Preface
Since the rst Application Manual for IGBT and MOSFET power modules was published, these
components have found their way into a whole host of new applications, mainly driven by the
growing need for the efcient use of fossil fuels, the reduction of environmental impact and the
resultant increased use of regenerative sources of energy. General development trends (space
requirements, costs, and energy efciency) and the advancement into new elds of application
(e.g. decentralised applications under harsh conditions) bring about new, stricter requirements
which devices featuring state-of-the-art power semiconductors have to live up to. For this reason,
this manual looks more closely than its predecessor at aspects pertaining to power semiconductor
application and also deals with rectier diodes and thyristors, which were last detailed in a SEMI-
KRON manual over 30 years ago.
This manual is aimed primarily at users and is intended to consolidate experience which up till
now has been contained in numerous separate articles and papers. For reasons of clarity and
where deemed necessary, theoretical background is gone into briey in order to provide a better
understanding of the subject matter. A deeper theoretical insight is provided in various highly-
recommendable textbooks, some of which have been cited in the bibliography to this manual.
SEMIKRON's wealth of experience and expertise has gone into this advanced application manual
which deals with power modules based on IGBT, MOSFET and adapted diodes, as well as recti-
er diodes and thyristors in module or discrete component form from the point of view of the user.
Taking the properties of these components as a basis, the manual provides tips on how to use and
interpret data sheets, as well as application notes on areas such as cooling, power layout, driver
technology, protection, parallel and series connection, and the use of transistor modules in soft
switching applications.
This manual includes contributions from the 1998 "Application Manual for IGBT and MOSFET
Power Modules" written by Prof. Dr.-Ing. Josef Lutz and Prof. Dr.-Ing. habil. Jürgen Petzoldt,
whose authorship is not specically cited in the text here. The same applies to excerpts taken from
the SEMIKRON Power Semiconductor Manual by Dr.-Ing. Hans-Peter Hempel. We would like to
thank everyone for granting their consent to use the relevant excerpts.
We would also like to take this opportunity to express our gratitude to Rainer Weiß and Dr. Uwe
Scheuermann for their expertise and seless help and support. Thanks also go to Dr.-Ing. Thomas
Stockmeier, Peter Beckedahl and Thomas Grasshoff for proong and editing the texts, and Elke
Schöne and Gerlinde Stark for their editorial assistance.
We very much hope that the readers of this manual nd it useful and informative. Your feedback
and criticism is always welcome. If this manual facilitates component selection and design-in tasks
on your part, our expectations will have been met.
Nuremberg, Dresden, Ilmenau; November 2010
Arendt Wintrich
Ulrich Nicolai
Tobias Reimann
Werner Tursky
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