1/7
MDS35/50/80Series
DIODE / SCR MODULE
December 2000 - Ed: 4
MAIN FEATURES:
DESCRIPTION
Packaged in ISOTOP modules, the MDS Series is
based on the half-bridge SCR-diode configuration.
They are suitable for high power applications,
using phase controlled bridges, such as soft-start
circuits, welding equipment, motor speed
controller. The compactness of the ISOTOP
package allows high power density and optimized
power bus connections. Thanks to their internal
ceramic pad, they provide high voltage insulation
(2500V RMS), complying with UL standards (File
ref: E81734).
Symbol Value Unit
I
T(RMS)
50-70-85 A
V
DRM
/V
RRM
800 and 1200 V
I
GT
50 and 100 mA
ABSOLUTE RATINGS (limiting values)
Symbol Parameter
Value
Unit
35 50 80
I
T(RMS)
RMS on-state current 50 70 85 A
I
T(AV)
Average on-state current
(Single phase-circuit, 180° conduction angle per device)
Tc=85°C253555 A
I
TSM
I
FSM
Non repetitive surge peak on-state
current (Tj initial = 25°C)
tp = 8.3 ms
Tj = 25°C
420 630 730
A
tp = 10 ms 400 600 700
I
²
tI
²
t Value for fusing
tp = 10 ms Tj = 25°C 800 1800 2450
A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
=2xI
GT
,tr≤100 ns
F = 60 Hz Tj = 125°C 50 A/µs
I
GM
Peak gate current tp = 20 µs Tj = 125°C 4 A
P
G(AV)
Average gate power dissipation Tj = 125°C 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
-40to+150
-40to+125
°C
V
RGM
Maximum peak reverse SCR gate voltage 5 V
ISOTOP®
ISOTOP is a registred trademark of STMicroelectronics
PIN CONNECTIONS