高性能PSR SOI电流模式带隙基准源

15 浏览量更新于2024-08-27 收藏 500KB PDF 举报

"这篇研究论文‘A High PSR SOI Current-mode Bandgap Reference’由上海复旦大学ASIC&System State Key Laboratory的Sheng Junli、Jiang Bingjian和Tang Zhangwen等人撰写，探讨了一种高电源抑制比（PSR）的硅-on-insulator（SOI）电流模式带隙基准源。" 在模拟和混合信号电路，如数据转换器中，参考源是至关重要的模块。理想的参考源应该在温度、电源电压和工艺变化下保持稳定。带隙参考是一种常见的方法，它通常有两种经典模式：电压模式和电流模式。除此之外，还有一种称为反向带隙模式。该论文提出的设计采用了GSMC 130纳米SOI工艺，这种工艺可以提供更高的集成度和性能。设计的带隙基准源的输出电压为0.528伏，输出电流为10.2微安。通过实验验证，该电路的电压参考温度系数在-40°C至125°C的范围内为115ppm/°C，而电流参考的温度系数小于59.4ppm/°C，这意味着其在宽温度范围内具有良好的稳定性。电源抑制比（PSR）是衡量参考源对电源噪声抑制能力的重要指标，该设计的PSR在100kHz时达到了95.8dB，这表明它能有效地抑制电源波动对参考电压的影响，提高了整个系统性能的稳定性。此外，通过调整输出电阻，可以在不改变温度系数的情况下实现其他输出电压值，增加了设计的灵活性。带隙基准源的功耗仅为173微瓦，这使其成为低功耗应用的理想选择。低功耗、高PSR和良好的温度稳定性结合在一起，使得该设计适用于各种高性能的模拟和混合信号电路。这篇论文详细介绍了采用SOI技术的高PSR电流模式带隙基准源，展示了其在温度稳定性、电源抑制和功耗方面的优越性能，为未来相关领域的研究和应用提供了新的思路和设计参考。关键词包括：带隙基准，SOI，温度系数，电源抑制比。

A High PSR SOI Current-mode Bandgap Reference

Sheng Junli

, Jiang Bingjian

, Tang Zhangwen*

ASIC & System State Key Laboratory, Fudan University, Shanghai 201203, China

* Email:zwtang@fudan.edu.cn

Abstract

This paper presents a high PSR current mode bandgap

references. The circuits are designed with adopting

GSMC 130 nm SOI process. The bandgap’s output

voltage value is 0.528V and current value is 10.2μA. It is

tapped out that the temperature coefficient of voltage

reference is 115 ppm/°C from -40°C to 125°C and

current reference is less than 59.4 ppm/°C , power

consumption is 173 μW, the PSR is 95.8 dB at 100kHz,

and adjusting output resistance can realize other output

voltage value with no variation on temperature

coefficient.

Keys：Bandgap，SOI ，Temperature coefficient，PSR

Introduction

Reference source is an important module in analog and

mixed-signal circuits such as data converters. The

reference source should not have variation following

temperature, power voltage and process. Bandgap

reference is a common method which have two classic

mode[1]: voltage mode and current mode. In addition to

that, there is a mode named reverse bandgap[2].

As scaling down, it is uneasy to use voltage mode to

design bandgap voltage reference to generate a output at

about 1.25V by using power lower than 1.2V, not to

mention generating a current reference[3]. Lower power

supply may be more sensitive with disturbance from

environment, so designing a bandgap with low PSR have

the necessity.

Different from normal body silicon, SOI forms a

semiconductor film on an insulator, which cross-section

drawn is in Figure 1 .So it eliminates the parasitic latch

effect which can be in body silicon CMOS circuit

completely. The drain and source are no longer like a

small well in body silicon, so they have smaller parasitic

capacitance and less noise from substrate. It also proofs

radiation. Then SOI could be applied in the area of

high-speed circuits and irradiation circuits. Furthermore,

as is shown in Figure 2 , the body which is the active

area under poly gate is connected over the poly, so it has

no effect on voltage difference between source and drain

* Project supported by the National Science Funding of China (No.

61376036), ASIC & System State-Key Laboratory Funding, China (No.

2015MS010).

as it is fairly connected by one side or two sides of

source and drain. All these provide a better power

restraint than body silicon.

S G

OXOX OX

oxide

substrate

Figure 1.The cross-section drawn of SOI

S G

Figure 2. The layout of T-mode and H-mode SOI

2. Circuit realization

The target is to design a reference source to supply a

voltage reference of about 0.525V and a current

reference of about 10μA. The design is taken most view

on temperature coefficient, PSR, and output voltage.

Figure 3 shows a current mode bandgap with output

voltage value of 0.528V and current value of 10.2μA.

2.1 Current mode bandgap core

In Figure 3, resisters R1~3 and diodes D1~2 generate a

current I1 that has less relation with temperature if we

neglect the temperature character of resistance.

1 ln( )



I N V V

(1)

In Figure 3, R1 and D1 and D2 generate PTAT current,

R1 and D2 generate CTAT current. A is the error

amplifier. Usually, we can also use a MOS which works

at the sub-threshold state[4] and use a MOS which is

diode-connected[5] instead of a common diode. Usually,

we use a bipolar which is diode-connected for senior

下载后可阅读完整内容，剩余3页未读，立即下载

weixin_38538472

粉丝: 5
资源: 858

高性能PSR SOI电流模式带隙基准源

ABB 软启动器 PSR-60-105 手册

psr-http-message-bridge：PSR-7桥

psr-7-service-provider

ABB 软启动器PSR3－－PSR16技术手册.pdf

psr-container-postmark:用于Postmark API客户端的PSR-11工厂

psr-dummy-provider:虚拟PSR提供程序

psr-cache-redis:easyswoole缓存Redis驱动器实现PSR-16

psr-14-pgframwork-app:pgframwork由事件驱动

psr-log-extension:Psr\Log 包的扩展

ABB 软启动器 PSR-37-45

最新资源