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首页2021 IEEE国际固态电路会议特刊:集成电路设计前沿
2021 IEEE国际固态电路会议特刊:集成电路设计前沿
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这篇资源是《IEEE固态电路期刊》(JSSC) 2021年12月刊,专注于固态电路的晶体管级设计,特别是集成电路的设计。这个特刊是关于2021年IEEE国际固态电路会议(ISSCC)的专题,由Y. Chiu, M.-K. Law, N. Krishnapura, J. T. Stauth和J. S. Walling担任客座编辑。该期刊包含多篇研究论文,涵盖了温度传感器、湿度传感器、音频放大器和抑制干扰技术等多个领域的创新成果。
其中一篇论文介绍了自我校准的混合热扩散率/电阻型温度传感器,作者是S. Pan, J. A. Angevare和K. A. A. Makinwa。这种传感器能够实现更精确的温度测量,并且可能具有自动校准功能,提高了系统可靠性。
另一篇论文是关于能源高效的CMOS湿度传感器,采用自适应范围转移缩放CDC和电源感知浮动反相器放大器阵列,作者包括H. Li, Z. Tan等人。这项技术旨在提高湿度检测的能效,同时降低功耗。
A. Matamura等人提出了一种基于82毫瓦的无滤波器类D耳机放大器,具有-93分贝的总谐波失真加噪声(THD+N),113分贝的信噪比(SNR)以及93%的效率。这种设计为音频应用提供了高质量的音频输出和高能效。
T. Rooijers等人的工作则聚焦于一种填充技术,用于增强切换放大器中的IMD抑制,以提高信号处理的稳定性。
最后,还有一种5伏动态单级级联放大器,采用类C并行结构,接近零电压摆幅,能够提升功率转换效率和性能。
这些论文代表了固态电路领域的最新研究进展,展示了在传感器技术、能源效率和信号处理等方面的技术创新。对于从事集成电路设计、微电子学和相关领域的研究人员来说,这些研究成果具有很高的参考价值。
3558 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 56, NO. 12, DECEMBER 2021
TABLE I
P
ERFORMANCE SUMMARY AND COMPARISON TO PRIOR ART
Fig. 24. Noise power spectral densities of the WB and TD sensors.
D. Resolution and FoM
After decimated by sinc
2
filters, the sensors’ power spectral
densities (100-s interval, Hanning window, 3× averaging) are
shown in Fig. 24, and the corresponding resolution versus con-
version time plots are shown in Fig. 25. To accurately deter-
mine the WB sensor resolution, a differential measurement
is used, that is, it is calculated from the standard deviation
of the output difference between two identical sensors on the
same die. The WB sensor achieves 450 μK
rms
resolution with
T
conv
= 10 ms with a 1-s interval, which corresponds to a
0.13-pJ·K
2
resolution figure-of-merit (FoM). After enabling
system-level chopping ( f
CHL
= 100 Hz), its 1/ f noise corner
drops from ∼1 Hz to below 10 mHz. In comparison, the TD
sensor’s resolution is only 15 mK with T
conv
= 1sand f
CHL
=
1 Hz, which corresponds to a resolution FoM of 1.2 μJ·K
2
.
E. Comparison to Previous Work
Table I summarizes the p erformance of the proposed hybrid
sensor prototype and compares it with previous WB sen-
sors [8], [9] as well as other sensors with low-cost calibratio n
(BJT [4], [5] or TD [16]). Compared with prev ious WB
sensors, this work achieves a state-of-the-art relative inac-
curacy after a 2-pt temperature calibr a tion an d the lowest
Fig. 25. Resolution versus conv e rsion time of different sensors.
reported 1/ f noise corner, while the resolution FoM remains
roughly the same. After a cost-effective h eating-assisted
self-calibration that does not require accurate temperature
information, this sensor achieves an inaccuracy of 0.25
◦
C
from −55
◦
C to 125
◦
C(3σ), which is comparable to that
of the voltage-calibrated BJT sensors. Although slightly less
accurate than the state-of-the-art TD sensor [16], this sensor
is 6× more energy-efficient. More importantly, it can achieve
sufficient resolution for self-calibration with a short conversion
time of 1 s. It is also worth noting that this work serves as
a prototype of the TD/resistor hybrid temperature sensor. Due
to the scalability of TD senso rs, better performance can be
expected in nanometer CMOS processes.
VI. C
ONCLUSION
A hybrid TD/resistor-based temperature sensor has
been realized in a standard 0.18-μm CMOS technology.
By self-calibrating an inaccurate, but energy-efficient,
resistor-based sensor using an inherently accurate, but
power-hungry, TD sensor, the hybrid sensor achieves both
high energy efficiency and decent accuracy. As the need for
external references and temperature-stabilized envir onments is
obviated by the use of an on-chip reference, calibration time
and costs can be greatly reduced. Also, the chip area overhead
PAN et al.: SELF-CALIBRAT ED HYBRID TD/RESISTOR-BASED TEMPERATURE SENSOR 3559
is suppressed by reusing the PDM readout circuit. The
sensor dissipates 66 μW from a 1.8-V supply and achieves
an inaccuracy of 0.25
◦
C(3σ) from −55
◦
C to 125
◦
Cafter
self-calibration at room temper ature (RT, ∼25
◦
C) and an
elevated temperature (∼85
◦
C). It also achieves a sub-10-mHz
1/ f noise corner and a resolution FoM of 0.13 pJ·K
2
.
A
CKNOWL EDGMENT
The authors would like to thank Z.-Y. Chang, L. Pakula, and
R. van Puffelen, for their assistance with the measurements.
R
EFERENCES
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to +125
◦
C after heater-assisted voltage calibration,” in IEEE Int. Solid-
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+180
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[7] P. Park, D. Ruffieux, and K. A. A. Makinwa, “A thermistor-based
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Jul. 2015.
[8] S. Pan, Y. Luo, S. H. Shalmany, and K. A. A. Makinwa, “A resistor-
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2
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[9] S. Pan, C. Gurleyuk, M. F. Pimenta, and K. A. A. Makinwa, “10.3 A
0.12 mm
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◦
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from -40
◦
C to 180
◦
C,” IEEE Int. Solid-State Circuits Conf. (ISSCC)
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[10] S. Pan and K. A. A. Makinwa, “A 10 fJ·K
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wheatstone bridge tem-
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Circuits, vol. 56, no. 2, pp. 501–510, Feb. 2021.
[11] K. Pelzers, H. Xin, E. Cantatore, and P. Harpe, “A 2.18-pJ/conv e rsion,
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2
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2
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[12] Y. Lee, W. Choi, T. Kim, S. Song, K. A. A. Makinwa, and Y. Chae,
“A 5800-μm
2
resistor-based temperature sensor with a one-point
trimmed inaccuracy of ±1.2
◦
C(3σ ) from –50
◦
C to 105
◦
Cin
65-nm CMOS,” IEEE Solid-State Circuits Lett., vol. 2, no. 9, pp. 67–70,
Sep. 2019.
[13] J. A. Angevare, Y. Chae, and K. A. A. Makinwa, “5.3 A highly digital
2210μm
2
resistor-based temperature sensor with a 1-Point trimmed
inaccuracy of ± 1.3
◦
C(3σ ) from -55
◦
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◦
C in 65nm CMOS,”
in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers,
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[14] K. A. A. Makinwa. Smart Temperature Sensor Survey.
Accessed: Apr. 15, 2021. [Online]. Av ailable: http://ei.ewi.tudelft.nl/
docs/TSensor_survey.xls
[15] C. P. L. v a n Vroonhoven and K. A. A. Makinwa, “Thermal diffusivity
sensing: A new temperature sensing paradigm,” in Proc. IEEE Custom
Integr. Circuits Conf. (CICC), Sep. 2011, pp. 1–6.
[16] C. P. L. van Vroonhoven and K. A. A. Makinwa, “A thermal-diffusivity-
based temperature sensor with an untrimmed inaccuracy of ±0.2
◦
C(3σ )
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◦
C,” in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig.
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[17] U. Sonmez, F. Sebastiano, and K. A. A. Makinwa, “Compact thermal-
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Mar. 2017.
[18] S. Pan, J. A. Angevare, and K. A. A. Makinwa, “5.4 a hybrid thermal-
diffusivity/resistor-based temperature sensor with a self-calibrated inac-
curacy of ±0.25
◦
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◦
C to 125
◦
C,” in IEEE Int. Solid-State
Circuits Conf. (ISSCC) Dig. Tech. Papers, Feb. 2021, pp. 78–79.
Sining Pan (Graduate Student Member, IEEE)
was born in Beijing, China, in 1991. He received
the B.Sc. degree in electronic engineering from
Tsinghua University, Beijing, in 2013, and the
M.Sc. and Ph.D. degrees in electrical engineering
both (cum laude) from Delft University Technology,
Delft, The Netherlands, in 2016 and 2021, respec-
tively. He is now a Post-Doctoral Researcher with
the Electronic Instrumentation Laboratory, Delft
Uni versity of Technology. His research interests
include smart sensors, CMOS frequency references,
and modulators.
Dr. Pan was a recipient of the ADI Outstanding Student Designer Award
(2019) and the IEEE SSCS Pre-Doctoral Achiev e ment Award (2020). He
serves as a reviewer for the JSSC, TCAS-I, TCAS-II, TIM, Sensors Journal,
and T-VLSI.
Jan A. Angevare (Graduate Student Member, IEEE)
was born in Leiden, The Netherlands, in 1990.
He received the B.Sc. and M.Sc. degrees in electrical
engineering from the Delft University of Technol-
ogy, Delft, The Netherlands, in 2012 and 2015,
respectiv ely, where he is currently pursuing the
Ph.D. degree.
His research interests include mixed-signal design
and smart sensors.
KofiA.A.Makinwa(Fellow, IEEE) recei ved the
B.Sc. and M.Sc. degrees from Obafemi Awolowo
Uni versity, Ife, Nigeria, in 1985 and 1988, respec-
ti vely, the M.E.E. degree from the Philips Inter-
national Institute, Eindhoven, The Netherlands, in
1989, and the Ph.D. de gree from the Delft University
of Technology, Delft, The Netherlands, in 2004.
From 1989 to 1999, he was a Research Scien-
tist with Philips Research Laboratories, Eindhoven,
The Netherlands, where he worked on interactive
displays and digital recording systems. In 1999, he
joined the Delft University of Technology, where he is currently an Antoni van
Leeuwenhoek Professor and the Head of the Microelectronics Department. His
research interests include the design of mixed-signal circuits, sensor interfaces,
and smart sensors. This has led to 16 books, over 300 technical papers, and
over 30 patents.
Dr. Makinwa has been on the program committees of several IEEE con-
ferences, and was the Analog Subcom Chair of ISSCC. He has also served
the Solid-State Circuits Society as a Distinguished Lecturer and as an Elected
Member of its Adcom. He is currently one of the organizers of the Advances
in Analog Circuit Design Workshop and the Sensor Interfaces Meeting. He
is an ISSCC top-10 contributor, and a co-recipient of 16 best paper awards,
from the JSSC, ISSCC, VLSI, ESSCIRC, and Transducers, among others. He
is a member of the Royal Netherlands Academy of Arts and Sciences.
3560 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 56, NO. 12, DECEMBER 2021
Energy-Efficient CMOS Humidity Sensors Using
Adaptive Range-Shift Zoom CDC and Power-Aware
Floating Inverter Amplifier Array
Heyi Li , Graduate Student Member, IEEE, Zhichao Tan , Senior Member, IEEE, Yuanxin Bao, Member, IEEE,
Han Xiao, Hao Zhang, Member, IEEE, Kaixuan Du, Linxiao Shen
, Member, IEEE, Jiayoon Ru, Member, IEEE,
Yihan Zhang, Student Member, IEEE,LeYe
, Member, IEEE, and Ru Huang, Fellow, IEEE
Abstract—This article presents an adaptive zoom-capacitance-
to-digital converter (CDC)-based CMOS humidity sensor. The
humidity sensor is realized by means of two differential capac-
itors whose dielectrics are sensitive to humidity. The sensing
capacitors are interfaced with a zoom CDC, which consists
of a successive-approximation-register (SAR) analog-to-digital
converter (ADC) and a 3rd-order delta–sigma modulator (M).
The SAR ADC eliminates the influence of the baseline capaci-
tance to reduce the input range of the M. To improve the
energy efficiency of the CDC across the full input range, a power-
aware floating inverter amplifier (FIA) array is proposed, which
is configured based on the conversion results of the SAR logic.
In addition, an adaptive range-shift (ARS) zoom CDC is proposed
to: 1) resist off-chip parasitics and interference and 2) allow low
redundancy and a more energy-efficient FIA-based compara-
tor, thus reducing power consumption. The proposed CMOS
humidity sensor is implemented in a 0.11-μm CMOS process.
Measurement results show a capacitance resolution of 17.9 aF and
an effective number of bits (ENOB) of 14.0 within a conversion
time of 1.01 ms. The proposed humidity sensor consumes 1.5 μW
of power and exhibits a 0.0094 % relative humidity (RH)
resolution and a ±1.5 %RH peak-to-peak accuracy (3σ error
of 5.5 %RH) among 12 chips from 20 to 85 %RH, and it achieves
a figure of merit (FoM) of 0.135 pJ·%RH
2
,whichismorethan
six times better than the state of the art.
Index Terms—Adaptive range shift (ARS), capacitance-to-
digital converter (CDC), delta–sigma modulator (M), floating
inverter amplifier (FIA), humidity sensor, power aware, zoom.
Manuscript received April 30, 2021; revised July 11, 2021 and August 27,
2021; accepted September 12, 2021. Date of publication October 20, 2021;
date of current version November 24, 2021. This article was approved by
Associate Editor Man-Kay Law. This work was supported in part by the
National Key Research and Development Program of China under Grant
2019YFB2204900 and in part by the 111 Project under Grant B18001.
(Corresponding authors: Le Ye; Ru Huang.)
Heyi Li, Hao Zhang, Kaixuan Du, Linxiao Shen, Jiayoon Ru, Yihan Zhang,
and Ru Huang are with the Beijing Laboratory of Future IC Technology
and Science, School of Integrated Circuit, Peking Univ ersity, Beijing 100871,
China (e-mail: ruhuang@pku.edu.cn).
Zhichao Tan is with the College of Information Science and Electronic
Engineering, Zhejiang Univ ersity, Hangzhou 310027, China.
Yuanxin Bao and Le Ye are with the Beijing Laboratory of Future IC
Technology and Science, School of Integrated Circuit, Peking University,
Beijing 100871, China, and also with the Advanced Institute of Infor-
mation Technology, Peking University, Hangzhou 311215, China (e-mail:
yele@pku.edu.cn).
Han Xiao is with the Advanced Institute of Information Technology, Peking
Uni versity , Hangzhou 311215, China.
Color versions of one or more figures in this article are available at
https://doi.org/10.1109/JSSC.2021.3114189.
Digital Object Identifier 10.1109/JSSC.2021.3114189
I. INTRODUCTION
I
N THE era of the Internet of Things (IoT), an enormous
number of sensors need to be deployed at IoT nodes.
Energy-efficient sensor interface circuits are the key to the
successful application of such sensors due to the limitations
of the batteries or energy harvesters of IoT nodes. In addition,
good sensor resolution is required to meet the demands for
the perception of weak signals, sen sor nonlinearity calibration,
and temperature compensation. Moreover, to ensure that such a
chip can remain stable for a long time in a ha rsh environment,
it must withstand process, voltage, and temperature (PVT)
variations as well as unforeseeable parasitics and interference.
Capacitive sensors are based on capacitance-to-charge con-
version followed b y charge-to-digital conversion [1]. They
are also very cost-effective thanks to the capacitor availabil-
ity in standard CMOS processes, which is crucial for IoT
nodes. As shown in (1), the sensing capacitance C
sense
is
determined by the dielectric constant ε and the distance d
between the capacitor plates as well as the area A of the
capacitor plates. Because any changes in these parameters
affect C
sense
, different sensors can be realized by utilizing
such parameter changes. For instance, humidity sensing can be
realized by taking advantage of the variation in the dielectric
constant ε [2]–[5]
C
Sense
=
ε·A
d
. (1)
There are two main challenges in the design of readout
systems for humidity sensors. First, limited by battery size and
the power harvested by energy harvesters, humidity sensors
for IoT applications need to be extremely efficient in energy
usage. Second, they require a high conversio n resolution
for two-point calibration and temperature compensation. For
instance, for the humidity sensor reported in [2], the sensitivity
of the on-chip humidity capacitor is 1.4 fF/% relative humidity
(RH), which means that to achieve a target humidity resolution
of 0.05 %RH, a capacitance resolution of 70 aF is required.
Such a capacitance-to-digital converter (CDC) resolution is
needed to calibrate the worst case h umidity sensor nonlinearity
of ±0.8 %RH. In addition, the humidity capacitance is usually
on th e order of pF [2]–[5], and th e re is very little charge
information that can be transferred to the succeeding stages
0018-9200 © 2021 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
See https://www.ieee.org/publications/rights/index.html for more information.
LI et al.: ENERGY-EFFICIE NT CMOS HUMIDITY SENSORS USING ARS ZOOM CDC 3561
due to the effect of the baseline capacitance, resulting in
deterioration in energy efficiency.
Successive approximation register (SAR)-based CDCs have
excellent energy efficiency when targeting low- and medium-
resolution applications [6]–[16], while for high-resolution
application scenarios, frequency-locked loop (FLL)-based and
delta–sigma ()-based CDCs are preferred. FLL-based
CDCs can achieve high resolution and suppress nonlinear-
ity across PVT variations but at the cost of high power
consumption due to their active filters and bias circuits [4].
-based CDCs can also achieve high resolution by virtue
of noise shaping. However, their power-hungry operational
transconductance amplifiers (OTAs) significantly degrade their
energy efficiency.
Zoom CDCs were proposed in [3], [17], and [18] as a
hybrid of energy-efficient SAR analog-to-digital converters
(ADCs) and high-resolution d elta–sigma modulators (Ms)
to achieve better performance. Nevertheless, conventional
zoom CDCs usually require high redundancy and low-offset
comparators to ensure that the signal falls in the M input
range. In addition, the bandwid th and driving capability of the
OTAs in conventional zoom CDCs are fixed, and the energy
efficiency will degrade as the input capacitance decreases.
Therefore, there is a tradeoff between energy efficiency and
dynamic range.
This article addresses these issues by presenting a highly
adaptive zoom-CDC-based CMOS humidity sensor. It con-
sumes only 1.5 μW of power while achieving a figure of
merit (FoM) of 0.135 pJ·%RH
2
, which is better than the
previous state of the art, by virtue of three techniques:
1) a power-aware scheme that dynamically adjusts the num-
ber of active OTAs in accordance with the input capaci-
tance, optimizing the power over the entire dynamic range;
2) an adaptive range-shift (ARS) technique that shifts the
M working range to prevent the OTAs from working in
the low-gain region, allowing an ultralow-power compara-
tor and ultralow-power OTAs to be used; and 3) floating
inverter amplifiers (FIAs) [19], which further reduce the
power consumption thanks to their charge-domain biasing
nature.
This article is an extension of [20] an d is organized as
follows. Section II reviews conventional humidity sensors and
CDC techniques. Section III presents the proposed energy-
efficient humidity sensor. Sectio n IV is devoted to the details
of the circuit implementation of the h umidity senso r. Section V
presents measured results. Finally, Section VI concludes this
article.
II. P
REVIOUS CD CS AND HUMIDITY SENSORS
A. SAR-Based CDCs
In SAR-based CDCs, complete conversion can be real-
ized within only a few conversion cycles, thus achieving a
short conversion time. In addition, active OTAs are rarely
used in conventional SAR-based CDCs. The major source
of energy consumption is the charging and discharging of
the input capacitor; therefore, high energy efficiency can
be achieved. Tanaka et al. [13] present a conventional
Fig. 1. (a) Parasitic-insensitive SAR CDC [14]. (b) Swing-enhanced SAR
CDC using the CDS technique [15].
SAR CDC using a charge redistribution technique. Since
an input capacitor and a digital-to-analog converter (DAC)
are directly connected together to charge and discharge the
capacitor, there is a large fixed capacitance at the input of
the comparator, which significantly reduces the input swin g
of the comparator, thereby limiting the effective number of
bits (ENOB) of the CDC. One solution is to isolate the input
of the comparator from the large input capacitance through
a switched-capacitor (SC) integrator, as shown in Fig. 1(a).
This increases the input swing through the closed-loop gain
and reduces the impact of the large fixed capacitance on
the resolution loss [14]. Furthermore, Ha et al. [15] pro-
pose a correlated double sampling (CDS) technique that can
further increase the input swing, as shown in Fig. 1(b),
thereby reducing the resolution loss due to comparator offsets.
Fig. 2(a) [16] shows a differential SAR-based CDC using
inverter-based amplifiers, wh ich benefits from signal ampli-
fication to alleviate the resolution loss caused by comparator
offsets to a certain extent. However, the gain of a single-stage
inverter-based amplifier may not be adequate to overcome
the resolution loss caused b y the offset. Omran et al. [8]
report a single-ended CDC based on a chain of inverter-based
amplifiers, as shown in Fig. 2(b ). The high gain introduced by
the amplifier chain can further reduce the resolution loss, but
this comes at the cost of increased power consumption.
B. M-Based and FLL-Based CDCs and Humidity Sensors
M-based and FLL-based CDCs are widely used for
high-resolution applications. There are two types of M-
based CDCs: SC-based discrete time (DT) CDCs [2], [21]
[shown in Fig . 3(a)] and voltage-controlled oscillator (VCO)-
based continuous time (CT) CDCs [22] [shown in Fig. 3(b)].
In DT-Ms, conventional SC integrators based on static
inverter-based amplifiers consume large static currents and
require a common-mode feedback (CMFB) circuit that fur-
ther increases power consumption, thus reducing the energy
efficiency of high-order Ms [2], [21], [23]–[25]. The
other type, CT-Ms, are based on VCOs [22]. Due to
the advantages of a VCO’s high resonant frequency and
3562 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 56, NO. 12, DECEMBER 2021
Fig. 2. (a) Differential SAR CDC using inverter-based amplifiers [16].
(b) SAR CDC using a chain of inverter -based amplifiers [8].
Fig. 3. (a) DT-M CDC using an SC [2]. (b) CT-MCDCusinga
VCO-based integrator [22]. (c) FLL-based CDC using a WhB [4].
multibit quantization [26]–[28], a short conversion time is
easy to achieve. In addition, a VCO has an intrinsic inte-
gral function, so noise shaping can also be implemented to
ensure th e conversion resolution. However, this architecture
requires a certain bias current or voltage from the reference
source.
Another time-domain quantization approach is based on an
FLL. Jiang et al. [4] report an FLL-based analog front end
(AFE), as shown in Fig. 3(c), which can support capacitive
and resistive sensors simultaneously. It is realized by means
of an SC-based Wheatstone bridge (WhB). This type of CDC
can suppress nonlinearities and PVT variations from a VCO
through the FLL to ensure precise conversion. However, this
comes at the cost of high power consumption in the active
filter and bias circuits. Unlike in a CT-M with a VCO as
an integrator [22], [26]–[28], the VCO in an FLL-based CDC,
together with a time-to-digital converter (TDC) (including a
differentiator), acts only as a quantizer. Thus, there is a large
signal swing in the VCO input, which will introduce more
distortion and limit the CDC performance [26].
Fig. 4. (a) Zoom CDC using dual quantization [3]. (b) Zoom CDC using a
VCO-based integrator [29].
Fig. 5. Block diagram of the proposed zoom-CDC-based humidity sensor
architecture.
C. Hybrid CDCs and Humidity Sensors
To combine the merits of SARs and Ms, zoom-based
CDCs and humidity sensors have been reported [3], [29], [30].
Coarse quantization of the input capacitance by an SAR ADC
can effectively expand the dynamic range, and then, fine
quantization by a M can ensure the conversion resolution.
In addition, the zoom architecture can significantly reduce the
input swing of the M, thereby reducing the output swing
requirement for an OTA so that more energy-efficient OTA
schemes can be adopted. However, for either a DT zoom
CDC [3], as shown in Fig. 4(a), or a CT zoom CDC [29],
as shown in Fig. 4(b), high redundancy and a low-offset
comparator are usually required to ensure that the signal
falls in the M input range. Even so, it is difficult to
make such a comparator immune to off-chip parasitics and
interference from chip packages and p rinted circuit boards
(PCBs). In addition, in conventional zoom CDCs, the integra-
tor power is determined by the maximum input capacitance.
A larger input capacitance necessitates a higher OTA current to
ensure that the complete settling time is within a clock cycle.
Therefore, under the condition o f a fixed OTA bandwidth,
the OTA driving capability must be sufficiently high to cover
the worst case. However, for the smaller sensing capacitances
encountered in most cases, this design is far from optimal and
will result in significant power waste.
III. P
ROPOSED ENE RGY-EFFICIENT HUMIDIT Y SENSOR
Fig. 5 shows a block diagram o f the proposed energy-
efficient zoom-CDC-based humidity sensor. It consists of
a 6-bit SAR ADC, a 3rd-order M with an FIA array,
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