Spansion LLC开发的非易失性闪存技术概述

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"《Flash存储器概述.pdf》是一份由Spansion LLC开发中的产品介绍文档，旨在帮助潜在用户评估该技术。文档强调了Flash存储器作为计算机系统内存的一种重要类型，它在电子设备中扮演着关键角色。本文档着重讨论了两种主要的记忆类型：挥发性记忆和非挥发性记忆。挥发性记忆，如随机访问内存(RAM)，在设备通电时能快速读写数据，非常适合临时存储和处理过程中的数据。当电源关闭时，其内容会立即消失，因此这类记忆需要持续供电来保持信息。为了在设计系统时考虑到这一特性，用户必须提前与工厂联系以确保兼容性和适当的集成。非挥发性记忆，如闪存(Flash)，则具有显著的不同。它即使在无电源情况下也能保持数据，这对于存储操作系统、应用程序设置和其他长期存在的信息至关重要。尽管非挥发性内存的数据更改速度较慢，但它的持久性使得它在需要长期存储的场景中十分有用，如固态硬盘(SSD)中常见的NAND Flash。在《Flash存储器概述.pdf》中，还可能详细介绍了Flash存储器的工作原理、优缺点、存储容量等级、耐久性和编程方法。随着技术的进步，Flash存储器已经成为移动设备、嵌入式系统和数据中心存储的关键组成部分，因其低功耗、快速擦除和编程能力而备受青睐。然而，由于该文档是草案状态，Spansion LLC明确表示可能会在未通知的情况下对产品进行修改或停止开发，因此在实际应用中，用户需要获取最新的产品规格和官方支持。这份文档提供了深入理解Flash存储器技术的基础，并对未来的产品设计决策具有指导价值。"

This document contains information on one or more products under development at Spansion LLC. The information is intended to help you evaluate this product. Do not

design in this product without contacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed product without notice.

Publication Number FlashOverview_AN Revision A Amendment 0 Issue Date November 10, 2005

Introduction

All computer-based systems contain memory. Memory is where information is stored

while waiting to be operated on by the Central Processing Unit (CPU) of the computer .

There are two types of memory. They are volatile memory and non-volatile memory.

Volatile memory retains its information only while power is applied to the memory de-

vice. The contents of this memory type may be easily and quickly changed. Non-volatile

memory retains its information even when no power is applied to the memory device.

Although the information in most non-volatile memories may be changed, the process

involved is much slower than for volatile memory.

Volatile Memory

Volatile memory loses its contents when the device loses power . Random Access Mem-

ory (RAM) is the traditional name used for volatile memory. The name refers to the

ability to access any location of the memory quickly with no particular order of accesses

needed. Static RAM (SRAM) and Dynamic RAM (DRAM) are two examples of volatile

memories that have this characteristic.

SRAM typically uses six transistors for each memory bit (cell) to retain data as long as

power is being supplied. This makes each memory cell relatively large and limits SRAM

to use in lower density memories. SRAM can provide faster access to data, use less

standby power , and tends to be more expensive than DRAM.

DRAM uses a single transistor and a small capacitor for each bit of memory. Since ca-

pacitors do not hold a charge indefinitely, DRAM cells must be frequently recharged

(refreshed) to avoid losing the contents. These smaller memory cells allow DRAM to be

used for high density, low cost memories, but are typically slower than SRAM.

Flash Memory: An Overview

Application Note

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