英飞凌750V IGBT+肖特基二极管并联组件AIKQ120N75CP2 - CSDN文库

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Table 3 (continued) Characteristic values

Parameter Symbol Note or test condition Values Unit

Min. Typ. Max.

Zero gate-voltage collector

current

I

CES

V

CE

= 750 V, V

GE

=0 V T

vj

=25 °C 200 µA

T

vj

=175 °C 4000

Gate-emitter leakage

current

I

GES

V

CE

=0 V, V

GE

=20 V 100 nA

Transconductance g

fs

I

C

= 120 A, V

CE

=20 V 90 S

Short-circuit collector

current

I

SC

V

CC

≤ 470 V, V

GE

=15 V, t

SC

≤ 5 µs, Allowed

number of short circuits < 1000 , Time

between short circuits ≥ 1.0 s, T

vj

=25 °C

750 A

Input capacitance C

ies

V

CE

=25 V, V

GE

=0 V, f=100 kHz 13125 pF

Output capacitance C

oes

V

CE

=25 V, V

GE

=0 V, f=100 kHz 337 pF

Reverse transfer

capacitance

C

res

V

CE

=25 V, V

GE

=0 V, f=100 kHz 59 pF

Gate charge Q

G

I

C

= 120 A, V

GE

=15 V, V

CC

= 600 V, V

CE

=600 V 731 nC

Turn-on delay time t

don

V

CE

= 470 V, V

GE

= -8/15 V,

R

Gon

= 5 Ω, R

Go

= 5 Ω,

L

σ

=50 nH, C

σ

=30 pF

T

vj

= 25 °C,

I

C

= 120 A

71 ns

T

vj

= 175 °C,

I

C

= 120 A

50

Rise time (inductive load) t

r

V

CE

= 470 V, V

GE

= -8/15 V,

R

Gon

= 5 Ω, R

Go

= 5 Ω,

L

σ

=50 nH, C

σ

=30 pF

T

vj

= 25 °C,

I

C

= 120 A

69 ns

T

vj

= 175 °C,

I

C

= 120 A

68

Turn-o delay time t

do

V

CE

= 470 V, V

GE

= -8/15 V,

R

Gon

= 5 Ω, R

Go

= 5 Ω,

L

σ

=50 nH, C

σ

=30 pF

T

vj

= 25 °C,

I

C

= 120 A

244 ns

T

vj

= 175 °C,

I

C

= 120 A

226

Fall time (inductive load) t

f

V

CE

= 470 V, V

GE

= -8/15 V,

R

Gon

= 5 Ω, R

Go

= 5 Ω,

L

σ

=50 nH, C

σ

=30 pF

T

vj

= 25 °C,

I

C

= 120 A

50.5 ns

T

vj

= 175 °C,

I

C

= 120 A

67

Turn-on energy

1)

E

on

V

CE

= 470 V, V

GE

= -8/15 V,

R

Gon

= 5 Ω, R

Go

= 5 Ω,

L

σ

=50 nH, C

σ

=30 pF

T

vj

= 25 °C,

I

C

= 120 A

6.82 mJ

T

vj

= 175 °C,

I

C

= 120 A

7.3

Turn-o energy E

o

V

CE

= 470 V, V

GE

= -8/15 V,

R

Gon

= 5 Ω, R

Go

= 5 Ω,

L

σ

=50 nH, C

σ

=30 pF

T

vj

= 25 °C,

I

C

= 120 A

3.8 mJ

T

vj

= 175 °C,

I

C

= 120 A

4.7

(table continues...)

AIKQ120N75CP2

EDT2 IGBT

2 IGBT

Datasheet 4 Revision 1.10

2022-03-16

剩余15页未读，继续阅读

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