Micron LPDDR4 SDRAM技术规格详解与特性概述

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本文档详细介绍了Micron LPDDR4 SDRAM规格，特别关注于MT53B系列的产品，如MT53B256M32D1、MT53B512M32D2和MT53B1024M32D4。LPDDR4是低功耗双倍数据速率内存，适用于对低电压、高速度和能效有高要求的应用场景。 1. **低功耗设计**：LPDDR4采用超低电压核心和I/O供电，标准工作电压范围为VDD1 = 1.70-1.95V（典型值1.8V），VDD2/VDDQ = 1.06-1.17V（典型值1.1V）。这显著降低了能耗，适合电池续航和绿色计算设备。 2. **频率范围**：内存运行在1866-10MHz，数据速率范围从3733-20Mb/s/引脚，提供了灵活的时钟选择。 3. **架构与并行性**：基于16n预取的DDR架构，每个通道分为两个部分，旨在降低读写能量和平均延迟。每通道有8个内部银行，支持多任务并发操作。 4. **命令和地址入口**：单数据率CMD/ADR接口简化了命令发送，提高了效率。 5. **数据传输**：每个数据线支持双向/差分数据脉冲，允许每个数据位进行双向传输，增强了数据传输的稳定性和性能。 6. **可编程特性**：包括可编程的读写延迟（RL/WL）、突发长度（BL）以及银行定向刷新，有助于优化指令调度和提高性能。 7. **高速度和容量**：单颗芯片可提供高达15.0GB/s的传输速率，通过两个通道实现，每通道最大7.5GB/s。 8. **温度控制**：内置的温度传感器可以自动调整自我刷新速率，确保内存在高温下仍能保持稳定。 9. **节能模式**：支持部分数组自刷新（PASR），在无需连续访问的情况下降低功耗。 10. **输出驱动强度选择**：提供可编程输出驱动强度（DS），根据应用需求调整信号强度。 11. **停时功能**：具备时钟停止能力，进一步节省功耗。 12. **合规性和包装**：产品符合RoHS标准，采用环保包装，注重可持续性。 13. **选项标记**：文档中提及的特定选项，如VDD1/VDD2为1.8V/1.1V，以及不同的阵列配置，如256M×32和512M×32，对应不同的存储容量。 Micron LPDDR4 SDRAM以其高性能、低功耗和灵活的特性，成为现代电子设备中不可或缺的内存解决方案，广泛应用于移动设备、数据中心服务器和其他需要高效能存储的领域。

Table 206: MR17 PASR Segment Mask ........................................................................................................... 273

Table 207: MR22 Register Information (MA[5:0] = 16h) ................................................................................... 274

Table 208: MR22 Register Information ........................................................................................................... 274

Table 209: Command Bus ODT State ............................................................................................................. 275

Table 210: Command Bus Training Steps ....................................................................................................... 278

Table 211: Mapping of CA Input Pin and DQ Output Pin ................................................................................ 280

Table 212: Invert Mask Assignments .............................................................................................................. 283

Table 213: Read DQ Calibration Training Output ........................................................................................... 284

Table 214: Core AC Timing ............................................................................................................................ 285

Table 215: CBT AC Timing for Mode 1 ........................................................................................................... 285

Micron Confidential and Proprietary

200b: x32 LPDDR4 SDRAM

Features

CCMTD-554574167-10482

200b_z01m_sdp_ddp_qdp_embedded_lpddr4.pdf – Rev. C 7/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Important Notes and Warnings

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including without limitation specifications and product descriptions. This document supersedes and replaces all

information supplied prior to the publication hereof. You may not rely on any information set forth in this docu-

ment if you obtain the product described herein from any unauthorized distributor or other source not authorized

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General Description

The 8Gb mobile low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS, dynamic

random-access memory. The device is internally configured with 2 channels x16 I/O

and 2 channels x8 I/O, each channel having 8-banks.

Micron Confidential and Proprietary

200b: x32 LPDDR4 SDRAM

Important Notes and Warnings

CCMTD-554574167-10482

200b_z01m_sdp_ddp_qdp_embedded_lpddr4.pdf – Rev. C 7/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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