油溶性In2O3纳米颗粒与In2O3-SnO2纳米复合材料的制备及薄膜研究
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"这篇2015年的论文发表在《国际矿物、冶金与材料期刊》上，由李平王、徐旭东和王嘉翔等人撰写，研究了油溶性In2O3纳米颗粒和In2O3-SnO2纳米复合材料的制备以及它们的煅烧薄膜的特性。通过金属醋酸盐前体在油胺中的分解方法成功制得了这些纳米材料，并采用旋涂工艺将溶液涂覆到基底上，然后进行煅烧处理，形成In2O3和In2O3-SnO2薄膜。通过透射电子显微光谱、扫描电子显微光谱和原子力显微镜等技术对材料进行了表征。"
本文的研究重点在于油溶性In2O3纳米颗粒和In2O3-SnO2纳米复合材料的制备工艺及其薄膜的性质。首先，作者利用金属醋酸盐前体在油胺介质中进行分解，这是一种创新的合成策略，使得纳米颗粒能够在非水体系中稳定存在，扩大了纳米材料的应用范围。油胺的选择可能是因为其良好的溶解性和对纳米颗粒的表面包覆能力，可以防止颗粒聚集，确保纳米粒子尺寸的均匀性。
其次，通过旋涂技术将油溶性纳米颗粒溶液均匀地涂覆在基底上，旋涂法是一种广泛用于制备薄膜的技术，它能控制薄膜的厚度和均匀性。随后的煅烧过程是转化和固化纳米材料的关键步骤，通过高温处理，可以去除有机配体，促进无机结构的形成，进一步改善材料的电学和光学性能。
在材料的表征方面，透射电子显微光谱(TEM)提供了关于纳米颗粒大小、形状和内部结构的详细信息，而扫描电子显微光谱(SEM)则用于观察薄膜的表面形态和微观结构。原子力显微镜(AFM)用于分析薄膜的表面粗糙度和纳米级的三维形貌。这些表征技术的结合使用，能够全面理解材料的微观结构与性能之间的关系。
In2O3和In2O3-SnO2纳米复合材料因其独特的物理化学性质，如高透明导电性、优良的热稳定性以及对环境的耐受性，常被应用于太阳能电池、触摸屏和传感器等领域。In2O3-SnO2纳米复合材料尤其具有优势，因为SnO2的掺入可以调整In2O3的能带结构，优化其光电性能，提高器件的整体性能。
该研究不仅贡献了In2O3纳米颗粒和In2O3-SnO2纳米复合材料的新制备方法，还通过系统的表征揭示了材料的微结构与性能，对于理解和改进这些材料在能源和电子设备中的应用具有重要意义。
International Journal of Minerals, Metallurgy and Materials
Volume 22, Number 5, May 2015, Page 543
DOI: 10.1007/s12613-015-1105-z
Corresponding author: Li-ping Wang E-mail: lpwang@mater.ustb.edu.cn
© The Author(s) 2015. This article is published with open access at SpringerLink.com
Preparation and characterization of oil-soluble In
2
O
3
nanoparticles and
In
2
O
3
–SnO
2
nanocomposites and their calcined thin films
Li-ping Wang, Xu-dong Xu, and Jia-xing Wang
Department of Materials Physics and Chemistry, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
(Received: 25 October 2014; revised: 5 March 2015; accepted: 6 March 2015)
Abstract: Oil-soluble In
2
O
3
nanoparticles and In
2
O
3
–SnO
2
nanocomposites were prepared in oleylamine via decomposition of metal acety-
lacetonate precursors. Thin films of In
2
O
3
and In
2
O
3
–SnO
2
were obtained by spin-coating solutions of the oil-soluble In
2
O
3
nanoparticles and
In
2
O
3
–SnO
2
nanocomposites onto substrates and then calcining them. Transmission electron microspectroscopy, scanning electron mi-
crospectroscopy, atomic force microspectroscopy, X-ray diffraction, ultraviolet–visible absorption, and photoluminescence spectroscopy
were used to investigate the properties of the nanoparticles and thin films. The In
2
O
3
nanoparticles were cubic-phased spheres with a diame-
ter of ~8 nm; their spectra exhibited a broad emission peak centered at 348 nm. The In
2
O
3
–SnO
2
nanocomposites were co-particles composed
of smaller In
2
O
3
particles and larger SnO
2
particles; their spectra exhibited a broad emission peak at 355 nm. After the In
2
O
3
–SnO
2
nano-
composites were calcined at 400°C, the obtained thin films were highly transparent and conductive, with a thickness of 30–40 nm; the sur-
faces of the thin films were smooth and crack-free.
Keywords: indium trioxide; tin dioxide; nanoparticles; nanocomposites; thin films; calcination
1. Introduction
In
2
O
3
is an important n-type transparent semiconductor
with a wide band gap (3.5–3.7 eV); it is widely used in solar
cells, optoelectronic devices, and gas sensors [1–4]. Differ-
ent phase structures, morphologies, and sizes of In
2
O
3
nanostructures can result in property variations. For instance,
the cubic phase of In
2
O
3
, which is one of the two crystal
structures of In
2
O
3
, usually exhibits high electrical conduc-
tivity [5]. As another example, the gas-sensing ability of
In
2
O
3
can increase dramatically with decreasing particle size
[6]. Hence, numerous investigations which are focused on
the phase, morphology, and size control of In
2
O
3
have been
reported [7–8].
The properties of In
2
O
3
can also be tuned by adding an-
other semiconductor component to form indium-based bi-
nary semiconductors as either doped nanoparticles or nano-
composites. On the one hand, as an important n-type semi-
conductor for gas sensing [9], SnO
2
is a good dopant candi-
date [10]. The doping of Sn into In
2
O
3
is a promising way to
improve the properties of In
2
O
3
, including its conducting
and sensing characteristics [11]. Sn-doped In
2
O
3
is an out-
standing transparent conducting oxide material with various
applications; it has been used as a transparent electrode ma-
terial in flat panel displays, light-emitting diodes, solar cells,
and sensors, and has been studied extensively [12–14]. On
the other hand, In
2
O
3
–SnO
2
nanocomposites exhibit superior
sensing properties, showing improved selectivity and sensi-
tivity for different toxic gases [15]. However, the literature
contains relatively few reports focused on the In
2
O
3
–SnO
2
nanocomposite system and further investigation is still needed.
In various applications, In
2
O
3
and In-based binary semi-
conductors are used in the form of thin films. For instance,
the properties of Sn-doped In
2
O
3
films rely primarily on the
preparation parameters of the films, such as their thickness
and particle size. Thin-film and thick-film devices respond
mainly to oxidizing and reducing gases, respectively [16].
Thin films can be prepared directly by various deposition
techniques, including pulsed laser deposition [17], magne-
tron sputtering [18], spray pyrolysis [19], and chemical va-
por deposition (CVD) [20]. Recently, film preparation by
means of previously obtained nanoparticles using solution
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