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Foresee(江波龙) NCLD3B2512M32 Datasheet
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更新于2023-05-27
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江波龙(Foresee)NCLD3B2512M32,它是一颗2GB,533Mhz的LPDDR3内存芯片。178-Ball,8GB or 16GB
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178ball FBGA Specification
8Gb LPDDR3 (x32)
16Gb LPDDR3 (x32)
1
V1.0

2
Document Title
FBGA
8Gb (x32, 1CS) LPDDR3
Revision History
Revision No.
History Draft Date Remark
V1.0 - Initial Draft Dec . 2015 Preliminary
16Gb (x32, 2CS) LPDDR3
8Gb,16Gb: 178-Ball, LPDDR3 SDRAM

3
FEATURES
[ FBGA ]
● Operation Temperature
- (-25)
o
C ~ 70
o
C
● Package
- 178-ball FBGA - 12.0x11.5mm
2
- Lead & Halogen Free
[ LPDDR3 ]
VDD1 = 1.8V (1.7V to 1.95V)
VDD2, VDDCA and VDDQ = 1.2V (1.14V to 1.30)
HSUL_12 interface (High Speed Unterminated Logic 1.2V)
Double data rate architecture for command, address and data Bus;
- all control and address except CS_n, CKE latched at both rising and falling edge of the clock
- CS_n, CKE latched at rising edge of the clock
- two data accesses per clock cycle
Differential clock inputs (CK_t, CK_c)
Bi-directional differential data strobe (DQS_t, DQS_c)
- Source synchronous data transaction aligned to bi-directional differential data strobe (DQS_t, DQS_c)
- Data outputs aligned to the edge of the data strobe (DQS_t, DQS_c) when READ operation
- Data inputs aligned to the center of the data strobe (DQS_t, DQS_c) when WRITE operation
DM masks write data at the both rising and falling edge of the data strobe
Programmable RL (Read Latency) and WL (Write Latency)
Programmable burst length: 8
Auto refresh and self refresh supported
All bank auto refresh and per bank auto refresh supported
Auto TCSR (Temperature Compensated Self Refresh)
PASR (Partial Array Self Refresh) by Bank Mask and Segment Mask
DS (Drive Strength)
DPD (Deep Power Down)
ZQ (Calibration)
ODT (On Die Termination)
8Gb,16Gb: 178-Ball, LPDDR3 SDRAM
1.00t, 0.65mm pitch ,

4
Functional Block Diagram
CK_t, CK_c
ZQ
DQ0~DQ31
CS0, CKE0
8Gb x32 device
CA0 ~ CA9
DM0~DM3,
VDD1, VDD2, VDDCA, VDDQ, Vref(CA/DQ)
VSS, VSSCA, VSSQ
(256M x 32)
Note
1. Total current consumption is dependent to user operating conditions. AC and DC Characteristics shown in
this specification are based on a single die. See the section of “DC Parameters and Operating Conditions”
DQS0_t~DQS3_t,
DQS0_c~DQS3_c,
8Gb,16Gb: 178-Ball, LPDDR3 SDRAM
CK_t, CK_c
ZQ
DQ0~DQ31
8Gb x32 device
CA0 ~ CA9
DM0~DM3,
VDD1, VDD2, VDDCA, VDDQ, Vref(CA/DQ)
VSS, VSSCA, VSSQ
(256M x 32)
DQS0_t~DQS3_t,
DQS0_c~DQS3_c,
8Gb x32 device
(256M x 32)
CS0, CKE0
CS1, CKE1

ORDERING INFORMATION
8Gb,16Gb: 178-Ball, LPDDR3 SDRAM
Part Number
Memory
Combination
Operation
Voltage
Density
Speed
Package
LPDDR3 8Gb
1.8V/1.2/1.2/1.2
8Gb (x32, 1CS)
DDR3 1066
178Ball FBGA
(Lead & Halogen Free)
LPDDR3 16Gb
1.8V/1.2/1.2/1.2
16Gb (x32, 2CS)
178Ball FBGA
(Lead & Halogen Free)
NCLD3B2512M32
Part Number Information
NCLD3B1256M32
DDR3 1066
NC LD3 B 1 256M32
Product Category: NC
Product Mode:
LD3=LPDDR3
Ball Type:
B=178ball
Depth & Width:
256M32=256Megx32bit
Chip select:
1=1CS
NC LD3 B 2 512M32
Product Category: NC
Product Mode:
LD3=LPDDR3
Ball Type:
B=178ball
Depth & Width:
512M32=512Megx32bit
Chip select:
2=2CS
5
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