毫米波相控阵的高性能4位CMOS相移器：低功耗与高精度
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本文档主要介绍了应用于毫米波相控阵技术的一款先进的4位有源相移器(A4-bit CMOS phase shifter)。毫米波通信在无线数据传输中具有巨大的潜力，特别是在60 GHz频段，其宽广的带宽可达3 GHz以上，这使得室内高速无线数据传输成为可能，速度达到多吉比特每秒(Gbps)级别。
该相移器的核心特点是其高精度和低功耗设计。它能够实现从40 GHz到50 GHz频率范围内360度的相位移位，且分辨率高达22.5度，这对于构建高性能的相控阵系统至关重要。通过数字化控制的增益级在可编程加权组合器中的巧妙设计，相移器在45 GHz时展现出优秀的性能，其均方根相位误差仅为5度，而增益误差仅为1.25分贝(db)。这意味着信号的稳定性得到了有效保障，对于相控阵系统的信号处理和聚焦能力有着显著提升。
测量结果显示，从40 GHz到50 GHz，输入和输出回波损耗都优于7分贝，这意味着信号传输过程中信号损失小，有利于提高通信质量。此外，这款相移器在1.2伏特(V)供电下，整个芯片的功耗非常低，仅为10.7毫安(mA)，这在考虑到输出驱动缓冲器后，仍然保持了高效能。
毫米波相控阵技术因其对高频信号的精确操控和大容量数据传输的能力，被广泛应用于雷达、卫星通信、无线通信等领域。这款4位CMOS相移器作为关键技术组件，对于推动这些应用的创新和发展具有重要意义。它的设计和性能优化对于缩小毫米波设备的尺寸，降低能耗，以及提升整体系统的效能具有重大的工程价值。在未来，随着对毫米波通信技术的持续研究和优化，这种类型的相移器有望在更广泛的频段和更高数据速率的应用中发挥重要作用。
A 4-bit CMOS phase shifter for millimeter-wave phased arrays
Chunyuan Zhou
•
Lei Zhang
•
Yan Wang
•
Zhiping Yu
•
He Qian
Received: 3 June 2012 / Accepted: 1 March 2014 / Published online: 25 March 2014
Ó Springer Science+Business Media New York 2014
Abstract A 4-bit active phase shifter for millimeter-wave
phased arrays is presented in this brief. The proposed phase
shifter has achieved a phase-shifting range of 360
with a
22:5
resolution over 40 to 50-GHz. Thanks to the careful
dimension designs of digitally controlled gain stage in the
programmable weighted combiner, the active phase shifter
achieves root-mean-square phase and gain errors of 5
and
1.25-dB at 45-GHz, respectively. The measurement results
also show that the input and output return losses are better than
7-dB from 40 to 50-GHz. The whole chip dissipates only 10.7-
mA from 1.2-V supply excluding output driven buffer.
Keywords Active phase shifter Millimeter wave
Phased array CMOS
1 Introduction
The wide bandwidth of at least 3-GHz worldwide overlap
available around 60-GHz offers the possibility of wireless
data transmission at the rate of multi gigabit per second
indoors and thus has brought in much academic and
industry interest [1–8].
However, the short wave length of the 60-GHz signal lead to
a large path loss in the air. Therefore it is preferable to use
phased array systems in 60-GHz wireless applications with
high data rate [5–9], which has the capabilities of high equiv-
alent antenna gain and thus long transmission distance even
with small-gain antennas. Moreover, beams can be formed and
steered for directional transmissions in phased arrays.
Phase shifter is one of the key blocks in phased array
transceivers to adjust signal phases of each transmitter or
receiver path to form and steer beams. In phased array
transceivers, phase shift can be achieved in RF, local
oscillator (LO), IF, analog baseband, and digital baseband
paths. Among these realizations, phase shift in LO path
preferably trades among noise figure, circuit complexity,
and power consumption as it is not in the signal path and
can operate at lower operating frequency in superhetero-
dyne architecture with shared IF and baseband, as shown in
Fig. 1. Benefiting from the signal combing after the first
mixer, the linearity requirements of the following modules
are also eased, which may reduce the power consumption
of IF and baseband circuits.
There are many active and passive phase shifters used in
phased array transceivers. Phase shifters such as reflected
type phase shifters (RTPS) [10], and varactor-loaded
transmission-line phase shifters (VLTLPS) [11] are
attractive for their low power consumption, however, they
suffer from large insertion loss and occupy large chip areas.
On the other hand, active phase shifters can be realized
with low cost and with much lower insertion loss or even
positive gain when driving capacitance in a real circuit.
They therefore become more attractive and competitive
versus their passive counterparts in the design of phased
arrays.
This brief presents an active millimeter-wave 4-bit
phase shifter for LO path phase shifting in 60-GHz phased
array transceivers. It is implemented in 90-nm CMOS
process and has realized a 22:5
phase resolution with 5
RMS phase error and 1.25-dB RMS gain error, respec-
tively. This brief is organized as follows. Section 2 shows
circuits implementation and design considerations of the
proposed active phase shifter. Section 3 gives the mea-
surement results, and conclusions are drawn in Sect. 4.
C. Zhou L. Zhang (&) Y. Wang Z. Yu H. Qian
Institute of Microelectronics, Tsinghua University,
Beijing 100084, China
e-mail: zhang.lei@tsinghua.edu.cn
123
Analog Integr Circ Sig Process (2014) 79:461–468
DOI 10.1007/s10470-014-0287-z
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