M27C256B: 256KB UV & OTP EPROM for Microprocessor Systems

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M27C256B是一款由某制造商生产的256K位（32KBx8）的紫外线可擦除（UVEPROM）和一次编程（OTP）EPROM，适用于微处理器系统。这款芯片主要特点是其高效性和低功耗设计，它采用了FDIP28封装（带有窗口陶瓷封装和密封），具有透明的顶部以允许紫外线对存储的比特模式进行擦除。它的读操作在5V±10%供电下可以实现快速存取，大约只需要45ns的时间。该芯片的地址输入范围是A0-A14，数据输出端口为Q0-Q7。此外，它还配备了控制信号，如ChipEnable（E）用于启用或禁用芯片操作，以及OutputEnable（G）用于选择何时输出数据。为了编程，需要一个特定的电压，即12.75V±0.25V，编程时间大约为100μs/字，使用的是PRESTO II算法。电子签名包括制造商代码20h和设备代码8Dh，有助于识别芯片身份。对于那些只需要一次性编程且不需要后续擦除的应用，M27C256B还提供了PDIP32、PLCC32和TSOP28（8x13.4mm）等多种封装选项，以适应不同的电路板布局和尺寸需求。值得注意的是，M27C256B在活跃状态下的电流消耗相对较低，5MHz时的活动电流仅为30mA，而在待机状态下，电流消耗降低到100μA，这有助于延长电池寿命和优化系统能源管理。在使用时，确保电压稳定性和正确编程步骤至关重要，以保护数据的准确性和持久性。 M27C256B是一款高性能、低功耗的存储器解决方案，适合对存储容量大、稳定性要求高的嵌入式系统设计，同时提供了一定的灵活性以满足不同应用场景的需求。

Symbol Parameter Value Unit

Ambient Operating Temperature

(3)

–40 to 125

BIAS

Temperature Under Bias –50 to 125

STG

Storage Temperature –65 to 150

(2)

Input or Output Voltages (except A9) –2 to 7 V

Supply Voltage –2 to 7 V

(2)

A9 Voltage –2 to 13.5 V

Program Supply Voltage –2 to 14 V

Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings”

may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other

conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum

Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other

relevant quality documents.

2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC

voltage on Output is V

+0.5V with possible overshoot to V

+2V for a period less than 20ns.

3. Depends on range.

Table 2. Absolute Maximum Ratings

(1)

Mode E G A9 V

Q0 - Q7

Read V

Data Out

Output Disable V

Hi-Z

Program V

Pulse V

Data In

Verify V

Data Out

Program Inhibit V

Hi-Z

Standby V

XXV

Hi-Z

Electronic Signature V

Codes

Note:X =V

or V

= 12V

0.5V

Table 3. OperatingModes

Identifier A0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Hex Data

Manufacturer’s Code V

00100000 20h

Device Code V

10001101 8Dh

Table 4. ElectronicSignature

Two Line Output Control

BecauseEPROMsare usually used in largermem-

ory arrays, this product features a 2 line control

function which accommodates the use of multiple

memory connection. The two line control function

allows:

a. the lowest possible memory power dissipation,

b. complete assurance that output bus contention

will not occur.

Forthe mostefficientuse of thesetwo controllines,

E should be decoded and used as the primary

device selecting function, while G should be made

a common connection to all devices in the array

and connected to the READ line from the system

control bus. This ensures that all deselectedmem-

ory devices are in their low power standby mode

and that the output pins are only active when data

is desired from a particular memory device.

3/15

M27C256B

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