碳氮异质结中锯齿状石墨烯的巨磁阻与自旋过滤效应

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本文研究了基于锯齿状石墨烯和六角硼氮化物（h-BN）的异质结在巨磁电阻（Giant Magnetoresistance, GMR）和自旋过滤效应中的电子传输特性。GMR是一种重要的现象，它在磁场作用下，由于电子在不同磁化层之间的传播受到显著影响，导致电阻率的巨大变化，通常在磁性多层结构中观察到。自旋过滤效应则是指在某些材料体系中，电子的自旋态在传输过程中受到选择性地抑制或增强，只允许特定自旋方向的电子通过。在该研究中，作者Can Cao、Meng-qiu Long、Xiao-jiao Zhang和Xian-cheng Mao探讨了这种特殊的二维材料组合下的电子输运行为。他们关注的是裸露的锯齿状石墨烯纳米结构与h-BN形成的异质结，这可能因为锯齿状石墨烯的边缘态和h-BN的高稳定性而展现出独特的电子特性。锯齿状石墨烯因其特殊的边沿结构，不同于传统的石墨烯，可能提供更多的磁敏感性，而h-BN作为优良的绝缘体，可以作为有效的电荷隔离层。文章的研究过程可能包括了理论计算和实验测量，通过模拟和实验证明了在磁场的作用下，这种异质结能表现出显著的磁阻效应，即在不同的磁场强度下，电流的传输会发生明显的变化。同时，他们还探索了可能存在的自旋依赖的输运性质，即自旋-polarized电流在异质结中的传输路径和效率。此外，他们可能还研究了这种结构的“rectifying effect”，即在非线性条件下，电流流过时会偏向于正向偏置还是负向偏置，这对于设计新型磁性电子器件具有潜在的应用价值，如磁敏传感器、自旋电子器件等。该研究发表在《物理学报A》上，接收日期为2015年1月2日，修订稿完成于3月24日，最终接受3月31日，并于4月2日在线发布。通信编辑是R.Wu。关键词包括电子传输性质、异质结、巨磁电阻、自旋过滤效应以及可能的整流效应。这些研究结果不仅对于理解石墨烯和h-BN异质结的物理性质有重要贡献，也为开发新型磁性、自旋tronics设备提供了理论基础。

Physics Letters A 379 (2015) 1527–1531

Contents lists available at ScienceDirect

Physics Letters A

www.elsevier.com/locate/pla

Giant magnetoresistance and spin-ﬁltering effects in zigzag graphene

and hexagonal boron nitride based heterojunction

Can Cao

a,b

, Meng-qiu Long

b,c,∗

, Xiao-jiao Zhang

, Xian-cheng Mao

a,∗∗

School of Geosciences and Info-Physics, Central South University, Changsha 410083, China

Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha 410083,

China

Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China

a r t i c l e i n f o a b s t r a c t

Article history:

Received

2 January 2015

Received

in revised form 24 March 2015

Accepted

31 March 2015

Available

online 2 April 2015

Communicated

by R. Wu

Keywords:

Electronic

transport property

Heterojunction

Giant

magnetoresistance

Spin-ﬁltering

effect

Rectifying

effect

The spin-dependent electronic transport properties of heterojunction constructed by bare zigzag graphene

nanoribbon and hexagonal boron nitride nanoribbon are investigated by the non-equilibrium Green’s

function method in combination with the density functional theory. The results show that the giant

magnetoresistance effect can be realized in the heterojunction, and the magnetoresistance ratio can reach

to 10

. Moreover, it is found that the heterojunction is a good spin-ﬁltering device with nearly 100% spin

ﬁltering eﬃciency at a wide bias voltage region in both ferromagnetic and antiferromagnetic magnetic

conﬁgurations.

1. Introduction

Graphene, a two-dimensional Catom with hexagonal crystal

symmetry, has tremendous interest in potential applications in

nano-electronics [1–7]. Meanwhile, researchers began to focus on

other emerging two-dimensional (2D) materials, such as, hexago-

nal

boron nitride (h-BN) [8], molybdenum disulphide (MoS

) [9],

and silicon/germanium 2D sheets [10]. Electrons in these 2D ma-

terials

also behave like massless and massive Dirac fermions [11],

and display unique transport properties [12,13]. However, com-

pared

to this explosive research of individual 2D materials, the

hybrid nanostructures composed of different types of 2D mate-

rials

could provide us a new route to engineering the band gap

and spin-relevant properties of nano-materials [14], which is be-

coming

an essential part in electronics. The lateral heterostructure

based on graphene and h-BN has attracted much attention since

graphene is a gapless semi-metal whereas an atomically thin layer

of h-BN is a dielectric with a wide bandgap of 5.9 eV [15]. If the

precise two-dimensional domains of graphene and h-BN can be

Corresponding author at: Institute of Super-microstructure and Ultrafast Process

in Advanced Materials, School of Physics and Electronics, Central South University,

Changsha 410083, China.

Corresponding author.

E-mail

addresses: mqlong@csu.edu.cn (M.-q. Long), mxc@csu.edu.cn (X.-c. Mao).

seamlessly stitched together, hybrid atomic layers with interest-

ing

electronic applications could be created [16–18]. By growing

graphene in lithographically patterned h-BN atomic layers, Liu et

al. succeed in building in-plane graphene/h-BN atomic layer with

controlled domain shapes at larger sizes (millimeter range) [19].

Gao et al. have successfully grown a perfect single-layer h-BN-

graphene

(BNC) patchwork on a selected Rh(111) substrate and

convinced that at the in-plane linking interface, graphene and

h-BN can be linked perfectly at an atomic scale [20]. At the same

time, the signiﬁcant advances of theoretical simulations on the hy-

bridized

in-plane heterostructures of graphene and h-BN have also

been performed on the computer [21].

Due

to sensitivity of the electronic properties to the details of

the edge shapes of graphene [22] and h-BN, a few of works fo-

cused

on the hybrid atomic layers of graphene nanoribbons (GNRs)

and h-BN nanoribbons (BNNRs) [23–27]. Seol et al. [28] studied the

electronic properties of armchair graphene nanoribbons (AGNRs)

conﬁned by h-BN nanoribbons (BNNRs) and found the AGNRs con-

ﬁned

by BNNRs exhibit a considerable bandgap. Chen et al. [29]

investigated

a hybridized structure constructed by a zigzag boron

nitride nanoribbon (ZBNNR) and a zigzag graphene nanoribbon

(ZGNR) and found the band gap of the hybridized structure can

be tuned from insulator to metal by changing the unit number of

ZGNR. However, up to now, very few attempts have been made to

excavate the mechanism of ZBNNR/ZGNR heterojunction at ﬁnite

bias voltage. Moreover, the edge modulations, such as dehydro-

http://dx.doi.org/10.1016/j.physleta.2015.03.036

0375-9601/

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