双电子路径增强p-LDMOS电流能力的模拟研究

194 浏览量更新于2024-08-31 收藏 1.41MB PDF 举报

"Simulation Study of a p-LDMOS With Double Electron Paths to Enhance Current Capability" 这篇论文介绍了一种创新的p通道侧向双扩散MOSFET（p-LDMOS）设计，旨在通过双重电子路径来增强其电流能力。传统的p-LDMOS在高功率应用中可能遇到电流承载能力的限制，而该提案提出的新结构则有望解决这一问题。在传统的p-LDMOS中，电流通过一个单一的n沟道流动。然而，文中提出的p-LDMOS采用了一个独特的设计，它包含了两个由自动产生的电压信号VGn控制的n沟道。这个VGn电压信号是在p基区集成的电阻Rp上的孔电流的ON和OFF状态期间生成的。这种设计使得在不引入导电性调制效应的情况下，p-LDMOS的电流能力显著增强。 VGn的作用是关键，它有效地创建了双重电子路径，这允许更多的电流流过器件，从而提高其电流承载能力。通过这种方式，p-LDMOS的性能可以与采用n型三重RESURF（Reduced Surface Field）技术的器件相媲美，而三重RESURF技术是一种广泛用于增强MOSFET器件击穿电压和电流密度的技术。论文中的仿真结果显示，提出的p-LDMOS在额定负载电流密度为25μA/μm时，其电流能力与n-LDMOS相比有了显著提升，并且与采用三重RESURF技术的p-LDMOS相比，功率损失减少了约78.6%，这表明新设计在效率上具有显著优势。此外，由于没有导电性调制效应，这意味着新结构的p-LDMOS在工作时可能具有更好的稳定性，降低了热耗散和潜在的故障风险。关键词包括：p-LDMOS、电流能力、自动控制、三重RESURF以及功率损耗。这些关键词突出了研究的核心内容，即通过优化p-LDMOS的结构和工作机制，实现了更高的电流承载能力和更低的功率损耗，这对于高功率电子设备的设计和优化至关重要。这项研究为p-LDMOS的改进提供了一种新的策略，通过双重电子路径增强了其电流能力，同时减少了功率损失。这种创新设计不仅提高了器件的性能，还可能为未来功率半导体器件的发展开辟新的途径。

1700 IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 11, NOVEMBER 2018

Simulation Study of a p-LDMOS With Double

Electron Paths to Enhance Current Capability

Bo Yi , Moufu Kong , and Junji Cheng

Abstract

— In this letter, a p-channel lateral double-

diffused MOSFET (p-LDMOS) with double electron paths

used to enhance the current capability is proposed. The

proposed p-LDMOS has two n-channels that are controlled

by an auto-generated voltage signal (

). The voltage

signal

is generated during the ON and OFF states of the

hole current that ﬂows across an integrated resistor (R

)

implemented in the P-base region. Thus, the current capa-

bility of the p-LDMOS can be signiﬁcantly enhanced by

the introduced electron current. The simulation results

show that the current capability of the proposed p-LDMOS

can be comparable to that of the n-type triple RESURF

technique without any conductivity modulation effect. The

power loss of the proposed p-LDMOS is reduced by approx-

imately 78.6% and 15.6% compared with the triple RESURF

p-LDMOS and n-LDMOS, respectively,at a rated load current

density of 25 µA/µm.

Index Terms

— p-LDMOS, current capability, auto-

controlled, triple RESURF, power loss.

I. INTRODUCTION

-CHANNEL Lateral Double-diffused MOSFET

(p-LDMOS) is highly suitable for smart power integrated

circuits (SPIC) [1]–[4], especially for full complementary

high-voltage driver ICs [3], [4]. However, due to the low hole

mobility, the chip area of a p-LDMOS is usually about three

times larger than that of an n-LDMOS with the same current

capability. This also leads to impedance mismatching [2].

To improve the current capability of p-LDMOS, the layout

and ﬁeld plate optimization are investigated in [5] and [6].

The super-junction solution [7] and the accumulation layer

solution [8], [9] have been proposed to improve the current

capability. However, these approaches are all restricted by

the low hole mobility, making it difﬁcult to compete with

the n-LDMOS. Additionally, some of these approaches even

compromise the dynamic performance due to large gate

charges [9]. To overcome the intrinsic shortcomings of the

p-LDMOS, p-LDMOS devices with electron conductive paths

have been proposed [10], [11]. However, the methods used

in [10] and [11] need several extra controlling circuits and

Manuscript received June 26, 2018; revised August 3, 2018 and

August 31, 2018; accepted September 12, 2018. Date of publication

September 17, 2018; date of current version October 23, 2018. This

work was supported in part by the National Natural Science Foundation

of China under Grant 61804021 and Grant 61504021 and in part by the

Open Foundation of State Key Laboratory of Electronic Thin Films and

Integrated Devices under Grant KFJJ201708. The review of this letter

was arranged by Editor W. T. Ng.

(Corresponding author: Bo Yi.)

The authors are with the State Key Laboratory of Electronic Thin Films

and Integrated Devices, University of Electronic Science and Technology

of China, Chengdu 610054, China (e-mail: yb@uestc.edu.cn).

Color versions of one or more of the ﬁgures in this letter are available

online at http://ieeexplore.ieee.org.

Digital Object Identiﬁer 10.1109/LED.2018.2870582

Fig. 1. (a) The proposed p-LDMOS and (b) sectional view along AA



components, increasing the design difﬁculty and cost. In this

letter, a novel p-LDMOS with an auto-controlled n-channel is

proposed and investigated by TCAD simulation. The current

capability of the proposed p-LDMOS can be much larger

than that of the triple RESURF p-LDMOS (TR p-LDMOS)

and is comparable to that of the triple RESURF n-LDMOS

(TR n-LDMOS) without any conductivity modulation effect.

II. S

TRUCTURE AND MECHANISM

OF THE

PROPOSED P-LDMOS

Fig. 1(a) shows the proposed p-LDMOS based on the triple

RESURF technique. The p-LDMOS cell consists of a signal

region in which a signal voltage (V

) is generated to control

the n-channel and a main current region that is used to conduct

the main load current as shown in Fig. 1(a). Fig. 1(b) shows the

sectional view along AA



in Fig. 1(a). When the p-channel is

turned on, the hole current (current path 1) in the signal region

ﬂows across an integrated resistor (R

) in the P-base region

and eventually into electrode D. The voltage signal (V

) is

auto-generated across R

. V

serves as the gate voltage of

the n-channel to realize the auto-turn-on and auto-turn-off of

the n-channel. As a result, the p-LDMOS utilizes not only the

hole current (shown as current path 1 in Figs. 1(a) and 1(b))

but also two additional electron current paths (shown as current

paths 2 and 3 in the main current region) to conduct the

current. Therefore, the current capability of the p-LDMOS can

be signiﬁcantly improved.

A deep trench isolation is also formed between the signal

region and the main current region to isolate the P

region in

the signal region from both the N-epi and N-top regions in the

See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.

下载后可阅读完整内容，剩余3页未读，立即下载

weixin_38600696

粉丝: 6
资源: 967

双电子路径增强p-LDMOS电流能力的模拟研究

Monte Carlo simulation study of quasi-elastic electron scattering from an overlayer/substrate system

prosys-opc-ua-simulation-server-windows-x64-5.4.6-148.exe

Simulation study of broadband long-pulsed amplification in high-power laser systems

Simulation study on an improved frequency-doubled triangular-shaped pulse train generator with reduced harmonic distortion

SIMULATION-OF-SINGLE-PHASE-SEMI-CONVERTER.rar_SINGLE PHASE _sing

MODELLING-AND-SIMULATION-OF-JAMMING-ATTACKS-IN-WL_Windows编程_PDF_

simulation-of-the-PV-array.rar_pv array 仿真_pv simulation_pv simu

Simulation-of-Gray-Hole-Attack-in-Adhoc-Network-U_单片机开发_PDF_

Simulation-of-Greenhouse-Climate-Monitoring-and-C_软件设计/软件工程_matlab_

Matlab-Simulation-of-Induction-Motor.zip_MOTOR INDUCTION_inducti

最新资源