opa847资料，低噪声放大器；_opa847高速宽带放大模块

opa847

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Wideband, Ultra-Low Noise, Voltage-Feedback

OPERATIONAL AMPLIFIER with Shutdown

APPLICATIONS

● HIGH DYNAMIC RANGE ADC PREAMPS

● LOW NOISE, WIDEBAND, TRANSIMPEDANCE

AMPLIFIERS

● WIDEBAND, HIGH GAIN AMPLIFIERS

● LOW NOISE DIFFERENTIAL RECEIVERS

● ULTRASOUND CHANNEL AMPLIFIERS

● IMPROVED UPGRADE FOR THE OPA687,

CLC425, AND LMH6624

FEATURES

● HIGH GAIN BANDWIDTH: 3.9GHz

● LOW INPUT VOLTAGE NOISE: 0.85nV/

√Hz

● VERY LOW DISTORTION: –105dBc (5MHz)

● HIGH SLEW RATE: 950V/µs

● HIGH DC ACCURACY: V

< ±100µV

● LOW SUPPLY CURRENT: 18.1mA

● LOW SHUTDOWN POWER: 2mW

● STABLE FOR GAINS

≥ 12

Ultra-High Dynamic Range

Differential ADC Driver

DESCRIPTION

The OPA847 combines very high gain bandwidth and large

signal performance with an ultra-low input noise voltage

(0.85nV/

√Hz

) while using only 18mA supply current. Where

power saving is critical, the OPA847 also includes an op-

tional power shutdown pin that, when pulled low, disables the

amplifier and decreases the supply current to < 1% of the

powered-up value. This optional feature may be left discon-

nected to ensure normal amplifier operation when no power-

down is required.

The combination of very low input voltage and current noise,

along with a 3.9GHz gain bandwidth product, make the

OPA847 an ideal amplifier for wideband transimpedance

applications. As a voltage gain stage, the OPA847 is opti-

mized for a flat frequency response at a gain of +20V/V and

is stable down to gains as low as +12V/V. New external

compensation techniques allow the OPA847 to be used at

any inverting gain with excellent frequency response control.

Using this technique in a differential Analog-to-Digital Con-

verter (ADC) interface application, shown below, can deliver

one of the highest dynamic-range interfaces available.

OPA847

SBOS251E – JULY 2002 – REVISED DECEMBER 2008

www.ti.com

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

+5V

–5V

OPA847

+5V

–5V

850Ω

39pF

OPA847

1.7pF

100pF

INP

INN

0.1µF

1.7pF

850Ω

39pF

100Ω

20Ω

2kΩ

20Ω

0.001µF

1:2

50Ω Source

< 5.1dB

Noise

Figure

ADS5500

14-Bit

125MSPS

100Ω

100pF

24.6dB Gain

Frequency (MHz)

DIFFERENTIAL OPA847 DRIVER DISTORTION

Harmonic Distortion (dBc)

–70

–75

–80

–85

–90

–95

–100

–105

–110

20 30 40 50

, at converter input.

2nd-Harmonic

3rd-Harmonic

OPA847 RELATED PRODUCTS

INPUT NOISE GAIN BANDWIDTH

SINGLES VOLTAGE (nV/

√Hz

) PRODUCT (MHz)

OPA842 2.6 200

OPA843 2.0 800

OPA846 1.2 1750

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

All trademarks are the property of their respective owners.

OPA847

SBOS251E

www.ti.com

PIN CONFIGURATIONS

Top View SO

ABSOLUTE MAXIMUM RATINGS

(1)

Power Supply ............................................................................... ±6.5V

Internal Power Dissipation ........................ See Thermal Analysis Section

Differential Input Voltage .................................................................. ±1.2V

Input Voltage Range............................................................................ ±V

Storage Temperature Range: D, DBV ........................... –65°C to +125°C

Lead Temperature (soldering, 10s) .............................................. +300°C

Junction Temperature (T

) ........................................................... +150°C

ESD Rating (Human Body Model) .................................................. 1500V

(Charge Device Model) ............................................... 1500V

(Machine Model) ........................................................... 100V

NOTE: (1) Stresses above these ratings may cause permanent damage.

Exposure to absolute maximum conditions for extended periods may degrade

device reliability. These are stress ratings only, and functional operation of the

device at these or any other conditions beyond those specified is not implied.

ELECTROSTATIC

DISCHARGE SENSITIVITY

This integrated circuit can be damaged by ESD. Texas Instru-

ments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling

and installation procedures can cause damage.

ESD damage can range from subtle performance degradation

to complete device failure. Precision integrated circuits may be

more susceptible to damage because very small parametric

changes could cause the device not to meet its published

specifications.

PACKAGE/ORDERING INFORMATION

(1)

SPECIFIED

PACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT

PRODUCT PACKAGE-LEAD DESIGNATOR RANGE MARKING NUMBER MEDIA, QUANTITY

OPA847 SO-8 D –40°C to +85°C OPA847 OPA847ID Rails, 100

"" " " "OPA847IDR Tape and Reel, 2500

OPA847 SOT23-6 DBV –40°C to +85°C OATI OPA847IDBVT Tape and Reel, 250

"" " " "OPA847IDBVR Tape and Reel, 3000

Top View SOT

Inverting Input

Noninverting Input

–V

DIS

Output

NC = No Connection

Inverting Input

Output

–V

DIS

Noninverting Input

OATI

Pin Orientation/Package Marking

NOTE: (1) For the most current package and ordering information, see the Package Option Addendum located at the end of this document, or see the TI web site

at www.ti.com.

OPA847

SBOS251E

www.ti.com

OPA847ID, IDBV

TYP MIN/MAX OVER TEMPERATURE

C to –40

C to

MIN/

TEST

PARAMETER CONDITIONS +25°C +25°C

(1)

70°C

(2)

+85°C

(2)

UNITS MAX

LEVEL

(3)

ELECTRICAL CHARACTERISTICS: V

= ±5V

Boldface limits are tested at +25°C.

= 100Ω, R

= 750Ω, R

= 39.2Ω, and G = +20 (see Figure 1 for AC performance only), unless otherwise noted.

NOTES: (1) Junction temperature = ambient for +25°C specifications. (2) Junction temperature = ambient at low temperature limit: junction temperature = ambient +23°C

at high temperature limit for over temperature specifications. (3) Test Levels: (A) 100% tested at 25°C. Over temperature limits by characterization and simulation.

(B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive out of node. V

is the input common-mode

voltage. (5) Tested < 3dB below minimum specified CMRR at ±CMIR limits.

AC PERFORMANCE (see Figure 1)

Closed-Loop Bandwidth G = +12, R

= 39.2Ω, V

= 200mV

600 MHz typ C

G = +20, R

= 39.2Ω, V

= 200mV

350 230 210 195 MHz min B

G = +50, R

= 39.2Ω, V

= 200mV

78 63 60 57 MHz min B

Gain Bandwidth Product (GBP) G ≥ +50 3900 3100 3000 2800 MHz min B

Bandwidth for 0.1dB Gain Flatness G = +20, R

= 100Ω 60 40 35 30 MHz min B

Peaking at a Gain of +12 4.5 7 10 12 dB max B

Harmonic Distortion G = +20, f = 5MHz, V

= 2V

2nd-Harmonic R

= 100Ω –74 –70 –69 –68 dBc max B

= 500Ω –105 –90 –89 –88 dBc max B

3rd-Harmonic R

= 100Ω –103 –96 –91 –88 dBc max B

= 500Ω –110 –105 –100 –90 dBc max B

2-Tone, 3rd-Order Intercept G = +20, f = 20MHz 39 37 36 35 dBm min B

Input Voltage Noise Density f > 1MHz 0.85 0.92 0.98 1.0 nV/

√Hz

max B

Input Current Noise Density f > 1MHz 2.5 3.5 3.6 3.7 pA/

√Hz

max B

Pulse Response

Rise-and-Fall Time 0.2V Step 1.2 1.75 2.0 2.2 ns max B

Slew Rate 2V Step 950 700 625 535 V/µsminB

Settling Time to 0.01% 2V Step 20 ns typ C

0.1% 2V Step 10 12 14 18 ns max B

1% 2V Step 6 8 10 12 ns max B

DC PERFORMANCE

(4)

Open-Loop Voltage Gain (A

= 0V 98 90 89 88 dB min A

Input Offset Voltage V

= 0V ±0.1 ±0.5 ±0.58 ±0.60 mV max A

Average Offset Voltage Drift V

= 0V ±0.25 ±0.25 ±1.5 ±1.5 µV/°CmaxB

Input Bias Current V

= 0V –19 –39 –41 –42 µAmaxA

Input Bias Current Drift (magnitude) V

= 0V –15 –15 –40 –70 nA/°CmaxB

Input Offset Current V

= 0V ±0.1 ±0.6 ±0.7 ±0.85 µAmaxA

Input Offset Current Drift V

= 0V ±0.1 ±0.1 ±2 ±3.5 nA/°CmaxB

INPUT

Common-Mode Input Range (CMIR)

(5)

±3.3 ±3.1 ±3.0 ±2.9 V min A

Common-Mode Rejection Ratio (CMRR) V

= ±0.5V, Input-Referred 110 95 93 90 dB min A

Input Impedance

Differential V

= 0V 2.7 || 2.0 kΩ || pF typ C

Common-Mode V

= 0V 2.3 || 1.7 MΩ || pF typ C

OUTPUT

Output Voltage Swing ≥ 400Ω Load ±3.5 ±3.3 ±3.1 ±3.0 V min A

100Ω Load ±3.4

±3.2 ±3.0 ±2.9 V min A

Current Output, Sourcing V

= 0V 100 60 56 52 mA min A

Current Output, Sinking V

= 0V –75 –60 –56 –52 mA min A

Closed-Loop Output Impedance G = +20, f = < 100kHz 0.003 Ω typ C

POWER SUPPLY

Specified Operating Voltage ±5 V typ C

Maximum Operating Voltage ±6

±6 ±6 ±6VmaxA

Maximum Quiescent Current V

= ±5V 18.1 18.4 18.7 18.9 mA max A

Minimum Quiescent Current V

= ±5V 18.1 17.8 17.5 17.1 mA min A

Power-Supply Rejection Ratio

+PSRR, –PSRR |V

| = 4.5V to 5.5V, Input-Referred 100 95 93 90 dB min A

POWER-DOWN (disabled low) (Pin 8 on SO-8; Pin 5 on SOT23-6)

Power-Down Quiescent Current (+V

) –200 –270 –320 –370 µAmaxA

On Voltage (enabled high or floated) 3.5 3.75 3.85 3.95 V min A

Off Voltage (disabled asserted low) 1.8 1.7 1.6 1.5 V max A

Power-Down Pin Input Bias Current (V

DIS

= 0) 150 190 200 210 µAmaxA

Power-Down Time 200 ns typ C

Power-Up Time 60 ns typ C

Off Isolation 5MHz, Input to Output 70 dB typ C

THERMAL

Specification ID, IDBV

–40 to +85

°C typ C

Thermal Resistance,

Junction-to-Ambient

DSO-8 125 °C/W typ C

DBV SOT23 150 °C/W typ C

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