新型H+离子传感器：基于门控横向BJT对

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"基于门控横向BJT对的新型H +离子传感器" 本文介绍了一种新型的H +离子传感器，该传感器采用了门控横向双极结型晶体管（BJT）对，无需传统的参考电极即可运行。这个创新设计解决了经典离子敏感场效应晶体管（ISFET）在制造过程中存在的问题，特别是关于笨重且易碎的参考电极材料的挑战。ISFET的小型化特性使其在传感器应用中极具吸引力，但制造时与参考电极的集成常常成为难题，尤其是在需要将参考电极与传感器主体分离的情况下。提出的传感器器件由两个侧向BJT组件构成，其中一个具有硅化物层，另一个则没有。这两个组件协同工作在金属氧化物半导体场效应晶体管（MOSFET）-BJT混合模式下，通过调整发射极电压和基极电流来控制。这种设计允许传感器对H +离子浓度的变化做出响应，而且由于两个组件的敏感度差异，它们可以互相作为参考，从而提高测量的稳定性和准确性。在实验中，使用不同pH值的缓冲溶液来测试传感器的性能，结果显示该设备的灵敏度大约为0.175 A / pH。这一结果证明了新设计的有效性，并且暗示了降低基于ISFET的传感器制造成本的巨大潜力。此外，无需参考电极的特性使得传感器结构更简单，可能进一步促进其在生物医学、环境监测和其他领域的广泛应用。总结来说，这项研究提出了一种新颖的H +离子检测方法，利用门控横向BJT对，不仅克服了传统ISFET在制造上的障碍，还提高了传感器的灵敏度和实用性。这种技术的进步对于推动离子传感器的小型化、降低成本以及提高其在实际应用中的可靠性具有重要意义。

Article

Novel H

-Ion Sensor Based on a Gated Lateral

BJT Pair

Heng Yuan

*, Jixing Zhang

, Chuangui Cao

, Gangyuan Zhang

and Shaoda Zhang

Received: 29 October 2015; Accepted: 18 December 2015; Published: 23 December 2015

Academic Editor: W. Rudolf Seitz

Science and Technology on Inertial Laboratory, Beihang University, No. 37 Xueyuan Road, Beijing 100191,

China; zhangjixing@buaa.edu.cn (J.Z.); caochuangui@buaa.edu.cn (C.C.);

zhanggangyuan@buaa.edu.cn (G.Z.)

Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, No. 422 South Siming

Road, Xiamen 361005, China

* Correspondences: hengyuan@buaa.edu.cn (H.Y.); shaodazhang@hotmail.com (S.Z.);

Tel.: +86-10-8233-9603 (H.Y.); +86-592-218-3063 (S.Z.); Fax: +86-10-8231-6813 (H.Y.); +86-592-218-7196 (S.Z.)

Abstract: An H

-ion sensor based on a gated lateral bipolar junction transistor (BJT) pair that

can operate without the classical reference electrode is proposed. The device is a special type of

ion-sensitive ﬁeld-effect transistor (ISFET). Classical ISFETs have the advantage of miniaturization,

but they are difﬁcult to fabricate by a single fabrication process because of the bulky and brittle

reference electrode materials. Moreover, the reference electrodes need to be separated from the

sensor device in some cases. The proposed device is composed of two gated lateral BJT components,

one of which had a silicide layer while the other was without the layer. The two components

were operated under the metal-oxide semiconductor ﬁeld-effect transistor (MOSFET)-BJT hybrid

mode, which can be controlled by emitter voltage and base current. Buffer solutions with different

pH values were used as the sensing targets to verify the characteristics of the proposed device.

Owing to their different sensitivities, both components could simultaneously detect the H

-ion

concentration and function as a reference to each other. Per the experimental results, the sensitivity

of the proposed device was found to be approximately 0.175 µA/pH. This experiment demonstrates

enormous potential to lower the cost of the ISFET-based sensor technology.

Keywords: gated lateral BJT; MOSFET–BJT hybrid; ion sensor; ISFET

1. Introduction

The reference electrode that supplies the reference value for sensor data analysis is one of the

most important components in a classical ion-sensitive transistor (IST) system. The IST has much

been used in not only environmental detection, but also in biosensors [1–4]. With the development

of sensor technology, semiconductor-based sensors have been extensively studied because of their

perceived advantages such as low cost, small size, and ease of mass production. However,

although the ion-sensitive ﬁeld-effect transistor (ISFET) is based on the semiconductor-based sensor

technology, the above advantages are not imputable to the current reference electrode technology. The

primary reason is that the classical ISFET, which based on the metal-oxide semiconductor ﬁeld-effect

transistor (MOSFET) structure is difﬁcult to operate under room temperature without gate bias, and

the ISFET requires the reference electrode to supply a stable bias to the gate with a long lifetime, which

requires Pt and Ag/AgCl reference electrodes [5]. These classical reference electrodes are additional

components that increase the size of the device and make it inconvenient to use. Many researchers

have improved the reference electrode by focusing on fabrication of the surface of the device [6,7],

which is a well-known method for ISFET-based sensor fabrication, but this type of reference electrode

Sensors 2016, 16, 14; doi:10.3390/s16010014 www.mdpi.com/journal/sensors

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