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ADF41513 Data Sheet
Rev. 0 | Page 6 of 30
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter Rating
AV
DDx
to GND
1
−0.3 V to +3.6 V
V
P
to GND −0.3 V to +3.6 V
V
P
to AV
DDx
−0.3 V to +0.3 V
Digital Input/Output Voltage to GND −0.3 V to AV
DDx
+ 0.3 V
Analog Input/Output Voltage to GND −0.3 V to V
P
+ 0.3 V
RF
IN
A, RF
IN
B to GND −0.3 V to +3.6 V
IN
IN
1
REF
IN
to GND −0.3 V to +2.1 V
Operating Temperature Range
Industrial −40°C to +105°C
Storage Temperature Range −65°C to +125°C
Maximum Junction Temperature
Operational 125°C
Reflow Soldering
Peak Temperature 260°C
Time at Peak Temperature 40 sec
Electrostatic Discharge (ESD)
Charged Device Model 1250 V
Human Body Model 1500 V
Transistor Count
CMOS 215,726
Bipolar 1625
1
Approximately 13 dBm into a 50 Ω input.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
This device is a high performance RF IC with an electrostatic
discharge (ESD) rating of <2 kV, and the device is ESD sensitive.
Take proper precautions for handling and assembly.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
θ
JA
is the natural convection junction to ambient thermal
resistance measured in a one cubic foot sealed enclosure. θ
JC
is
the junction to case thermal resistance.
Table 4. Thermal Resistance
Package Type θ
JA
θ
JC
Unit
CP-24-8
1
48 38 °C/W
1
The thermal resistance values are defined per the JESD51 standard.
ESD CAUTION