LabVIEW引导的模拟电子实验教程与SPICE应用

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《利用LabVIEW进行模拟电子》是一本旨在为学生提供系统学习模拟电子学的教材，无论是作为独立课程还是作为全面本科课程的补充，这本书都具有很高的实用价值。作者Kenneth L. Ashley强调了理论与实践的紧密结合，实验室项目完全基于计算机数据采集技术，遵循循序渐进的教学方法。本书的核心内容围绕LabVIEW编程工具展开，读者将学习如何通过该软件来进行设备特性分析，所有的电路设计和实验分析都是基于SPICE（Simulation Program with Integrated Circuit Emphasis）仿真平台，这是一款广泛应用于电子电路设计中的电路模拟器。SPICE能够帮助读者深入理解各种电子元件的工作原理，如电阻、电容、晶体管等，并且通过计算机模拟进行精确的性能评估。版权信息部分详细列出了图书在国会图书馆的登记情况，包括ISBN号、出版商Pearson Education的标识以及系列名称National Instruments Virtual Instrumentation Series。此外，书籍包含了目录、参考文献和索引，以确保内容的完整性。编辑和生产管理由Patti Guerrieri负责，封面设计由Jerry Votta和Nina Scuderi共同完成，而制造管理则由Alexis R. Heydt-Long担纲。本书的出版人是Bernard Goodwin，市场经理则是Dan DePasquale。版权信息还提到了Pearson Education的联系方式，供有兴趣的企业或政府机构寻求批量购买折扣。《Analog Electronics with LabVIEW》是一本结合理论与实践操作，以LabVIEW为教学工具的现代模拟电子学教材，适合电子工程专业的学生和工程师使用，特别是那些希望提升电路设计和数据分析能力的学习者。通过本书，读者不仅能掌握基本的模拟电路原理，还能掌握如何有效地将这些知识应用于实际硬件设计项目中。

sufficient range of frequency, the effects may be considered separately, as suggested in Fig.

1.4.

The response function is obtained by considering the frequency dependence of the node

voltage V

(f) for the constant-magnitude sine-wave source voltage, V

sig

. (Since the only

voltages under consideration in the circuits of Fig. 1.4 are those associated with signals,

lowercase subscript is used. This is discussed further in Unit 2.)

The frequency response is first considered for the low end of the spectrum and involves C

only, as in the circuit of Fig. 1.4(a). We can utilize the voltage-divider relation obtained above

as (1.2). For this case this is

Equation 1.5

where R

= R

|| R

Using the definitions

Equation 1.6

and

Equation 1.7

the result is condensable to

Equation 1.8

The magnitude is

Equation 1.9

Unit 2. Transistors and Voltage

Amplification

Radio transmitters and receivers have existed since before the end of the nineteenth century.

A practical form of wireless telegraph, attributed to G. Marconi, appeared in 1895, and

successful transmission across the Atlantic Ocean was achieved in 1901. However, in the early

part of the twentieth century, systems were limited by the lack of a means of voltage

amplification. The appearance of a voltage amplification device, the vacuum tube, dramatically

improved the concept, as microvolt signals could be boosted for receiving and transmitting.

In the middle of the twentieth century, the transistor appeared. The idea of transistors based

on a sandwich of pn junctions (BJT) and a field-effect transistor based on pn junctions (JFET)

and on a metal – oxide – semiconductor (MOS) structure (basically, a capacitor) were all

understood at the time. However, pn-junction devices became a practical realization much

sooner than the MOS structure, due to fabrication complications in producing the MOS device

as well as perhaps a perceived lack of need. The JFET served as an interim field-effect

transistor until the MOS technology evolved. It provided for a transistor with very high input

resistance and was used extensively as the input transistors for BJT opamps.

A textbook on radio, Elements of Radio, published in 1948 (Marcus and Marcus, 1948), makes

no mention of transistors. A 1958 text, (Millman, 1958), Vacuum-Tube and Semiconductor

Electronics, gives equal weight to vacuum tubes and BJTs in electronic circuits but makes no

mention of the field-effect transistor. Slightly later (Nanavati, 1963), in An Introduction to

Semiconductor Electronics, as the title suggests, vacuum tubes are dropped completely and

the only reference to a field-effect transistor is in one section of the last chapter and this refers

to a junction field-effect transistor. In 1965, in his textbook Analysis and Design of Electronic

Circuits, Chirlian devotes a small portion of the book to vacuum tubes, but most of the

emphasis is on circuits based on the BJT (Chirlian, 1965). No mention is made of the field-

effect-transistor. An example of a book in which BJTs and field-effect transistors of both types

were finally given balanced treatment was published in 1979 (Millman, 1979). Textbooks tend

to lag the industry a bit, and during the 1970s, MOSFET circuits were emerging rapidly, driven

by the simultaneous development of integrated circuits. The four editions of a text on analog

circuits by Gray and Meyer, (1977, 1984, 1993) and Gray, et al. (2001) serve well as a series

through which we observe a transition from mostly BJT to, in the last two editions, more-or-

less equal treatment of BJT and MOSFET devices. A recent textbook on the subject of analog

integrated circuits (Johns and Martin, 1997) takes the approach that such circuits are now

totally dominated by MOSFETS but includes some BJT applications. BiCMOS, a combination of

MOSFET and BJT devices on the same integrated circuit, is growing in popularity as more ways

of taking advantage of the superior properties of the two transistor types are developed.

Since the earliest transistors, there has been persistent competition between BJT and MOS

transistors. It has been, to a large extent (along with many other considerations), a matter of

power consumption versus speed; the BJT has been faster but is associated with high power

consumption. The MOSFET has gradually taken over as the most important transistor, with

increased emphasis on integrated circuits and improved speeds.

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