DDR3 SDRAM规格详解：MT41J512M4/MT41J256M8/MT41J128M16

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"MT41J系列是DDR3 SDRAM内存芯片，由不同的存储容量型号组成，包括MT41J512M4、MT41J256M8和MT41J128M16。这些芯片设计为1.5V工作电压，具有中心终止的推挽式I/O接口，支持差分双向数据 strobe信号，并采用8n位预取架构。它们有8个内部银行，提供多种可编程延迟选项，如CAS读取延迟（CL）、附加CAS延迟（AL）和基于时钟周期的CAS写入延迟（CWL）。此外，这些芯片支持固定长度为8的突发传输和4的突发切分功能，可以通过模式寄存器集（MRS）进行设置。还具备在飞行选择BC4或BL8的功能。内存芯片还包含了自我刷新模式，适应不同温度范围下的刷新周期，并提供自我刷新温度（SRT）和自动自我刷新（ASR）功能。其他特性包括写级别校准、多功能寄存器和输出驱动校准。MT41J系列内存芯片采用无铅FBGA封装，有不同数量的引脚和尺寸供选择，如78球和96球封装，以及不同的配置标记，如512M4、256M8和128M16，分别对应512兆字节x4、256兆字节x8和128兆字节x16的存储容量。" DDR3 SDRAM（Double Data Rate Third Generation Synchronous Dynamic Random-Access Memory）是一种高速、低功耗的内存技术，比其前代DDR2提供更高的数据传输速率。MT41J系列是DDR3内存的典型代表，其中的“M4”、“M8”和“M16”表示数据宽度，分别代表4位、8位和16位的数据线宽度，而数字前的数值（512、256、128）则代表每个数据通道上的存储容量。 1. **电压和I/O**：MT41J系列工作在1.5V±0.075V的电压范围内，使用1.5V中心终止的推挽式I/O，确保信号完整性，同时减少功耗。 2. **数据传输**：支持差分双向数据strobes，这意味着数据在时钟的上升沿和下降沿均能被传输，显著提高了数据传输速率。 3. **预取架构**：8n位预取架构使得内存可以在一个时钟周期内处理更多的数据，提高数据吞吐量。 4. **内部银行**：8个内部银行允许并行访问不同位置的数据，增加了内存的并发处理能力。 5. **延迟控制**：通过可编程的CAS读取、写入延迟以及附加CAS延迟，可以优化系统性能，适应不同应用场景的需求。 6. **突发传输**：固定长度的突发传输（BL8）和突发切分（BC4）提供了灵活性，使得数据传输更加高效。 7. **自我刷新**：内存芯片能够根据温度条件自动调整刷新周期，确保数据的稳定存储，特别适用于移动设备或温度变化较大的环境。 8. **封装形式**：采用无铅FBGA封装，提供78球和96球两种选择，不同封装尺寸（8mmx10.5mm和8mmx14mm）满足不同设备的尺寸需求。 9. **配置标记**：通过不同的标记（如512M4、256M8、128M16），用户可以快速识别内存的容量和数据宽度。这些特性使MT41J系列DDR3 SDRAM芯片成为高性能计算、服务器、工作站和嵌入式系统等应用的理想选择，提供高带宽、低功耗以及可靠的内存解决方案。

Ball Assignments and Descriptions

Figure 6: 78-Ball FBGA – x4, x8 (Top View)

1234 67895

DDQ

SSQ

REFDQ

ODT

SSQ

DQ2

NF, DQ6

DDQ

CS#

BA0

RESET#

DQ0

DQS

DQS#

NF, DQ4

RAS#

CAS#

WE#

BA2

A13

NF, NF/TDQS#

DM, DM/TDQS

DQ1

NF, DQ7

CK#

A10/AP

A12/BC#

A11

A14

DDQ

SSQ

DDQ

CKE

SSQ

DQ3

NF, DQ5

REFCA

BA1

Notes:

1. Ball descriptions listed in Table 3 (page 18) are listed as “x4, x8” if unique; otherwise,

x4 and x8 are the same.

2. A comma separates the configuration; a slash defines a selectable function.

Example: D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies

to the x8 configuration only—selectable between NF or TDQS# via MRS (symbols are de-

fined in Table 3).

2Gb: x4, x8, x16 DDR3 SDRAM

Ball Assignments and Descriptions

PDF: 09005aef826aaadc

2Gb_DDR3_SDRAM.pdf - Rev. S 02/16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 3: 78-Ball FBGA – x4, x8 Ball Descriptions

Symbol Type Description

A[14:13], A12/BC#,

A11, A10/AP, A[9:0]

Input Address inputs: Provide the row address for ACTIVATE commands, and the column

address and auto precharge bit (A10) for READ/WRITE commands, to select one

location out of the memory array in the respective bank. A10 sampled during a

PRECHARGE command determines whether the PRECHARGE applies to one bank

(A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also

provide the op-code during a LOAD MODE command. Address inputs are referenced

to V

REFCA

. A12/BC#: When enabled in the mode register (MR), A12 is sampled during

READ and WRITE commands to determine whether burst chop (on-the-fly) will be

performed (HIGH = BL8 or no burst chop, LOW = BC4). See Table 70 (page 116).

BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ,

WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode

BA[2:0] are referenced to V

REFCA

CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals

are sampled on the crossing of the positive edge of CK and the negative edge of

CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#.

CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal

circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is de-

pendent upon the DDR3 SDRAM configuration and operating mode. Taking CKE

LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks

idle), or active power-down (row active in any bank). CKE is synchronous for power-

down entry and exit and for self refresh entry. CKE is asynchronous for self refresh

exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during

POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF

REFRESH. CKE is referenced to V

REFCA

CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the

command decoder. All commands are masked when CS# is registered HIGH. CS#

provides for external rank selection on systems with multiple ranks. CS# is considered

part of the command code. CS# is referenced to V

REFCA

DM Input Input data mask: DM is an input mask signal for write data. Input data is masked

when DM is sampled HIGH along with the input data during a write access.

Although the DM ball is input-only, the DM loading is designed to match that of the

DQ and DQS balls. DM is referenced to V

REFDQ

. DM has an optional use as TDQS on

the x8.

ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW)

termination resistance internal to the DDR3 SDRAM. When enabled in normal

operation, ODT is only applied to each of the following balls: DQ[7:0], DQS, DQS#,

and DM for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is

ignored if disabled via the LOAD MODE command. ODT is referenced to V

REFCA

RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command

being entered and are referenced to V

REFCA

RESET# Input Reset: RESET# is an active LOW CMOS input referenced to V

. The RESET# input re-

ceiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × V

and

DC LOW ≤ 0.2 × V

DDQ

. RESET# assertion and de-assertion are asynchronous.

2Gb: x4, x8, x16 DDR3 SDRAM

Ball Assignments and Descriptions

PDF: 09005aef826aaadc

2Gb_DDR3_SDRAM.pdf - Rev. S 02/16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 4: 96-Ball FBGA – x16 Ball Descriptions

Symbol Type Description

A13, A12/BC#, A11,

A10/AP, A[9:0]

Input Address inputs: Provide the row address for ACTIVATE commands, and the column

address and auto precharge bit (A10) for READ/WRITE commands, to select one

location out of the memory array in the respective bank. A10 sampled during a

PRECHARGE command determines whether the PRECHARGE applies to one bank (A10

LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also pro-

vide the op-code during a LOAD MODE command. Address inputs are referenced to

REFCA

. A12/BC#: When enabled in the mode register (MR), A12 is sampled during READ

and WRITE commands to determine whether burst chop (on-the-fly) will be performed

(HIGH = BL8 or no burst chop, LOW = BC4). See Table 70 (page 116).

BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE,

or PRECHARGE command is being applied. BA[2:0] define which mode

are referenced to V

REFCA

CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals

are sampled on the crossing of the positive edge of CK and the negative edge of CK#.

Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#.

CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal

circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is de-

pendent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW

provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks idle),or

active power-down (row active in any bank). CKE is synchronous for

power-down entry and exit and for self refresh entry. CKE is asynchronous for self re-

fresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during

POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF RE-

FRESH. CKE is referenced to V

REFCA

CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the com-

mand decoder. All commands are masked when CS# is registered HIGH. CS#

provides for external rank selection on systems with multiple ranks. CS# is considered

part of the command code. CS# is referenced to V

REFCA

LDM Input Input data mask: LDM is a lower-byte, input mask signal for write data. Lower-byte

input data is masked when LDM is sampled HIGH along with the input data during a

write access. Although the LDM ball is input-only, the LDM loading is designed to

match that of the DQ and DQS balls. LDM is referenced to V

REFDQ

ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW)

termination resistance internal to the DDR3 SDRAM. When enabled in normal

operation, ODT is only applied to each of the following balls: DQ[15:0], LDQS, LDQS#,

UDQS, UDQS#, LDM, and UDM. The ODT input is ignored if disabled via the LOAD

MODE command. ODT is referenced to V

REFCA

RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command

being entered and are referenced to V

REFCA

RESET# Input Reset: RESET# is an active LOW CMOS input referenced to V

. The RESET# input re-

ceiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × V

and DC

LOW ≤ 0.2 × V

DDQ

. RESET# assertion and de-assertion are asynchronous.

2Gb: x4, x8, x16 DDR3 SDRAM

Ball Assignments and Descriptions

PDF: 09005aef826aaadc

2Gb_DDR3_SDRAM.pdf - Rev. S 02/16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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