带隙基准源技术与应用

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"带隙基准源是集成电路设计中的一个重要组成部分，尤其在精密模拟电路和数字电路中起到关键的基准电压产生作用。带隙基准源利用半导体材料的带隙特性，生成一个基本恒定的电压，不受温度变化影响，从而提供稳定的电路工作条件。这种技术在各种应用中，如微处理器、传感器接口、数据转换器和电源管理芯片等都有广泛的应用。带隙基准源的基本原理是结合两种不同的物理效应：电子和空穴的带隙能量与温度有关，而热载流子效应与温度成正比。通过设计特定的电路结构，可以使得这两个效应相互抵消，生成一个近似与温度无关的电压。在实际电路中，通常会使用BJT（双极型晶体管）或MOSFET（金属氧化物半导体场效应晶体管）来实现这种带隙电路。文章提到了James D. Beasom的工作，他在Harris Semiconductor公司参与了带隙基准源的研究和开发。他研究了热氧化层并开发了用于制造n沟道和p沟道MOSFET的工艺。后来，他专注于电路设计，特别是辐射硬化数字电路，并在设备组中进行了线性p-n-p设计以及互补半导体器件工艺的开发。他的工作涵盖了从基础半导体工艺到硬化的TTL器件设计，以及采用这些工艺的线性和数字电路的设计，其中带隙基准源是核心部分。带隙基准源的设计通常包括几个关键步骤：首先，设计一个带隙电压发生器，它可能包括一个温度补偿电路，以减少温度对电压的影响；其次，设计一个低噪声放大器，以稳定输出电压并提高电路的精度；最后，为了确保整个系统的稳定性，还需要考虑电源抑制比（PSRR）和输出阻抗等因素。在实际应用中，带隙基准源可能会面临一些挑战，例如温度漂移、电源波动和工艺变化。因此，工程师需要不断优化电路设计，采用先进的工艺技术和创新的补偿策略，以提高基准源的性能和稳定性。随着半导体技术的不断发展，带隙基准源的设计也在持续演进，以满足更高精度、更低功耗和更宽工作温度范围的需求。带隙基准源是电子工程中的关键技术，它为系统提供了可靠的电压参考，是许多精密电路不可或缺的一部分。James D. Beasom的工作展示了在这一领域的深入研究和实践经验，对于理解和改进带隙基准源的设计具有重要参考价值。"

1076

IEEE JOURNAL OF SOLID-STATECIRCUITS, VOL. SC-15, NO. 6, DECEMBER 1980

James D. Beasom received the B.S. (with dis-

tinction) in engirieering science from Permsyl-

vania State University, University Park, and the

M.S. in electrical engineering from the Univer-

sity of Michigan, Ann Arbor.

He joined Harris Semiconductor in July 1966

as a Senior Engineer assigned to a process and

device development group. While a member of

that group, he studied thermal oxides and

developed processes for the fabrication of

n-channel and p-channel MOSFET’S. Subse-

quently, he joined the Product En@eering Group as a Circuit Engineel

working on the development of three custom, radiation-hardened

digital circuits. Later, he transferred to the Device Group of the

Engineering Department, His assignments in that group included linear

p-n-p design; development of complementary finear device processes;

development of processes for the fabrication of n-p-n’s and FET’s in a

monolithic substrate; design of hardened TTL devices; and develop-

ment of a. number of linear and digital circuits employing these pro-

cesses, Currently, he is the Manager of the Analog Technology Depart-

ment. He directs and participates in the design and development of

new linear devices and processes. His group is responsible for the initial

device design and process development for rdl Harris Semiconductor

linear circuits. It is also responsible for pilot wafer fabrication of these

products to prove yields and reliability before they are released for

production. He is currently developing processes for the fabrication of

high-frequency and high-current complementary linear devices and the

fabrication of complementary bipolars and FET’s in a monolithic

substrate.

He is also developing a GHz frequency range MOS IC pro-

cess. His patents include: an improved tield effect transistor, a process

for simultaneous fabrication of n-p-n’s, p-n-p’s, and MOS devices, a pro-

cess for forming buried layers to reduce collector resistance in top

contact transistors, and an improved semiconductor device (quasi-

vertical transistor).

Accurate Analysis of Temperature Effects in /c-l/BE

Characteristics with Application to Bandgap

Reference Sources

YANNIS P. TSIVIDIS, MEMBER,lEEE

Abstract–The inaccuracy of the analyses commonly used for predict-

ing the temperature behavior of the Ic- V~ characteristics of transis-

tors and the output of bandgap reference sources is pointed out. The

problem is traced to a basic assumption implicit, in such analyses,

namely that the variation of the bandgap voltage of silicon with tem-

perature is Iinear; this assumption is shown to be of poor accuracy.

By taking into account the nonlinearity in this variation, new accurate

formulas tire derived. Both the previous analyses and the proposed

analysis tie compared to experiment; a valuable improvement is dem.

onstrated.

Equations which should prove of vake in the design of

bandgap reference sources and bipolar transistor temperature trans-

ducers are given. H@her order effects are discussed.

INTRODUCTION

N accurate evaluation of the temperature effects in lC-

VBE

characteristics is needed in the design of bandgap

reference sources and temperature transducers implemented in

Manuscript received April 8, 1980; revised June 16, 1980.

bipolar technology [1] - [8], Bandgap reference sources are

extensively used in A/D and D/A converters, voltage regulators,

and measurement systems; temperature transducers find appli-

cations in instrumentation and measurement.

In the equations usually found in the literature for the tem-

perature dependence of lC-VBE characteristics and the output

of bandgap reference sources [2]- [4], [7], [9]-[11 ], two

parameters appear: the extrapolated bandgap voltage of silicon

to O K, and a process-dependent parameter denoted by ~ [3],

[11 ] or a variety of other symbols. It is found that when the

values expected from physics are used for these parameters,

the equations do not agree with measurements [3], [7],

[11 ]- [16]; for this reason, fictitious values are often used for

these parameters in an attempt to make the equations fit the

experimental data.

In this paper, it will be shown that the above discrepancies

between theory and experiment are due to an assumption

which, explicitly or implicitly, is made in the derivation of the

The author is with the Department of Electrical Engineering and

. . . . .

Computer Science, Massachusetts Institute of Technology, Cambridge,

equations used: that the variation of

the bandgap voltage of

MA 02139, on leave from the Department of Electrical Engineering,

silicon with temperature

Columbia University, New York, NY 10027.

shown to be not justified

is linear. This assumption will be

for the level of accuracy commonly

0018-9200/80/1200 -1076$00.75 @ 1980 IEEE

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