高分辨率柔性AMOLED显示器：金属氧化物TFT集成栅极驱动技术

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"金属氧化物TFT的高分辨率柔性AMOLED显示器集成栅极驱动器" 这篇研究论文聚焦于采用金属氧化物薄膜晶体管（TFT）技术实现的高分辨率柔性AMOLED显示面板，其中集成了创新的栅极驱动器。论文的作者包括Wei-Jing Wu、Jun-Wei Chen、Jun-Sheng Wang、Lei Zhou、Hong Tao、Jian-Hua Zou、Miao Xu、Lei Wang、Jun-Biao Peng以及Mansun Chan，他们都是在该领域的专家。首先，文章指出，这种新型的AMOLED显示器具有200(RGB) * 600的像素分辨率，达到了282像素每英寸（PPI），并且其基板采用的是聚酰亚胺材料，这使得整个显示面板具有出色的柔韧性。在不同的曲率半径下，采用背沟道蚀刻结构的柔性In-Zn-O TFTs展示出良好的稳定性，这对于在弯曲或折叠状态下保持显示性能至关重要。论文提出了一种新的栅极驱动器设计，它采用了双面驱动方法，由七个TFT和两个电容器组成。这种设计的优势在于结构简单、功耗低、输出全摆幅（full-swing output）以及占用较小的面积。栅极驱动器是AMOLED显示面板中的关键组件，它控制每个像素的开启和关闭，以形成图像。在显示面板的像素电路部分，论文采用了传统的2T1C（两晶体管一电容）结构，并结合顶部发射结构，以实现更好的显示效果。在进行弯曲测试时，这个柔性AMOLED面板能展现出良好的全彩色显示质量，没有明显的缺陷出现，证明了其在弯曲条件下的可靠性。此外，论文还强调了提出的栅极驱动器输出信号无失真，这表明其在驱动高分辨率像素阵列时能够保持精确的信号传输，对于确保图像质量和色彩一致性至关重要。这样的设计对于未来可穿戴设备、折叠屏幕手机和其他柔性显示应用具有重大的潜在价值。这篇论文揭示了如何通过金属氧化物TFT技术实现高分辨率、柔性的AMOLED显示器，并集成了高效的栅极驱动器，为下一代显示技术提供了重要的理论和实践基础。

1660 IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 11, NOVEMBER 2018

High-Resolution Flexible AMOLED

Display Integrating Gate Driver

by Metal–Oxide TFTs

Wei-Jing Wu ,

Member, IEEE

, Jun-Wei Chen, Jun-Sheng Wang, Lei Zhou, Hong Tao, Jian-Hua Zou,

Miao Xu, Lei Wang, Jun-Biao Peng, and Mansun Chan ,

Fellow, IEEE

Abstract

— This letter proposes a high-resolution

[200 (RGB) ∗ 600, 282 PPI) ﬂexible active matrix organic

light emitting display (AMOLED) integrating a new gate

driver, of which the substrate is a polyimide material.

Flexible In–Zn–O thin-ﬁlm transistors (TFTs) with back

channel etched structure reveal a good stability at different

curvature radii. The integrated gate driver employing

bi-side driving method consists of seven TFTs and two

capacitors with the advantages of simple topology, low

power, full-swing output, and small area. The conventional

2T1C pixel circuit with top emission structure is applied to

the proposed ﬂexible AMOLED panel. And the ﬂexible panel

has a good full-color displayqualitywithout obviousdefects

at the bending condition. It is shown that the output signals

of the proposed gate driver have no distortion and good

noise suppressed characteristicseven up to 600 stages and

maintain stable under a long-time continuous operation up

to 15 days.

IndexTerms

— Flexibleactivematrixorganiclightemitting

display (AMOLED), gate driver, metal oxide thin-ﬁlm

transistors (TFTs).

Manuscript received July 14, 2018; revised August 15,

2018, August 22, 2018, and September 4, 2018; accepted

September 12, 2018. Date of publication September 20, 2018;

date of current version October 23, 2018. This work was supported

in part by the 973 Program through the Ministry of Science and

Technology under Grant 2015CB655004, in part by the National

Natural Science Foundation of China under Grant 61874046, Grant

61574062, and Grant 61574061, in part by the Science and Technology

Program of Guangdong Province under Grant 2015B090914003, Grant

2016B090906002, Grant 2017B090901055, Grant 2017B090901006,

and Grant 2017B090907016, in part by the International Cooperation

Program of Guangzhou Economic and Technological Development Zone

under Grant 2017GH29, in part by the Fundamental Research Funds for

the Central Universities under Grant 2017ZD059, and in part by the Pearl

River S&T Nova Program of Guangzhou under Grant 201806010090.

The review of this letter was arranged by Editor W. S. Wong.

(Corresponding authors: Miao Xu; Jun-Biao Peng.)

W.-J. Wu is with the State Key Laboratory of Luminescent Materials

and Devices, South China University of Technology, Guangzhou 510640,

China, and also with the Department of Electronic and Computer

Engineering, The Hong Kong University of Science and Technology,

Hong Kong.

J.-W. Chen, J.-S. Wang, J.-H. Zou, M. Xu, L. Wang, and J.-B. Peng are

with the State Key Laboratory of Luminescent Materials and Devices,

South China University of Technology, Guangzhou 510640, China

(e-mail: xumiao4049@gmail.com; psjbpeng@scut.edu.cn).

L. Zhou and H. Tao are with New Vision Opto-Electronic

Technology Co., Ltd., Guangzhou 510530, China.

M. Chan is with the Department of Electronic and Computer Engineer-

ing, The Hong Kong University of Science and Technology, Hong Kong.

Color versions of one or more of the ﬁgures in this letter are available

online at http://ieeexplore.ieee.org.

Digital Object Identiﬁer 10.1109/LED.2018.2871045

I. INTRODUCTION

LEXIBLE active matrix organic light emitting dis-

play (AMOLED) has become a very promising ﬂexible

display technology due to its superior characteristics such as

an all solid-state process, a thinner thickness and a lighter

weight [1]–[6]. A uniform, stable thin-ﬁlm transistor (TFT)

backplane fabricated on a ﬂexible substrate at low temperature

is essential for realizing ﬂexible AMOLEDs. Currently, metal

oxide (MO) TFTs have attracted much attention because of

their higher mobility than a-Si:H TFTs, lower fabrication

temperature than LTPS TFTs, good process compatibility with

a-Si:H TFTs, and compatibility with transparent or ﬂexible

applications [7]–[10]. MO TFTs have also been used to

integrate the gate driver in ﬂexible displays, which can avoid

the problem of conventional gate driver ICs being easily

stripped from the plastic substrate during continuous bending.

As a result, there are advantages of both enhancing the

reliability and lowering the fabrication cost of integrating

the gate driver in ﬂexible displays. Moreover, the integrated

gate driver by TFTs is expected to be simpler and faster

to adapt to the diversiﬁcation demand of ﬂexible wearable

devices compared with conventional gate driver ICs [11]–[13].

In addition, it is essential to develop high-resolution ﬂexible

displays for meeting the requirements of high-end ﬂexible

wearable devices. Hence, the remaining area for integrating

the gate driver is limited by the small pixel unit in the

high-resolution display and the requirement of a narrow bezel.

Therefore, it is essential to simplify the topology of the gate

driver and employ a TFT structure with a smaller device area.

For example, as shown in [14], the device area of the back

channel etched (BCE) structure will be smaller than that of the

etch stopper layer (ESL) structure at the same channel length

of 5 μm. In addition, a simple topology with a small number

of TFTs is also helpful to preserve the operation reliability

under bending. As far as we know, high-resolution ﬂexible

AMOLEDs that integrate the gate driver are seldom reported.

This letter proposes a 2.2 inch 200 (RGB) ∗ 600 ﬂexi-

ble AMOLED that integrates a new gate driver with metal

oxide TFTs of BCE structure on a polyimide (PI) substrate.

The proposed gate driver has good output characteristics up

to 600 stages, as well as good stability under long-time

continuous operation.

II. P

ROCESS OF FLEXIBLE AMOLED DISPLAY PANEL

Fig. 1(a) shows the IZO TFTs with BCE structure fabricated

on the polyimide (PI) substrate. The fabrication process of the

See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.

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