10
UCD90320
ZHCSFI3B –AUGUST 2016–REVISED MAY 2019
www.ti.com.cn
Copyright © 2016–2019, Texas Instruments Incorporated
Electrical Characteristics (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
(7) PMBUS_CNTRL, PMBALERT, MARGIN19 and MARGIN20 pins have V
V33D
+ 0.3 V as maximum input voltage rating.
(8) I
O
specifications reflect the maximum current where the corresponding output voltage meets the V
OH
/V
OL
thresholds.
(9) If power-loss or brown-out event occurs during an EEPROM program or erase operation, and EEPROM needs to be repaired (which is a
rare case), the internal reset time may be longer.
F
CONV
ADC conversion rate (on each ADC
channel)
(1)
1 MSPS
N ADC resolution 12 bits
E
T
Total unadjusted error, over full input
rangea when using internal reference
±10 ±30
LSB
Total unadjusted error, over full input range
when using external reference
±2.5 ±4
DIGITAL INPUTS AND OUTPUTS (GPIO, Logic GPO, EN, AND MARGIN PINS)
V
IH
I/O high-level input voltage
(7)
0.65 ×
V
V33D
5.5 V
V
IL
I/O low-level input voltage 0
0.35 ×
V
V33D
V
V
HYS
I/O input hysteresis 0.2 V
V
OH
I/O high-level output voltage 2.4 V
V
OL
I/O low-level output voltage 0.4 V
I
OH
High-level source current V
OH
= 2.4 V
(8)
4 mA
I
OL
Low-level sink current V
OL
= 0.4 V
(8)
4 mA
RESET AND BROWNOUT
V33DSlew
Minimum V33D slew rate between 2.8 V
and 3.2 V
0.1 V/ms
V
RESET
Supply voltage at which device comes out
of reset
2 2.3 2.6 V
V
BOR
Supply voltage at which device enters
brownout
2.93 3.02 3.11 V
V
SHDN
Supply voltage at which device shuts down 2.7 2.78 2.87 V
t
RESET
Minimum low-pulse width needed at
RESET
pin
250 ns
t
IRT
Internal reset time
(9)
9 11.5 ms
7.6 Non-Volatile Memory Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CONFIGURATION FLASH MEMORY
PE
CYC
Number of program and erase
cycles before failure
100,000 Cycles
T
RET
Data retention –40°C ≤ T
J
≤ 85°C 20 Years
FAULT AND EVENT LOGGING EEPROM
EPE
CYC
Number of mass program and erase
cycles of a single word before failure
500,000 Cycles
ET
RET
Data retention –40°C ≤ T
J
≤ 85°C 20 Years
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