RF磁控溅射与离子束溅射法制备AZO / Cu / AZO三层膜的性能研究

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"这篇研究论文探讨了通过射频磁控溅射和离子束溅射技术制备的AZO（铝掺杂锌氧化物）/铜/AZO三层薄膜的结构、光学和电学特性。该研究比较了三层薄膜与双层薄膜（Cu/AZO, AZO/Cu）以及单层AZO薄膜的性能，并分析了AZO层厚度对三层薄膜性能的影响。" 正文: 在现代电子和光电子技术中，透明导电薄膜（如AZO）因其在太阳能电池、显示器和平板显示等领域的广泛应用而备受关注。本文深入研究了由射频磁控溅射和离子束溅射方法合成的AZO/Cu/AZO三层结构薄膜。这两种溅射技术是物理气相沉积(PVD)中常用的方法，能够精确控制薄膜的组成和结构。首先，射频磁控溅射是一种广泛用于制备高质量薄膜的技术，它利用射频电源激发等离子体，使靶材(在此情况下为AZO)的原子或分子被溅射到基片上形成薄膜。而离子束溅射则通过高能离子轰击靶材，使得靶材原子以更高的定向性沉积在基片上，特别适合于制备低缺陷密度的薄膜，如这里的铜层。 AZO/Cu/AZO三层结构薄膜具有优异的光电性能，这得益于铜中间层的存在。铜作为导电层，可以显著提高整体薄膜的电导率。同时，AZO层作为透明导电氧化物，既保持了透明性，又提供了良好的电导路径。通过改变AZO层的厚度，可以调控整个薄膜的光学和电学特性，例如调整其透明度和电阻率。研究表明，随着AZO层厚度的增加，三层薄膜的透明度可能会降低，但电导率可能会提高。这是因为更厚的AZO层可以提供更多的导电路径，但也可能导致更多的光吸收。此外，AZO层的厚度可能会影响铜层的界面态，从而影响薄膜的载流子迁移率和接触电阻。关键词包括AZO、三层薄膜、离子束溅射、透明导电薄膜，这些术语突出了研究的核心内容。AZO作为一种无铅、环保的透明导电材料，其在新型电子器件中的应用潜力巨大。而离子束溅射的引入则为制备高性能的AZO/Cu/AZO复合薄膜提供了新的途径。论文的接收和修订过程表明，该研究经过了严谨的同行评审，确保了研究结果的科学性和可靠性。通过这样的研究，科学家们可以更好地理解材料的性质，从而设计出更具优化性能的透明导电薄膜，推动相关领域技术的发展。

Review

Structural, optical and electrical properties of AZO/Cu/AZO tri-layer ﬁlms

prepared by radio frequency magnetron sputtering and ion-beam sputtering

Tianlin Yang

, Zhisheng Zhang

, Shumei Song

, Yanhui Li

MaoShui Lv

, Zhongchen Wu

, Shenghao Han

School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, PR China

Department of Space Science and Applied Physics, Shandong University at Weihai, Weihai 264209, Shandong, PR China

article info

Article history:

Received 24 January 2008

Received in revised form 24 May 2008

Accepted 24 May 2008

Keywords:

AZO

Tri-layer ﬁlms

Ion-beam sputtering

Transparent conducting ﬁlms

abstract

Highly conducting tri-layer ﬁlms consisting of a Cu layer sandwiched between Al-doped ZnO (AZO)

layers (AZO/Cu/AZO) were prepared on glass substrates at room temperature by radio frequency (RF)

magnetron sputtering of AZO and ion-beam sputtering of Cu. The tri-layer ﬁlms have superior photo-

electric properties compared with the bi-layer ﬁlms (Cu/AZO, AZO/Cu) and single AZO ﬁlms. The effect of

AZO thickness on the properties of the tri-layer ﬁlms was discussed. The X-ray diffraction spectra show

that all ﬁlms are polycrystalline consisting of a Cu layer with the cubic structure and two AZO layers with

the ZnO hexagonal structure having a preferred orientation of (0 0 2) along the c-axis, and the crystallite

size and the surface roughness increase simultaneously with the increase of AZO thickness. When the

AZO thickness increases from 20 to 100 nm, the average transmittance increases initially and then de-

creases. When the ﬁxed Cu thickness is 8 nm and the optimum AZO thickness of 40 nm was found,

a resistivity of 7.92  10

5

cm and an average transmittance of 84% in the wavelength range of visible

spectrum of tri-layer ﬁlms have been obtained. The merit ﬁgure (F

) for revaluing transparent electrodes

can reach to 1.94  10

2

1

1. Introduction

Transparent conducting oxide (TCO) ﬁlms are extensively used

for a variety of applications in microelectronic systems, such as

liquid crystal displays, organic light emitting diodes, and solar cells

[1–5]. Indium tin oxide (ITO) and doped ZnO thin ﬁlms have been

investigated extensively because their interesting electrical and

optical properties make them suitable for many applications

[6–10]. However, the resistivity of these thin ﬁlms is still high,

which limits the use as transparent electrodes for color ﬁlters in

super twisted nematic liquid crystal displayers (STN-LCDs) [11].In

order to improve the electrical and optical properties of transparent

conducting ﬁlms, the tri-layer ﬁlms consisting of a metal layer and

semiconductor layers have been studied, such as ZnS/Ag/ZnS [12],

ITO/Metal/ITO [13], ITO/Ag/ITO [14], ITO/Au/ITO [15], ZnO/Cu/ZnO

[16] and ZnO/Ag/ZnO [17]. For ITO/Ag/ITO (I/M/I) tri-layer ﬁlms, ITO

lacks the high refraction required to reduce the strong reﬂection

from the Ag layer [12]. Because of the high refraction of ZnO, ZnO/

Metal/ZnO tri-layer ﬁlms with high transmittance and conductivity

have been studied [16,17]. But to our knowledge, there are few

reports on AZO/Cu/AZO tri-layer transparent conducting ﬁlms.

According to the parallel circuit model [13], compared with ZnO/

Cu/ZnO tri-layer ﬁlms, AZO/Cu/AZO tri-layer ﬁlms with further low

resistivity can be expected due to AZO layers with low resistance.

Moreover, in many reports, the metal layer was prepared by RF

magnetron sputtering or vacuum heat evaporation [12,16]. Com-

pared with ion-beam sputtering, these depositing methods are

disadvantageous in growing high quality metal layers, and the

thickness of metal layers cannot be controlled precisely. In our

work, the Cu layers were prepared by ion-beam sputtering. The

optimum thickness (8 nm) of the Cu layer for AZO/Cu/AZO tri-layer

ﬁlms is obtained, which will be reported elsewhere.

In this paper, bi-layer (Cu/AZO, AZO/Cu) and tri-layer (AZO/Cu/

AZO) ﬁlms were prepared on glass substrates at room temperature

by RF magnetron sputtering of AZO and ion-beam sputtering of Cu.

The bi-layer and tri-layer ﬁlms were investigated comparatively.

The effect of AZO thickness on the structural, optical and electrical

properties of AZO/Cu/AZO tri-layer ﬁlms was analyzed in detail.

2. Experimental details

Bi-layer and tri-layer ﬁlms were deposited on glass substrates by

RF magnetron sputtering using a ceramic oxide AZO target (7.6 cm

diameter, Al

:ZnO ¼ 3:97 wt.%) and ion-beam sputtering using

Corresponding author. School of Electronic and Information Engineering,

Tianjin University, Tianjin 300072, PR China.

E-mail address: ytlin@sdu.edu.cn (T. Yang).

Contents lists available at ScienceDirect

Vacuum

journal homepage: www.elsevier.com/locate/vacuum

doi:10.1016/j.vacuum.2008.05.029

Vacuum 83 (2009) 257–260

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