三星2Gb DDR2 SDRAM K4T2G044QA芯片技术规格

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"三星K4T2G044QA-H芯片手册是一份关于2Gb DDR2 SDRAM内存芯片的技术文档，适用于需要了解或使用这款芯片的工程师。文档由三星电子发布，版本为Rev.1.0，日期为2007年12月。手册中的信息可能随产品更新而变更，且不构成任何知识产权的许可。三星产品不推荐用于生命支持、关键医疗、安全设备等可能导致生命或人身伤害的应用，也不适用于军事或国防领域，以及可能有特殊条款和规定的政府采购项目。三星电子保留在不事先通知的情况下更改产品或规格的权利。该芯片采用68FBGA封装，符合无铅和无卤素（RoHS合规）的标准。" 本文档主要涵盖了以下关键知识点： 1. **DDR2 SDRAM技术**：DDR2 SDRAM是一种双倍数据速率同步动态随机存取存储器，相较于DDR1具有更高的数据传输速度和更低的功耗。它的设计允许在时钟周期的上升沿和下降沿同时传输数据，从而实现数据速率的翻倍。 2. **K4T2G044QA芯片**：这是三星推出的2Gb（2千兆位）DDR2 SDRAM内存芯片，具备较高的存储容量，适用于需要大量内存的系统。 3. **68FBGA封装**：68球扁平无引脚封装（Fine Ball Grid Array）是一种小型化的封装技术，减少了封装尺寸，提高了集成度，适合高密度的电路板布局。 4. **环保标准**：作为RoHS合规产品，K4T2G044QA芯片不含铅和卤素，符合欧盟的《关于限制在电子电气设备中使用某些有害物质指令》（RoHS），有利于环境保护和减少电子废物的污染。 5. **使用限制**：三星明确指出，其产品不适用于生命支持、医疗、安全设备等关键应用，因为产品故障可能导致严重后果。同样，它们也不适用于军事和国防用途，以及有特定法规要求的政府项目。 6. **知识产权声明**：文档中的信息仅供参考，不构成知识产权的授予，用户需知悉并遵守相关法律法规。 7. **更新与技术支持**：用户若需要最新的产品信息或技术支持，应联系最近的三星办事处。通过这份手册，工程师可以获取到关于K4T2G044QA芯片的详细规格、操作指南、电气特性、测试条件等关键信息，以便在设计和使用过程中确保兼容性和可靠性。

Rev. 1.0 December 2007

K4T2G044QA

2Gb DDR2 SDRAM

K4T2G084QA

8 of 43

Symbol Type Function

CK, CK

Input

Clock: CK and CK

are differential clock inputs. All address and control input signals are sampled on the crossing of

the positive edge of CK and negative edge of CK

. Output (read) data is referenced to the crossings of CK and CK

(both directions of crossing).

CKE Input

Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input buffers and

output drivers. Taking CKE Low provides Precharge Power-Down and Self Refresh operation (all banks idle), or

Active Power-Down (row Active in any bank). CKE is synchronous for power down entry and exit, and for self

refresh entry. CKE is asynchronous for self refresh exit. After V

REF

has become stable during the power on and ini-

tialization swquence, it must be maintained for proper operation of the CKE receiver. For proper self-refresh entry

and exit, V

REF

must be maintained to this input. CKE must be maintained high throughout read and write accesses.

Input buffers, excluding CK, CK

, ODT and CKE are disabled during power-down. Input buffers, excluding CKE, are

disabled during self refresh.

CS Input

Chip Select: All commands are masked when CS

is registered HIGH. CS provides for external Rank selection on

systems with multiple Ranks. CS

is considered part of the command code.

ODT Input

On Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR2 SDRAM. When

enabled, ODT is only applied to each DQ, DQS, DQS

, RDQS, RDQS, and DM signal for x4/x8 configurations. For

x16 configuration, ODT is applied to each DQ, UDQS/UDQS

, LDQS/LDQS, UDM, and LDM signal. The ODT pin

will be ignored if the Extended Mode Register Set(EMRS) is programmed to disable ODT.

RAS

, CAS, WE Input Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.

(UDM), (LDM)

Input

Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH coin-

cident with that input data during a Write access. DM is sampled on both edges of DQS. Although DM pins are input

only, the DM loading matches the DQ and DQS loading. For x8 device, the function of DM or RDQS/RDQS

enabled by EMRS command.

BA0 - BA2 Input

Bank Address Inputs: BA0, BA1 and BA2 define to which bank an Active, Read, Write or Precharge command is

being applied. Bank address also determines if the mode register or extended mode register is to be accessed dur-

ing a MRS or EMRS cycle.

A0 - A14 Input

Address Inputs: Provided the row address for Active commands and the column address and Auto Precharge bit

for Read/Write commands to select one location out of the memory array in the respective bank. A10 is sampled

during a Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks

(A10 HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1 and BA2. The address inputs

also provide the op-code during Mode Register Set commands.

DQ Input/Output Data Input/ Output: Bi-directional data bus.

DQS, (DQS

)

(LDQS), (LDQS

)

(UDQS), (UDQS

)

(RDQS), (RDQS

)

Input/Output

Data Strobe: Output with read data, input with write data. Edge-aligned with read data, centered in write data. For

the x16, LDQS corresponds to the data on DQ0-DQ7; UDQS corresponds to the data on DQ8-DQ15. For the x8, an

RDQS option using DM pin can be enabled via the EMRS(1) to simplify read timing. The data strobes DQS, LDQS,

UDQS, and RDQS may be used in single ended mode or paired with optional complementary signals DQS

, LDQS,

UDQS

, and RDQS to provide differential pair signaling to the system during both reads and writes. A control bit at

EMRS(1)[A10] enables or disables all complementary data strobe signals.

In this data sheet, "differential DQS signals" refers to any of the following with A10 = 0 of EMRS(1)

x4 DQS/DQS

x8 DQS/DQS if EMRS(1)[A11] = 0

x8 DQS/DQS

, RDQS/RDQS, if EMRS(1)[A11] = 1

x16 LDQS/LDQS

and UDQS/UDQS

"single-ended DQS signals" refers to any of the following with A10 = 1 of EMRS(1)

x4 DQS

x8 DQS if EMRS(1) [A11] = 0

x8 DQS, RDQS, if EMRS(1) [A11] = 1

x16 LDQS and UDQS

NC No Connect: No internal electrical connection is present.

DDQ

Supply

Power Supply: 1.8V +/- 0.1V, DQ Power Supply: 1.8V +/- 0.1V

SSQ

Supply

Ground, DQ Ground

DDL

Supply

DLL Power Supply: 1.8V +/- 0.1V

SSDL

Supply

DLL Ground

REF

Supply

Reference voltage

4.0 Input/Output Functional Description

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三星2Gb DDR2 SDRAM K4T2G044QA芯片技术规格

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