新型半波耦合器实现的简单可调谐半导体激光器

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"基于新型半波耦合器的简单紧凑的可调谐半导体激光器" 这篇研究论文探讨了基于新型半波耦合器的简单且紧凑的可调谐半导体激光器的设计与实现。这类激光器在光学工程领域具有重要的应用价值，尤其是在光通信、光谱分析和光学数据处理等方面。论文的作者包括Jian-Jun He、Xiaohai Xiong、Jianjun Meng等人，他们分别来自中国浙江大学的现代光学仪器国家重点实验室、集成光电子研究中心和光学工程系。首先，新型半波耦合器是实现高性能可调谐半导体激光器的关键组件。这种耦合器能够在保持单模激光的同时，提供高的边模抑制比（Side-Mode Suppression Ratio, SMSR），这有助于提高激光器的稳定性和光束质量。通过使用这种耦合器，研究人员能够在V型腔和环形FP（Fabry-Pérot）腔中实现半波耦合，从而优化激光器的性能。其次，论文展示了单电极控制的宽波长调谐技术，利用 Vernier 效应，可以实现对激光器波长的精确调整。这种调谐方式简化了设备的复杂性，降低了成本，并提高了调谐范围。实验中，通过进一步利用温度诱导的增益光谱位移，实现了全带50个通道，每个通道间隔100GHz的调谐，这是在半导体激光器中实现宽带调谐的重要进展。此外，这些激光器被封装成小型9引脚TO封装（TOSA，Transmitter Optical Sub-Assembly），这有利于其在实际应用中的集成和小型化。同时，为了支持波长调谐和直接调制，研究团队还开发了相应的电子驱动电路，进一步提升了激光器的实用性。这篇研究论文展示了基于新型半波耦合器的可调谐半导体激光器在设计和功能上的创新。这种激光器不仅结构简单、紧凑，而且调谐范围广，调谐精度高，具有良好的封装和驱动方案，为未来光电子设备的发展提供了新的可能性。这些进展对于推动光通信系统的带宽提升、增加网络容量以及优化光谱分析设备性能等方面具有重要意义。

Simple and compact tunable semiconductor lasers

based on novel half-wave coupler

Jian-Jun He*

a,b

, Xiaohai Xiong

, Jianjun Meng

, Lin Wu

, Sen Zhang

, Xiaolu Liao

, and Li Zou

State Key Laboratory of Modern Optical Instrumentation, Centre for Integrated Optoelectronics,

Department of Optical Engineering, Zhejiang University, Hangzhou, China 310027

Lightip Technologies (Hangzhou) Co. Ltd. , 11 Xi-Yuan Eighth Road, D-502

Hangzhou, China 310030

ABSTRACT

Widely tunable semiconductor lasers based on a novel half-wave coupler are presented. They have been implemented in

the form of half-wave coupled V-cavity and ring-FP cavities. By using the novel half-wave coupler, single-mode lasing

with high side-mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning with

Vernier effect is demonstrated. The full-band tuning of 50 channels with 100GHz spacing is realized by further

employing temperature induced gain spectrum shift.

The laser is packaged into a small-form-factor 9-pin box

TOSA, and the electronic driver has been developed for the wavelength tuning and direct modulation.

The

advantages of compactness, fabrication simplicity, easy wavelength control and direct modulation allow the tunable

lasers to be used in low-cost access and datacenter networks, as well as in portable devices for spectroscopic analysis.

Keywords: Semiconductor laser, tunable laser, integrated optics.

1. INTRODUCTION

Next-generation intelligent optical network and software defined network (SDN) will benefit largely from low-cost

widely wavelength tunable semiconductor lasers. Over the last two decades, high performance tunable lasers have been

developed based on complex structures such as sampled grating distributed Bragg reflector (SGDBR) [1], superstructure

grating DBR [2], digital supermode DBR [3], modulated grating Y-branch [4], and so on. In addition to fabrication

complexity involving non-uniform gratings and multiple epitaxial growths, multiple electrodes with complex control

algorithms are usually required for wavelength tuning. As a result, tunable lasers are currently very expensive and mostly

used in long-haul transmission links. With the dense wavelength division multiplexing (DWDM) technology extending

towards access and data center networks, the cost reduction and operational simplicity become more and more important.

Low-cost tunable lasers are also essential for meeting the emerging demands of portable devices for biomedical analyses,

food safety and environmental monitoring based on spectroscopic measurements.

Recently, a compact tunable laser based on a novel half-wave coupler was proposed and experimentally demonstrated

[5-7]. Single-electrode controlled wide-band wavelength tuning was realized with an excellent side-mode suppression

ratio of about 40dB. By combining temperature-induced gain spectrum shift with current controlled Vernier tuning

mechanism, the tuning range was extended to over 50 channels. They are all-active devices with no epitaxial regrowth.

The fabrication process is similar to simple Fabry-Perot (FP) lasers and the device size is only about 0.5×0.3 mm

. High

speed direct modulation has also been demonstrated. Tunable half-wave coupled ring-FP lasers have also been

demonstrated based on similar principle. In this paper, the principle, design, and experimental results of the tunable

lasers based on half-wave coupled cavities are reviewed.

2. HALF-WAVE COUPLED V-CAVITY LASERS

Figure 1 shows the top view of a V-cavity laser. It comprises a fixed gain cavity and a channel selector cavity with

different optical path lengths, which form V-shaped branches with a reflective 2x2 half-wave coupler. The half-wave

coupler, in which the cross-coupling coefficient has a π phase relative to the bar-coupling coefficient, is important for

achieving high SMSR. A conventional directional coupler or self-imaging multimode interference coupler, in which the

cross-coupling coefficient has a relative phase of π/2 (quarter-wave) with respect to the bar-coupling coefficient, would

Invited Paper

Smart Photonic and Optoelectronic Integrated Circuits XVII, edited by Louay A. Eldada, El-Hang Lee, Sailing He,

Proc. of SPIE Vol. 9366 93660C-1

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