IGBT故障诊断与保护方法的研究综述

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"这篇文献是IEEE Transactions on Industry Applications期刊2009年9-10月刊中的文章，主题是对IGBT（绝缘栅双极型晶体管）故障诊断与保护方法的文献综述。作者Bin Lu和Santosh K. Sharma深入探讨了用于三相功率逆变器的IGBT故障诊断技术，特别关注开路故障和短路故障的诊断方法。" 本文主要讨论了IGBT在电力电子设备，尤其是三相功率逆变器中的重要性和故障问题。由于IGBT在工业中广泛应用，如电机驱动和电力质量控制，其故障对变频交流驱动器的可靠性影响显著。据统计，大约38%的变频驱动故障与功率器件失效有关。一、引言文中首先强调了电压源逆变器（VSIs）在电机驱动和电力质量应用中的普遍性，并指出IGBT故障对系统运行的影响。作者指出，了解并实施有效的故障诊断和保护策略对于提高系统整体性能和稳定性至关重要。二、故障诊断方法文章详细评估和总结了21种针对开路故障的方法和10种针对短路故障的方法。这些方法基于它们的性能和实现难度进行了分析。开路故障通常涉及IGBT的栅极-发射极开路或集电极-发射极开路，而短路故障则可能发生在IGBT内部或其与外部电路之间。三、门极误触发故障及其诊断除了常见的开路和短路故障，门极误触发故障也被简要提及。这类故障可能导致IGBT无法正常开关，影响逆变器的运行效率和稳定性。文中概述了针对门极误触发故障的一些诊断策略。四、推荐方法在综合考虑各种方法的优缺点后，作者提出了未来研究的有前途的方法。这些建议可能包括改进现有诊断算法，提高故障检测速度，以及开发更适应复杂工况的保护机制。五、索引术语文章的索引涵盖了故障诊断、门极误触发故障、IGBT、开路故障、功率逆变器和短路故障等关键概念，方便读者根据特定需求进行检索。通过这篇综述，读者可以了解到当前IGBT故障诊断领域的研究现状和未来发展方向，为设计更可靠的电力电子系统提供参考。对于从事IGBT相关工作或对故障诊断感兴趣的工程师和技术人员来说，这是非常有价值的信息资源。

1770 IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, VOL. 45, NO. 5, SEPTEMBER/OCTOBER 2009

A Literature Review of IGBT Fault Diagnostic

and Protection Methods for Power Inverters

Bin Lu, Senior Member, IEEE, and Santosh K. Sharma

Abstract—This paper presents a survey on existing methods for

fault diagnosis and protection of insulated gate bipolar transistors

with special focus on those used in three-phase power inverters.

Twenty-one methods for open-circuit faults and ten methods for

short-circuit faults are evaluated and summarized, based on their

performance and implementation efforts. The gate-misﬁring faults

and their diagnostic methods are also brieﬂy discussed. Finally, the

promising methods are recommended for future work.

Index Terms—Fault diagnosis, gate-misﬁring fault, insulated

gate bipolar transistor (IGBT), open-circuit fault, power inverter,

short-circuit fault.

I. INTRODUCTION

OLTAGE-SOURCE inverters (VSIs) are widely used in

motor drive and power quality applications. It is estimated

that about 38% of the faults in variable-speed ac drives in

industry are due to failures of power devices [1]. Most of these

inverters use insulated gate bipolar transistors (IGBTs) as the

power device because of their high voltage and current ratings

and ability to handle short-circuit currents for periods exceed-

ing 10 μs. Although IGBTs are rugged, they suffer failures due

to excess electrical and thermal stress that are experienced in

many applications. IGBT failures can be broadly categorized

as open-circuit faults, short-circuit faults, and intermittent gate-

misﬁring faults. Various IGBT fault diagnostic and protection

methods have been developed during the last decade. The main

purpose of this paper is to conduct a comprehensive review of

these works.

II. G

ATE-DRIVE OPEN-CIRCUIT FAULT

A gate-drive open-circuit fault may happen due to lifting of

bonding wires caused by thermic cycling. It may be caused

by a driver fault or a short-circuit-fault-induced IGBT rupture.

Open-circuit faults lead to dc current offset in both the faulty

and healthy phase. The interaction between the dc component

and the ﬁeld generates a pulsating torque at the stator current

frequency, which may substantially reduce the maximum av-

erage torque available to the drive [2]. The dc currents also

Paper 2008-PEDCC-115, presented at the 2008 Industry Applications So-

ciety Annual Meeting, Edmonton, AB, Canada, October 5–9, and approved

for publication in the IEE E T

RANSACTIONS ON INDUSTRY APPLICATIONS

by the Power Electronics Devices and Components Committee of the IEEE

Industry Applications Society. Manuscript submitted for review October 27,

2008 and released for publication April 3, 2009. First published July 14, 2009;

current version published September 18, 2009.

B. Lu is with the Innovation Center, Eaton Corporation, Milwaukee, WI

53216 USA (e-mail: binlu@ieee.org).

S. K. Sharma is with the India Engineering Center, Eaton Corporation,

Pune 411014, India (e-mail: santoshkrsharma@eaton.com).

Digital Object Identiﬁer 10.1109/TIA.2009.2027535

TAB LE I

EFECT TRANSISTOR LOCALIZATION BY PARK’S VECTOR METHOD

generate unequal stress in the upper and lower transistors.

These effects may cause secondary faults in the inverter, motor,

or load. The voltages and currents carry the fault signatures and

hence can be analyzed to detect and locate the fault. Open-

circuit faults generally do not cause system shutdown, but

degrade its performance. Therefore, these diagnostic methods

can be used in device-fault-tolerant systems.

A. Detection Methods

1) Park’s Vector Method [3]: In this method, open-circuit

fault detection and defect transistor localization are accom-

plished by calculating the position of the current trajectory’s

midpoint, which is the mean value of the ac current space vector

over one period.

First, the three-phase average currents are calculated. Then,

Park’s vector transformation is applied to obtain the magnitude

and phase angle of the ac currents in t he complex domain.

For a normal system, the mean (magnitude) value is zero and

the space vector trajectory is a circle. If a fault occurs, the

magnitude of the space vector is nonzero and greater than a

threshold. The defect transistor is i dentiﬁed by the phase angle,

as shown in Table I.

2) Normalized DC Current Method [4], [5]: This is an

improvement over the Park’s Vector Method, which has a

major drawback of being load dependent. To make the fault

detection independent of load, normalized dc current is used

and is given by

a,b,c





1,(a,b,c)

+ b

1,(a,b,c)



(1)

where I

a,b,c

is the average phase current, and a

1,(a,b,c)

and

1,(a,b,c)

are the fundamental coefﬁcients of the three-phase

currents. This normalized value is calculated for each phase.

To identify the faulty IGBT, the resulting residual, γ

a,b,c

compared with a threshold 0.45, reported to be a universal

value derived from experience.

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