE is not used, Xilinx
recommends connecting V
FS
to GND. However, V
FS
can be between GND and 3.45 V.
3. An R
FUSE
resistor is required when programming the eFUSE AES key. When not programming or when eFUSE is not used, Xilinx
recommends connecting the R
FUSE
pin to V
CCAUX
or GND. However, R
FUSE
can be unconnected.

Spartan-6 FPGA Data Sheet: DC and Switching Characteristics
DS162 (v3.1.1) January 30, 2015 www.xilinx.com
Product Specification 5
Table 4: DC Characteristics Over Recommended Operating Conditions
Symbol Description Min Typ Max Units
V
DRINT
Data retention V
CCINT
voltage (below which configuration data might be lost) 0.8 – – V
V
DRAUX
Data retention V
CCAUX
voltage (below which configuration data might be lost) 2.0 – – V
I
REF
V
REF
leakage current per pin for commercial (C) and industrial (I) devices –10 – 10 µA
V
REF
leakage current per pin for expanded (Q) devices –15 – 15 µA
I
L
Input or output leakage current per pin (sample-tested) for commercial (C) and industrial
(I) devices
–10 – 10 µA
Input or output leakage current per pin (sample-tested) for expanded (Q) devices –15 – 15 µA
I
HS
Leakage current on pins during hot
socketing with FPGA unpowered
All pins except PROGRAM_B, DONE, and
JTAG pins when HSWAPEN = 1
–20 – 20 µA
PROGRAM_B, DONE, and JTAG pins, or other
pins when HSWAPEN = 0
I
HS(HSWAPEN = 1)
+
I
RPU
µA
C
IN
(1)
Die input capacitance at the pad – – 10 pF
I
RPU
Pad pull-up (when selected) @ V
IN
=0V, V
CCO
=3.3V or V
CCAUX
= 3.3V 200 – 500 µA
Pad pull-up (when selected) @ V
IN
=0V, V
CCO
=2.5V or V
CCAUX
= 2.5V 120 – 350 µA
Pad pull-up (when selected) @ V
IN
=0V, V
CCO
= 1.8V 60 – 200 µA
Pad pull-up (when selected) @ V
IN
=0V, V
CCO
= 1.5V 40 – 150 µA
Pad pull-up (when selected) @ V
IN
=0V, V
CCO
= 1.2V 12 – 100 µA
I
RPD
Pad pull-down (when selected) @ V
IN
=V
CCO
, V
CCAUX
= 3.3V 200 – 550 µA
Pad pull-down (when selected) @ V
IN
=V
CCO
, V
CCAUX
= 2.5V 140 – 400 µA
I
BATT
(2)
Battery supply current – – 150 nA
R
DT
(3)
Resistance of optional input differential termination circuit, V
CCAUX
=3.3V – 100 – Ω
R
IN_TERM
(5)
Thevenin equivalent resistance of programmable input termination to V
CCO
(UNTUNED_SPLIT_25) for commercial (C) and industrial (I) devices
23 25 55 Ω
Thevenin equivalent resistance of programmable input termination to V
CCO
(UNTUNED_SPLIT_25) for expanded (Q) devices
20 25 55 Ω
Thevenin equivalent resistance of programmable input termination to V
CCO
(UNTUNED_SPLIT_50) for commercial (C) and industrial (I) devices
39 50 72 Ω
Thevenin equivalent resistance of programmable input termination to V
CCO
(UNTUNED_SPLIT_50) for expanded (Q) devices
32 50 74 Ω
Thevenin equivalent resistance of programmable input termination to V
CCO
(UNTUNED_SPLIT_75) for commercial (C) and industrial (I) devices
56 75 109 Ω
Thevenin equivalent resistance of programmable input termination to V
CCO
(UNTUNED_SPLIT_75) for expanded (Q) devices
47 75 115 Ω
R
OUT_TERM
Thevenin equivalent resistance of programmable output termination (UNTUNED_25) 11 25 52 Ω
Thevenin equivalent resistance of programmable output termination (UNTUNED_50) 21 50 96 Ω
Thevenin equivalent resistance of programmable output termination
(UNTUNED_75) 29 75 145 Ω
Notes:
1. The C
IN
measurement represents the die capacitance at the pad, not including the package.
2. Maximum value specified for worst case process at 25°C. LX75, LX75T, LX100, LX100T, LX150, and LX150T only.
3. Refer to IBIS models for R
DT
variation and for values at V
CCAUX
= 2.5V. IBIS values for R
DT
are valid for all temperature ranges.
4. V
CCO2
is not required for data retention. The minimum V
CCO2
for power-on reset and configuration is 1.65V.
5. Termination resistance to a V
CCO
/2 level.
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