TI TPS7B770x-Q1 汽车级天线LDO电流检测技术规格
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"TI-TPS7B7701-Q1.pdf 是一款适用于汽车应用的单通道和双通道天线LDO稳压器的数据表。该器件满足AEC-Q100标准，具备电流检测和可调节限流功能，支持宽输入电压范围和负载突降保护。"
TI的TPS7B770x-Q1系列是一款专为汽车电子应用设计的低压降线性稳压器，它包含TPS7B7701-Q1和TPS7B7702-Q1两种型号。这些器件具备电流检测功能，可以用于监测天线的开路状态，并且具有可调节的限流设置，允许用户根据需求定制电流限制。该系列LDO能够处理广泛的输入电压，从4.5V到40V，并且在遇到负载突降时可提供45V的保护。
在功能特性方面，TPS7B770x-Q1可在-40°C至125°C的环境温度范围内稳定工作，符合AEC-Q100的温度等级1标准。同时，它们具有第二级人体放电模式(HBM)静电放电(ESD)防护和C4B等级的组件充电模式(CDM) ESD防护。此外，通过将反馈引脚(FB)连接到地(GND)，该LDO会进入电源开关模式，提供灵活的操作选项。
该稳压器的输出电压可调范围为1.5V至20V，每个通道的最大输出电流可达300mA。限流功能可以通过外部电阻进行调整，提供精确的电流控制。高精度的电流检测功能使得在低电流状态下也能有效地检测天线的开路状况，而无需额外的校准。电源抑制比(PSRR)在100Hz时的典型值为73dB，确保了输出电压的稳定性。另外，内置的反向极性保护功能在输入电压低至-40V时仍能有效工作，无需外部反向保护二极管。
在效率方面，当负载电流为100mA时，TPS7B770x-Q1的最大压降电压仅为500mV。这表明其在提供稳定输出电压的同时，保持了较高的效率。该器件兼容2.2μF到100μF之间（ESR范围为1mΩ到5Ω）的输出电容器，为设计提供了广泛的灵活性。
TI的TPS7B770x-Q1系列是汽车电子系统中理想的电源管理解决方案，尤其适合需要精确电流控制和高可靠性保护功能的天线电源应用场景。设计者应参考最新的英文数据表SLVSCE8以获取最新和最全面的技术信息。
6
TPS7B7701-Q1
,
TPS7B7702-Q1
ZHCSDQ2C –JANUARY 2015 –REVISED SEPTEMBER 2018
www.ti.com.cn
Copyright © 2015–2018, Texas Instruments Incorporated
Electrical Characteristics (continued)
at V
I
= 14 V and T
J
= –40º C to +150ºC (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
(3) The current-limit accuracy is maintained when the current limit is set between 50 mA and 300 mA, and it includes the deviation of the
current-limit threshold voltage V
(LIMx_th)
.
OUTx to SENSEx current ratio accuracy
I
O
= 100 to 300 mA –3% 3%
I
O
= 50 to 100 mA –5% 5%
I
O
= 10 to 50 mA –10% 10%
I
O
= 5 to 10 mA –20% 20%
I
O
/I
LIM
OUTx to LIMx current ratio (I
O
/ I
LIM
) V
I
= 4.5 V to 40 V, 50 mA ≤ I
(LIMx)
≤ 300 mA 198
I
(LIMx)
Programmable current-limit accuracy
(3)
V
I
= 4.5 V to 40 V, 50 mA ≤ I
(LIMx)
≤ 300 mA –8% 8%
I
L(LIMx)
Internal current-limit LIMx shorted to GND 340 550 mA
I
lkg
SENSE, SENSE1, SENSE2, LIM, LIM1,
and LIM2 leakage current
ENx = GND, T
A
= 25°C 2 µA
V
(LIMx_th)
Current-limit threshold voltage
Voltage on the LIM, LIM1, and LIM2 pins when
output current is limited
1.233 V
V
(SENSEx_stb)
Current-sense short-to-battery fault voltage
When short-to-battery or reverse current
conditions are detected
3.05 3.2 3.3 V
V
(SENSEx_tsd)
Current-sense thermal shutdown fault
voltage
When thermal shutdown is detected 2.7 2.85 3 V
V
(SENSEx_cl)
Current-sense current-limit fault voltage When current-limit conditions are detected 2.4 2.55 2.65 V
I
(SENSEx_H)
Current-sense fault condition current
When short-to-battery, reverse current, thermal
shutdown, or current-limit conditions are
detected
3.3 mA
FAULT DETECTION
V
(stb_th)
Short-to-battery threshold V
(OUTx)
– V
I
, checked during turnon sequence –500 –55 110 mV
I
(REV)
Reverse current detection level Power FET on (SW or LDO mode) –100 –40 –1 mA
T
SD
Thermal shutdown Junction temperature 175 °C
T
SD(hys)
Thermal shutdown hysteresis 15 °C
INTERFACE CIRCUITRY
V
OL
ERR output low I
(SINK)
= 5 mA 0.4 V
I
lkg
ERR open-drain leakage current
ERR high impedance, 5-V external voltage is
applied at ERR
1 µA
R
(OUTx-off)
OUT pulldown resistor
(2)
ENx = GND 50 kΩ
I
R(lkg)
Reverse leakage current –40 V < V
I
< 0 V, reverse current to IN 0.6 mA
V
CC
Internal voltage regulator V
I
= 5.5 to 40 V, I
CC
= 0 mA 4.25 4.5 4.75 V
I
CC(lim)
Internal voltage-regulator current-limit 15 70 mA
(1) Design information; specified by design; not production tested.
6.6 Switching Characteristics
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CURRENT SENSE AND CURRENT-LIMIT
t
d(SENSE_SEL_r)
Current-sense delay time from the rising edge
of SENSE_SEL
(1)
V
(ENx)
≥ 2 V, SENSE_EN = GND,
SENSE_SEL rise from 0 to 5 V
10 µs
t
d(SENSE_SEL_f)
Current-sense delay time from the falling edge
of SENSE_SEL
(1)
V
(ENx)
≥ 2 V, SENSE_EN = GND,
SENSE_SEL fall from 5 to 0 V
10 µs
t
d(SENSE_EN_r)
Current-sense delay time from rising edge of
SENSE_EN
(1)
V
(ENx)
≥ 2 V, SENSE_EN rise from 0 to
5 V
10 µs
t
d(SENSE_EN_f)
Current-sense delay time from falling edge of
SENSE_EN
(1)
V
(ENx)
≥ 2 V, SENSE_EN fall from 5 to
0 V
10 µs
FAULT DETECTION
t
(PD_RC)
Reverse current (Short-to-BAT) shutdown
deglitch time
Delay to shut down the switch or LDO
after a drop over r
on
becomes negative,
I
(OUTx)
= –200 mA (typical), T
A
= 25°C
5 20 µs
t
(BLK_RC)
Reverse current blanking time
Blanking time for reverse-current
detection after power up, the rising
edge of the ENx pin, or the current
limiting event is over
16 ms
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