英飞凌TLE94106ES半桥驱动器规格手册：专为汽车应用设计

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TLE94106ES是一款由英飞凌(INFINEON)生产的高性能半桥驱动器芯片，专为汽车应用设计。该芯片的主要特点包括： 1. **六个半桥功率输出**：芯片提供六个独立的半桥功率输出，适用于需要多通道控制的高功率驱动系统，如HVAC系统的风扇电机、车窗或门的电动驱动、以及LED照明系统的驱动。 2. **极低的待机功耗**：在睡眠模式下，TLE94106ES能有效节省电能，这对于电池供电或能源管理至关重要的汽车电子设备来说，具有显著的优势。 3. **兼容性设计**：支持3.3V和5V电源输入，且具有电压超调保护，确保在不同电源条件下稳定工作。 4. **保护功能强大**：每个输出都配备有过载和短路保护，能够防止因电流过大或电路故障导致的损坏。独立诊断能力使得能快速识别各个输出的问题，例如过流和开路状态。 5. **诊断灵活性**：输出可以设置不同的开路阈值，对于高侧（HS1和HS2）输出尤其适用，并且在通电状态下也能进行开路诊断，提高了系统可靠性。 6. **高效通信接口**：采用16位标准SPI接口，支持菊花链连接和帧内响应，方便进行控制和故障检测，大大简化了系统设计。 7. **快速诊断**：通过全局错误标志实现快速故障诊断，有助于实时监控和及时处理问题。 8. **PWM功能**：支持80Hz、100Hz和200Hz的PWM信号输出，分辨率高达8位，可精确控制驱动负载。 9. **温度管理和保护**：内置过热预警和保护机制，保证芯片在高温环境下仍能正常工作，防止过热损坏。 10. **电压锁定保护**：防止电压过高或过低对芯片造成损害，提供了全面的电压保护措施。 11. **交叉电流保护**：防止电流在多个输出之间互相干扰，保证系统稳定性。 TLE94106ES因其出色的性能和广泛的应用场景，如HVAC扇叶电机、汽车继电器控制、镜子调整和折叠、以及LED驱动等，被广泛应用于汽车电子系统，特别符合汽车行业的严格标准，如AEC-Q100，确保了在严苛的汽车环境中的可靠性和耐用性。

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Datasheet 13 1.0

2018-01-08

TLE94106ES

General Product Characteristics

3.4 Electrical Characteristics

Table 5 Electrical Characteristics, V

=5.5 V to 18 V, V

= 3.0V to 5.5V, T

= -40°C to +150°C, EN= HIGH,

OUTn

= 0 A; Typical values refer to V

= 5.0 V, V

= 13.5 V and T

= 25 °C unless otherwise

specified; all voltages with respect to ground, positive current flowing into pin (unless

otherwise specified)

Parameter Symbol Values Unit Note or

Test Condition

Number

Min. Typ. Max.

Current Consumption, EN = GND

Supply Quiescent current I

– 0.5 2 µA -40°C ≤ T

≤ 85°C P_4.4.1

Logic supply quiescent current I

DD_Q

– 0.1 1 µA -40°C ≤ T

≤ 85°C P_4.4.2

Total quiescent current I

DD_Q

– 0.6 3 µA -40°C ≤ T

≤ 85°C P_4.4.3

Current Consumption, EN=HIGH

Supply current I

– 0.5 1 mA Power drivers and

power stages are

off

P_4.4.4

Supply current I

S_HSON

– 4.5 9 mA All high-sides ON

P_4.4.101

Logic supply current I

–1.53mASPI not active P_4.4.5

Logic supply current I

DD_RUN

–5–mASPI 5MHz

P_4.4.6

Total supply current I

DD_RUN

–5.5–mASPI 5MHz

P_4.4.7

Over- and Undervoltage Lockout

Undervoltage Switch ON

voltage threshold

UV ON

4.25 – 5.25 V V

increasing P_4.4.8

Undervoltage Switch OFF

voltage threshold

UV OFF

4–5.0VV

decreasing P_4.4.9

Undervoltage Switch ON/OFF

hysteresis

UV HY

–0.25–VV

UV ON

- V

UV OFF

P_4.4.10

Overvoltage Switch OFF voltage

threshold

OV OFF

21 – 25 V V

increasing P_4.4.11

Overvoltage Switch ON voltage

threshold

OV ON

20 – 24 V V

decreasing P_4.4.12

Overvoltage Switch ON/OFF

hysteresis

OV HY

–1–VV

OV OFF

- V

OV ON

P_4.4.13

Power-On-Reset V

DD POR

2.40 2.70 2.90 V V

increasing P_4.4.14

Power-Off-Reset V

DD POffR

2.35 2.65 2.85 V V

decreasing P_4.4.15

Power ON/OFF hysteresis V

DD POR HY

–0.05–VV

DD POR

- V

DD POffR

P_4.4.98

Static Drain-source ON-Resistance (High-Side or Low-Side)

High-Side or Low-Side R

DSON

(all outputs)

DSON_HB_25C

– 850 1200 mΩ I

OUT

= ±0.5 A;

= 25 °C

P_4.4.16

High-Side or Low-Side R

DSON

(all outputs)

DSON_HB_150

– 1400 1800 mΩ I

OUT

= ±0.5 A;

= 150 °C

P_4.4.17

Datasheet 14 1.0

2018-01-08

TLE94106ES

General Product Characteristics

High-Side R

DSON

(HS1 and HS2 in LED mode)

DSON_HI_HB_

25C

– 950 1300 mΩ

OUT

= ±0.1 A;

= 25 °C

P_4.4.18

High-Side R

DSON

(HS1 and HS2 in LED mode)

DSON_HI_HB_

150C

– 1500 2000 mΩ

OUT

= ±0.1 A;

= 150 °C

P_4.4.19

Output Protection and Diagnosis of high-side (HS) channels of half-bridge output

HS Overcurrent Shutdown

Threshold

SD_HS

-1.4 -1.1 -0.9 A See Figure 7 P_4.4.89

Difference between shutdown

and limit current

LIM_HS

SD_HS

-1.2 -0.6 0 A

LIM_HS

| ≥ |I

SD_HS|

See Figure 7

P_4.4.21

Overcurrent Shutdown filter

time

dSD_HS

15 19 23 µs

P_4.4.22

Open Load Detection Current I

OLD1_HS

-15 -8 -3 mA - P_4.4.23

Open Load Detection filter time t

OLD1_HS

2000 3000 4000 µs

P_4.4.24

Open Load Detection Current

for LED mode

(HS1 & HS2)

OLD2_HS1,2

-3.2 -2 -0.5 mA Bit OL_SEL_HS1 =

1, OL_SEL_HS2 = 1

P_4.4.25

Open Load Detection filter time

for LED mode

(HS1 & HS2)

OLD2_HS1,2

100 200 300 µs Bit OL_SEL_HS1 =

1, OL_SEL_HS2 = 1;

P_4.4.26

Output Protection and Diagnosis of low-side (LS) channels of half-bridge output

LS Overcurrent Shutdown

Threshold

SD_LS

0.9 1.1 1.4 A Figure 8 P_4.4.104

Difference between shutdown

and limit current

LIM_LS

SD_LS

00.61.2A

LIM_LS

≥ I

SD_LS

Figure 8

P_4.4.28

Overcurrent Shutdown filter

time

dSD_LS

15 19 23 µs

P_4.4.29

Open Load Detection Current I

OLD_LS

3815mA- P_4.4.30

Open Load Detection filter time t

OLD_LS

2000 3000 4000 µs

P_4.4.31

Outputs OUT(1...n) leakage current

HS leakage current in off state I

QLHn_NOR

-2 -0.5 – µA V

OUTn

= 0V ; EN=High P_4.4.32

HS leakage current in off state I

QLHn_SLE

-2 -0.5 – µA V

OUTn

= 0V; EN=GND P_4.4.33

LS Leakage current in off state I

QLLn_NOR

–0.52µAV

OUTn

= V

; EN=High P_4.4.34

LS Leakage current in off state I

QLLn_SLE

–0.52µAV

OUTn

= V

; EN=GND P_4.4.35

Output Switching Times. See Figure 9 and Figure 10.

Slew rate of high-side and low-

side outputs

VOUT

/ dt 0.1 0.45 0.75 V/µs Resistive load =

100Ω; V

=13.5V

P_4.4.36

Table 5 Electrical Characteristics, V

=5.5 V to 18 V, V

= 3.0V to 5.5V, T

= -40°C to +150°C, EN= HIGH,

OUTn

= 0 A; Typical values refer to V

= 5.0 V, V

= 13.5 V and T

= 25 °C unless otherwise

specified; all voltages with respect to ground, positive current flowing into pin (unless

otherwise specified) (cont’d)

Parameter Symbol Values Unit Note or

Test Condition

Number

Min. Typ. Max.

Datasheet 15 1.0

2018-01-08

TLE94106ES

General Product Characteristics

Output delay time high side

driver on

dONH

52035µsResistive load =

100Ω to GND

P_4.4.37

Output delay time high side

driver off

dOFFH

15 45 75 µs Resistive load =

100Ω to GND

P_4.4.38

Output delay time low side

driver on

dONL

52035µsResistive load =

100Ω to VS

P_4.4.39

Output delay time low side

driver off

dOFFL

15 45 75 µs Resistive load =

100Ω to VS

P_4.4.40

Cross current protection time,

high to low

DHL

100 130 160 µs Resistive load =

100Ω

P_4.4.41

Cross current protection time,

low to high

DLH

100 130 160 µs Resistive load =

100Ω

P_4.4.42

Input Interface: Logic Input EN

High-input voltage V

ENH

0.7 *

–– V – P_4.4.43

Low-input voltage V

ENL

– – 0.3 *

V– P_4.4.44

Hysteresis of input voltage V

ENHY

– 500 – mV

P_4.4.45

Pull down resistor R

PD_EN

20 40 70 kΩ V

= 0.2 x V

P_4.4.46

SPI frequency

Maximum SPI frequency f

SPI,max

––5.0MHz

P_4.4.47

SPI INTERFACE: Delay Time from EN rising edge to first Data in

Setup time t

set

– – 150 µs

See Figure 14 P_4.4.48

SPI INTERFACE: Input Interface, Logic Inputs SDI, SCLK, CSN

H-input voltage threshold V

0.7 *

–– V – P_4.4.50

L-input voltage threshold V

– – 0.3 *

V– P_4.4.51

Hysteresis of input voltage V

IHY

– 500 – mV

P_4.4.52

Pull up resistor at pin CSN R

PU_CSN

30 50 80 kΩ V

CSN

= 0.7 x V

P_4.4.53

Pull down resistor at pin SDI,

SCLK

PD_SDI,

PD_SCLK

20 40 70 kΩ V

SDI

, V

SCLK

= 0.2 x V

P_4.4.54

Input capacitance at pin CSN,

SDI or SCLK

–1015pF0V < V

< 5.25V

P_4.4.55

Input Interface, Logic Output SDO

H-output voltage level V

SDOH

0.4

0.2

–VI

SDOH

= -1.6 mA P_4.4.56

Table 5 Electrical Characteristics, V

=5.5 V to 18 V, V

= 3.0V to 5.5V, T

= -40°C to +150°C, EN= HIGH,

OUTn

= 0 A; Typical values refer to V

= 5.0 V, V

= 13.5 V and T

= 25 °C unless otherwise

specified; all voltages with respect to ground, positive current flowing into pin (unless

otherwise specified) (cont’d)

Parameter Symbol Values Unit Note or

Test Condition

Number

Min. Typ. Max.

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