基于GaAs衬底的1.55μm InGaAs/InGaAsP多量子阱激光器结构的制备 - CSDN文库

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"Metamorphic Growth of 1.55 μm InGaAs/InGaAsP Multiple Quantum Wells Laser Structures on GaAs Substrates" 本文主要讲述了使用两步生长方法和热循环退火技术在GaAs基板上生长InGaAs/InGaAsP多量子阱（MQWs）激光器结构的研究。下面是该技术的知识点总结： 1. 低压金属有机化学气相沉积（MOCVD）技术：该技术用于生长InP缓冲层和MQWs激光器结构。MOCVD是一种常用的半导体制备技术，可以生产高质量的半导体材料。 2. 两步生长方法：该方法用于生长InP缓冲层，首先生长薄的低温InP层，然后生长厚的InP缓冲层。这种方法可以提高生长的InP缓冲层的质量。 3. 热循环退火技术：该技术用于改善InP缓冲层的质量。热循环退火可以减少InP缓冲层中的缺陷，提高其电学和光学性能。 4. InGaAs/InGaAsP MQWs激光器结构：该结构是本研究的核心部分。InGaAs/InGaAsP MQWs激光器结构可以在1.55 μm波长下工作，具有很高的激光输出功率和高效率。 5. GaAs基板：该基板是生长InGaAs/InGaAsP MQWs激光器结构的基础。GaAs基板具有良好的电学和热学性能，可以满足激光器结构的生长需求。 6. 激光器结构的测试结果：在准连续波（QCW）条件下，激光器结构的阈值电流为476 mA，斜率效率为0.15 mW/mA。这些结果表明，生长的InGaAs/InGaAsP MQWs激光器结构具有很高的激光输出功率和高效率。 7. 低温InP层的生长：低温InP层是生长InGaAs/InGaAsP MQWs激光器结构的关键部分。低温InP层可以提高激光器结构的质量和稳定性。 8. InP缓冲层的生长：InP缓冲层是生长InGaAs/InGaAsP MQWs激光器结构的基础。InP缓冲层可以提高激光器结构的质量和稳定性。 9. 激光器结构的应用前景：InGaAs/InGaAsP MQWs激光器结构可以应用于光纤通信、激光切割、医疗等领域。该结构的开发对激光技术和相关领域的发展具有重要意义。本文主要讲述了使用两步生长方法和热循环退火技术在GaAs基板上生长InGaAs/InGaAsP多量子阱激光器结构的研究。该研究具有重要的理论和实践意义，对激光技术和相关领域的发展具有重要影响。

Metamorphic growth of 1.55 μm InGaAs/InGaAsP

multiple quantum wells laser structures

on GaAs substrates

Xiaobo Li (李小波)

1

, Yongqing Huang (黄永清)

1,

*, Jun Wang (王俊)

1

,

Xiaofeng Duan (段晓峰)

1

, Ruikang Zhang (张瑞康)

2

, Yehong Li (李业弘)

1

,

Zheng Liu (刘正)

1

, Qi Wang (王琦)

1

, Xia Zhang (张霞)

1

, and Xiaomin Ren (任晓敏)

1,

**

1

Institute of Information Photonics and Optical Communications, Beijing University of Posts

and Telecommunications (BUPT); State Key Laboratory of Information Photonics

and Optical Communications (BUPT), Beijing 100876, China

2

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,

Chinese Academy of Sciences, Beijing 100083, China

*Corresponding author: yqhuang@bupt.edu.cn; **Corresponding author: xmren@bupt.edu.cn

Received September 29, 2014; accepted November 14, 2014; posted online February 24, 2015

We fabricate a GaAs-based InGaAs/InGaAsP multiple quantum wells (MQWs) laser at 1.55 μm. Using two-step

growth method and thermal cyclic annealing, a thin low-temperature InP layer and a thick InP buffer layer are

grown on GaAs substrates by low-pressure metal organic chemical vapor deposition technology. Then, high-

quality MQWs laser structures are grown on the InP buffer layer. Under quasi-continuous wave (QCW) con-

dition, a threshold current of 476 mA and slope efficiency of 0.15 mW/mA are achieved for a broad area device

with 50 μm wide strip and 500 μm long cavity at room-temperature. The peak wavelength of emission spectrum is

1549.5 nm at 700 mA. The device is operating for more than 2000 h at room-temperature and 600 mA.

OCIS codes: 140.0140, 160.6000, 140.5960.

doi: 10.3788/COL201513.031401.

Long-wavelength (1.55 or 1.31 μm) semiconductor lasers

are the essential devices in the fiber communication sys-

tems. InP-based optoelectronic devices are essential for

optical communication and have shown great potential

for long-distance fiber communication, such as lasers and

detectors

[1,2]

. Most of comme rcial 1.55 μm semiconductor

lasers are InP-based InGaAsP lasers. Unsatisfactorily,

some insufficient of InP substrates, such as high cost

and frailness, limit some applications in several areas

(large area integrated devices)

[3,4]

. GaAs substrates have

many good performances, such as relatively low cost

and good mechanical properties, which can make up for

the inadequacy of InP substrates. Moreover, GaAs-based

integrated circuit (IC) technology is relatively mature in

comparison with that of InP-based IC

[5,6]

. If GaAs elec-

tronic devices and InP-related optoelectronic devices are

combined with GaAs substrates, optoelectronic ICs could

be realized easily, and the optical fiber communication

systems can be made an important progress

[6]

. Therefore,

the technology of growth high-quality InP-based epilayers

on GaAs substrates have been attracted considerable

attention recently

[7,8]

.

However, a large number of threading dislocations will

appear when InP layers are directly grown more than

5 nm thick on GaAs substrates under normal growth

conditions, because there is 3.8% lattice mismatch of

InP/GaAs heterostructure

[8,9]

. In order to obtain high-

quality InP epilayers on GaAs substrates for devices,

the two-step growth method, thermal cyclic annealing

(TCA) and strained-layer superlattice (SLS) are widely

used

[3,7,8,10]

. In 1991, Kimura et al. fabricated a 1.3 μm

InGaAsP/InP quantum well (QW) laser and a PIN photo-

diode (PD) on GaAs substrates

[11]

. In our previous work,

we have completed some works on metamorphic growth of

InP epilayers on Ga As substrates by using two-step

growth method, TCA and SLS. In 2007, we grew high-

quality InP epilayers on GaAs substrates, in which the

full-widths at half-maximum (FWHM) of X-ray diffrac-

tion (XRD) ω scans were 219 arcsec for a 2.6 μm thick het-

eroepitaxial InP

[8,12]

. In 2009, we successfully fabricated a

PIN PD on GaAs substrate and the quantum efficiency of

the PD was 67.3% at 1549.5 nm

[13]

. In 2014, we fabricated

a high-efficiency dual-absorption InGaAs/InP PD on

GaAs substrates, in which the quantum efficiency was

64% at a wavelength of 1522 nm, beside, the 3 dB band-

width was 26 GHz

[14]

.

At present, four approaches are used for 1.55 μm range

GaAs-based lasers. The first one is InP/GaAs wafer bond-

ing technology. The device is based on fusion of the

InGaAsP active layer grown on InP substrates and the

AlGaAs Bragg reflectors grown on GaAs substrates

[15,16]

.

But, this technology is too complex and difficult to be used

to produce diode lasers with low-cost

[17]

. The second one is

growth of GaInNAsSb QW laser materials on GaAs sub-

strate

[18,19]

, while the peak wavelength was not easy to con-

trol. The third one is to use In(Ga)As/GaAs quantum

dots (QDs) as the active region

[20,21]

. The fourth one is

to use InGaAs/GaAs QW as the active r egion which is

grown on metamorphic InGaAs layers deposited on GaAs

substrates

[22]

. Both QDs and QW lasers have common

COL 13(3), 031401(2015) CHINESE OPTICS LETTERS March 10, 2015

1671-7694/2015/031401(5) 031401-1 © 2015 Chinese Optics Letters

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