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Dr.-Ing. Arendt Wintrich
Dr.-Ing. Ulrich Nicolai
Dr. techn. Werner Tursky
Univ.-Prof. Dr.-Ing. Tobias Reimann
SEMIKRON International GmbH
Bibliographic information published by the Deutsche Nationalbibliothek
The Deutsche Nationalbibliothek lists this publication in the Deutsche Nationalbibliograe;
detailed bibliographic data is available on the Internet under http://dnb.d-nb.de
The use of registered names, trade names, trademarks etc. in this publication does not imply, even
in the absence of a specic statement, that such names are exempt from the relevant protective laws
and regulations and therefore free for general use.
This manual has been developed and drawn up to the best of our knowledge. However, all information and
data provided is considered non-binding and shall not create liability for us. Publication of this manual is
done without consideration of other patents or printed publications and patent rights of any third party.
All component data referred to in this manual is subject to further research and development and, therefore,
is to be considered exemplary only. Binding specications are provided exclusively in the actual product-
The publisher reserves the right not to be responsible for the accuracy, completeness or topicality of any
direct or indirect references to or citations from laws, regulations or directives (e.g. DIN, VDI, VDE) in this
publication. We recommend obtaining the respectively valid versions of the complete regulations or direc-
tives for your own work.
2nd revised edition
ISLE Verlag 2015
© SEMIKRON International 2015
This manual is protected by copyright. All rights reserved including the right of reprinting, reproduc-
tion, distribution, microlming, storage in data processing equipment and translation in whole or in
part in any form.
Published by: ISLE Verlag, a commercial unit of the ISLE Association
Werner-von-Siemens-Strasse 16, D-98693 Ilmenau, Germany
Printed by: Gutenberg Druck+Medien GmbH
Schleifweg 1b, D-91080 Uttenreuth-Erlangen, Germany
Edited by: SEMIKRON International GmbH
Sigmundstrasse 200, D-90431 Nuremberg, Germany
Printed in Germany
Since the rst Application Manual for IGBT and MOSFET power modules was published, these
components have found their way into a whole host of new applications, mainly driven by the
growing need for the efcient use of fossil fuels, the reduction of environmental impact and the
resultant increased use of regenerative sources of energy. General development trends (space
requirements, costs, and energy efciency) and the advancement into new elds of application
(e.g. decentralised applications under harsh conditions) bring about new, stricter requirements
which devices featuring state-of-the-art power semiconductors have to live up to. For this reason,
this manual looks more closely than its predecessor at aspects pertaining to power semiconductor
application and also deals with rectier diodes and thyristors, which were last detailed in a SEMI-
KRON manual over 30 years ago.
This manual is aimed primarily at users and is intended to consolidate experience which up till
now has been contained in numerous separate articles and papers. For reasons of clarity and
where deemed necessary, theoretical background is gone into briey in order to provide a better
understanding of the subject matter. A deeper theoretical insight is provided in various highly-
recommendable textbooks, some of which have been cited in the bibliography to this manual.
SEMIKRON's wealth of experience and expertise has gone into this advanced application manual
which deals with power modules based on IGBT, MOSFET and adapted diodes, as well as recti-
er diodes and thyristors in module or discrete component form from the point of view of the user.
Taking the properties of these components as a basis, the manual provides tips on how to use and
interpret data sheets, as well as application notes on areas such as cooling, power layout, driver
technology, protection, parallel and series connection, and the use of transistor modules in soft
This manual includes contributions from the 1998 "Application Manual for IGBT and MOSFET
Power Modules" written by Prof. Dr.-Ing. Josef Lutz and Prof. Dr.-Ing. habil. Jürgen Petzoldt,
whose authorship is not specically cited in the text here. The same applies to excerpts taken from
the SEMIKRON Power Semiconductor Manual by Dr.-Ing. Hans-Peter Hempel. We would like to
thank everyone for granting their consent to use the relevant excerpts.
We would also like to take this opportunity to express our gratitude to Rainer Weiß and Dr. Uwe
Scheuermann for their expertise and seless help and support. Thanks also go to Dr.-Ing. Thomas
Stockmeier, Peter Beckedahl and Thomas Grasshoff for proong and editing the texts, and Elke
Schöne and Gerlinde Stark for their editorial assistance.
We very much hope that the readers of this manual nd it useful and informative. Your feedback
and criticism is always welcome. If this manual facilitates component selection and design-in tasks
on your part, our expectations will have been met.
Nuremberg, Dresden, Ilmenau; November 2010
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