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78
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0 25 50 75 100
Efficiency (%)
Output Load (%)
115V
AC
230V
AC
CoC V5 Tier 2 Average
DOE Level VI Average
CoC 10%
load
4-Point Avg. Efficiency:
93.9% at 115V
AC
92.5% at 230V
AC
UCC24612
~
~
+
±
Half-bridge Driver
UCC28780
V
O
RUN
PWMH PWML
VDD
FB
SWS
V
SW
HVG
CS
VS
GND
NTC
RDM
RTZ
BUR
REF
HV Startup +
ZVS Sense
Copyright © 2018, Texas Instruments Incorporated
CC/CV
Regulator
SET
Q
L
Q
H
C
CLAMP
C
BULK
N
PS
:1
Q
SEC
R
CS
R
OPP
D
BD
V
BULK
C
O
C
VDD
D
AUX
C
REF
R
FB
C
HVG
R
RTZ
R
RDM
R
VS1
R
BUR1
R
BUR2
R
VS2
N
A
N
P
N
S
R
BIAS1
R
BIAS2
R
DIFF
C
DIFF
VD
VG
VS
VDD
REG
R
CCS
C
REG
V
AC
R
BLEED
V
AUX
Product
Folder
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLUSD12
UCC28780
ZHCSH21A –OCTOBER 2017–REVISED FEBRUARY 2018
UCC28780 高高频频有有源源钳钳位位反反激激式式控控制制器器
1
1 特特性性
1
• 通过自适应控制对初级 FET 进行完全和部分零电压
开关 (ZVS)
• 外部硅或氮化镓 FET 可编程时序
• 开关频率高达 1MHz
• 可编程自适应突发控制和待机模式,可提高轻载效
率,并具有低输出纹波和可闻噪声抑制功能
• 无需直接的线路感应即可检测掉电
• 通过精确的可编程过功率保护 (OPP) 支持峰值功率
模式
• 故障保护:过热、输出过压、输出短路、过流和引
脚故障
• 与基于光耦合器的反馈直接相连,因此支持可动态
扩展的输出电压
• 内部软启动
• 带外部使能端的 NTC 热敏电阻接口
2 应应用用
• 用于笔记本电脑、平板电脑、电视机、机顶盒和打
印机的高密度直流/交流适配器
• USB 供电、直接和快速移动充电器
• 交流/直流或直流/直流辅助电源
3 说说明明
UCC28780 是一款高频有源钳位反激式控制器,可实
现符合严格全球效率标准(如美国能源部 6 级和欧盟
CoC V5 Tier-2 能效标准)的高密度交流/直流电源。
用户可编程高级控制律 特性 可以针对硅 (Si) 和氮化镓
(GaN) 功率 FET 进行性能优化。由于具有逻辑电平栅
极信号和使能输出,因此使用组合了驱动器和 GaN
FET 的开关器件进行直接运行的能力得到进一步增
强。
此器件凭借先进的自动调谐技术、自适应死区时间优化
和可变开关频率控制律,可在宽广的工作范围内实现零
电压开关 (ZVS)。使用可根据输入和输出条件改变运行
方式的自适应多模式控制,UCC28780 可在提高效率
的同时减轻可闻噪声。凭借高达 1MHz 的可变开关频
率和精确的可编程过功率保护功能(该功能可在宽广的
线路范围内为散热设计提供始终如一的功率),无源组
件的尺寸可进一步缩小,并实现高功率密度。
UCC28780与 VDS 感应同步整流器控制器(如
UCC24612)结合使用,可实现更高的转换效率和非常
紧凑的设计。
器器件件信信息息
(1)
可可订订购购器器件件型型号号 封封装装 封封装装尺尺寸寸((标标称称值值))
UCC28780RTE WQFN-16 3.00mm × 3.00mm
UCC28780D SOIC-16 10.33mm × 7.50mm
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
简简化化原原理理图图
45W、、20V GaN-ACF 适适配配器器效效率率

2
UCC28780
ZHCSH21A –OCTOBER 2017–REVISED FEBRUARY 2018
www.ti.com.cn
Copyright © 2017–2018, Texas Instruments Incorporated
目目录录
1 特特性性.......................................................................... 1
2 应应用用.......................................................................... 1
3 说说明明.......................................................................... 1
4 修修订订历历史史记记录录 ........................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 5
6.1 Absolute Maximum Ratings ...................................... 5
6.2 ESD Ratings.............................................................. 5
6.3 Recommended Operating Conditions....................... 6
6.4 Thermal Information of SOIC.................................... 6
6.5 Thermal Information of WQFN.................................. 6
6.6 Electrical Characteristics........................................... 7
6.7 Typical Characteristics............................................ 10
7 Detailed Description............................................ 12
7.1 Overview ................................................................. 12
7.2 Functional Block Diagram ....................................... 13
7.3 Detailed Pin Description.......................................... 14
7.4 Device Functional Modes........................................ 21
8 Application and Implementation ........................ 37
8.1 Application Information............................................ 37
8.2 Typical Application Circuit....................................... 37
9 Power Supply Recommendations...................... 51
10 Layout................................................................... 52
10.1 Layout Guidelines ................................................. 52
10.2 Layout Example .................................................... 54
11 器器件件和和文文档档支支持持 ..................................................... 58
11.1 文档支持 ............................................................... 58
11.2 接收文档更新通知 ................................................. 58
11.3 社区资源................................................................ 58
11.4 商标 ....................................................................... 58
11.5 静电放电警告......................................................... 58
11.6 Glossary................................................................ 58
12 机机械械、、封封装装和和可可订订购购信信息息....................................... 59
4 修修订订历历史史记记录录
注:之前版本的页码可能与当前版本有所不同。
日日期期 修修订订版版本本 说说明明
2017 年(2018 年) A 第一版.

16 15 14 13
5 6 7 8
12
2
10
9
1
11
3
4
RDM
RTZ
FB
NTC
SWS
HVG
VS
SET
GND
VDD
REF
BUR
CS
PWML
PWMH
RUN
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VDD
GND
CS
PWML
PWMH
RUN
SWS
HVG
REF
BUR
RDM
RTZ
FB
NTC
SET
VS
3
UCC28780
www.ti.com.cn
ZHCSH21A –OCTOBER 2017–REVISED FEBRUARY 2018
Copyright © 2017–2018, Texas Instruments Incorporated
5 Pin Configuration and Functions
D Package
16-Pin SOIC
Top View
RTE Package
16-Pin WQFN
Top View

4
UCC28780
ZHCSH21A –OCTOBER 2017–REVISED FEBRUARY 2018
www.ti.com.cn
Copyright © 2017–2018, Texas Instruments Incorporated
(1) I = Input, O = Output, P = Power, G = Ground
Pin Functions
PIN
TYPE
(1)
DESCRIPTION
NAME SOIC WQFN
BUR 15 13 I This pin is used to program the burst level of the converter at light load. A resistive divider
between REF and GND is used to set a voltage at this pin to determine the peak current level
when the converter enters the adaptive burst mode. In addition, the Thevenin resistance on
BUR pin (equivalent resistance of the divider resistors in parallel) is used to set an offset
voltage for smooth mode transition which increases the peak current level when the converter
enters the low power mode.
CS 3 1 I This is the current sense input pin. This pin couples through a line-compensation resistor to a
current-sense resistor to sense and control the peak primary current in each switching cycle. A
current sourced from this pin, which magnitude is proportional to the converter’s input voltage
derived from the VS-pin input signal, creates an offset voltage across the line-compensation
resistor to program an OPP level at high line.
FB 12 10 I The feedback current signal to close the converter’s regulation loop is coupled to this pin. This
pin presents a 4-V output that is designed to have 0-µA to 75-µA current pulled out of the pin
corresponding to the converter operating from full-power to zero-power conditions.
GND 2 16 G Ground reference and return for all controller signals.
HVG 8 6 O The high-voltage gate pin is used to control the gate of an external depletion-mode MOSFET
for start-up and switch-node voltage sensing. A 2.2-nF ceramic bypass capacitor to ground is
required.
NTC 11 9 I This is an interface to an external NTC (negative temperature coefficient) thermistor for remote
temperature sensing. Pulling this pin low shuts down PWM action and initiates a fault
response.
PWMH 5 3 O The PWMH pin is a logic-level output signal used to control the gate of the high-side clamp
switch through an external gate driver.
PWML 4 2 O The PWML pin is a logic-level output signal used to control the gate of the low-side primary
switch through an external gate driver.
RDM 14 12 I A resistor to ground on this pin programs a synthesized demagnetization time used to control
the on-time of the high-side switch to achieve zero voltage switching on the low-side switch.
The controller applies a voltage on this pin that varies with the output voltage derived from the
VS pin signal.
REF 16 14 O 5V reference output that requires a 0.1-µF ceramic bypass capacitor to ground. This reference
is used to power internal circuits and can supply a limited external load current.
RTZ 13 11 I A resistor to ground on this pin programs an adaptive transition-to-zero delay from the turn-off
edge of the high-side clamp switch to the turn-on edge of the low-side switch.
RUN 6 4 O This output pin is high when the controller is in a run state. During start-up and wait states this
output is low. It can be used to enable and disable the external gate drivers to reduce the
static power consumption. There is a preset delay, t
D(RUN-PWML)
, of about 2.2 µs that delays
the initiation of PWML switching after this pin has gone high.
SET 10 8 I This pin is used to configure the controller to be optimized for Gallium Nitride (GaN) power
FETs or silicon (Si) power FETs on the primary side. Depending on setting, it will optimize
parameters of the ZVS control loop, dead-time adjustment, and protection features. When
pulled high to REF pin, it is optimized for Si FETs. When pulled low to GND, it is optimized for
GaN FETs .
SWS 7 5 I This sensing input is used to monitor the switch-node voltage as it nears zero volts in normal
operation. During start-up, this pin is connected to the VDD pin internally to allow the high-
voltage sensing network to provide start-up current.
VDD 1 15 P Bias power input to the controller. A hold-up capacitor to ground is required for the bias power
supplied from the transformer auxiliary winding to this pin.
VS 9 7 I This voltage sensing input pin is coupled to the auxiliary winding of the converter’s transformer
via a resistor divider. The pin and the associated external resistors are used to monitor the
output and input voltages of the converter.

5
UCC28780
www.ti.com.cn
ZHCSH21A –OCTOBER 2017–REVISED FEBRUARY 2018
Copyright © 2017–2018, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
Input Voltage VDD 38 V
SWS –6 38
VDD-SWS (Run state) -20 38
CS –0.3 3.6
NTC –0.3 7
FB –0.3 7
VS (Continuous) –0.75 7
VS (Transient, 100ns Max.) –1 7
RTZ –0.3 7
BUR –0.3 7
SET –0.3 7
RDM –0.3 7
Output Voltage REF –0.3 7 V
HVG –0.3 25
PWML, PWMH, RUN –0.3 7
Source Current REF 5 mA
HVG Self-limiting
VS (Continuous) 2
VS (Transient, 100ns Max.) 2.5
FB 1
PWML, PWMH, RUN 1
RTZ Self-limiting
RDM Self-limiting
Sink Current PWML, PWMH, RUN 1 mA
SWS 5 mA
Operating junction temperature, T
J
–55 150 °C
Storage temperature, T
stg
–55 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101
(2)
±500
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