HD3SS3212
,
HD3SS3212I
www.ti.com.cn
ZHCSDQ7 –MAY 2015
8.5 Electrical Characteristics
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
CC
Device active current V
CC
= 3.3 V, OEn = 0 0.6 0.8 mA
I
STDN
Device shutdown current V
CC
= 3.3 V, OEn = V
CC
5 20 µA
C
ON
Output ON capacitance 0.6 pF
C
OFF
Output OFF capacitance 0.8 pF
R
ON
Output ON resistance V
CC
= 3.3 V; V
CM
= 0 to 2 V; IO = –8 5 8 Ω
mA
ΔR
ON
On-resistance match between pairs of the V
CC
= 3.3 V; –0.35 V ≤ V
IN
≤ 2.35 V; 0.5 Ω
same channel IO = –8 mA
R
FLAT_ON
On-resistance flatness RON(MAX) – V
CC
= 3.3 V; –0.35 V ≤ V
IN
≤ 2.35 V 1 Ω
RON(MAIN)
I
IH,CTRL
Input high current, control pins (SEL, OEn) 1 µA
I
IL,CTRL
Input low current, control pins (SEL, OEn) 1 µA
I
IH,HS
Input high current, high-speed pins V
IN
= 2 V for selected port, A and B 1 µA
[Ax/Bx/Cx][p/n] with SEL = 0, and A and C with SEL
= V
CC
I
IH,HS
Input high current, high-speed pins V
IN
= 2 V for non-selected port, C 100 140 µA
[Ax/Bx/Cx][p/n] with SEL = 0, and B with SEL =
V
CC
(1)
I
IL,HS
Input low current, high-speed pins 1 µA
[Ax/Bx/Cx][p/n]
(1) There is a 20-kΩ pull-down in non-selected port.
8.6 High-Speed Performance Parameters
PARAMETER TEST CONDITION MIN TYP MAX UNIT
ƒ = 0.3 MHz –0.5
f = 0.625 MHz -0.55
I
L
Differential insertion loss ƒ = 2.5 GHz –0.8 dB
ƒ = 4 GHz –1.4
ƒ = 5 GHz –1.6
BW –3-dB bandwidth 8 GHz
ƒ = 0.3 MHz –25
ƒ = 2.5 GHz –13
R
L
Differential return loss dB
ƒ = 4 GHz –13
ƒ = 5 GHz – 12
ƒ = 0.3 MHz –75
ƒ = 2.5 GHz –23
O
IRR
Differential OFF isolation dB
ƒ = 4 GHz –19
ƒ = 5 GHz –19
ƒ = 0.3 MHz –90
ƒ = 2.5 GHz –35
X
TALK
Differential crosstalk dB
ƒ = 4 GHz –32.5
ƒ = 5 GHz –32
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