Mode-locked fiber laser with a manganese-doped
cadmium selenide saturable absorber
A. H. A. Rosol
1
, H. A. Rahman
1
, E. I. Ismail
2
, Z. Jusoh
3
, A. A. Latiff
4
, and S. W. Harun
2,
*
1
Faculty of Electrical Engineering, University Teknologi Mara, Shah Alam 40450, Malaysia
2
Department of Electrical Engineering, Faculty of Engineering, University of Malaya, Kuala Lumpur 50603, Malaysia
3
Faculty of Electrical Engineering, University Teknologi Mara (Terengganu), Dungun 23000, Malaysia
4
Photonics Research Center, University of Malaya, Kuala Lumpur 50603, Malaysia
*Corresponding author: swharun@um.edu.my
Received January 28, 2017; accepted March 30, 2017; posted online April 20, 2017
We demonstrate the generation of mode-locked pulses in an erbium-doped fiber laser (EDFL) by using a new
manganese-doped cadmium selenide quantum-dots-based saturable absorber. The laser produces a soliton pulse
train operating at 1561.1 nm with a repetition rate of 1 MHz, as the pump power is varied from 113 to 250 mW.
At the maximum pump power, we obtain the pulse duration of 459 ns with a signal-to-noise ratio of 50 dB.
OCIS codes: 140.4050, 140.3500, 160.4236.
doi: 10.3788/COL201715.071405.
Pulsed laser generation was started in the 1980s through
the development of a dye gain medium, followed by a solid
state gain medium a decade later. The research interest
moves to a fiber gain medium in the early 2000s, especially
on generating pulsed fiber lasers because of their compact-
ness and high reliability. The pulsed fiber lasers, such as a
mode-locked erbium-doped fiber laser (EDFL), have of-
fered many applications in various fields, such as telecom-
munication, bio-sensing, and material processing
[1–4]
.
There are different methods for generating a mode-locked
laser; one of the simplest and most effective ways is by us-
ing a passive saturable absorber (SA). To date, various
mode-locked fiber lasers have used a ytterbium-doped fi-
ber (YDF), an erbium-doped fiber (EDF), or a thulium-
doped fiber (TDF) as the gain media
[5–7]
. On the other
hand, various types of SAs have also been reported to pro-
duce mode-locked pulse trains, such as a semiconductor
SA mirror (SESAM)
[8]
, carbon nanotubes (CNT)
[9]
, and
graphene
[10]
. SESAM is readily available on the market.
However, it has limited bandwidth and requires compli-
cated and expensive fabrication. Then, a CNT was regu-
larly used in a mode-locked fiber laser as an SA due to its
rapid recovery time and broad absorption spectrum
[11]
, but
not for its stability. Later, graphene was reported by Bao
et al.
[12]
, who showed it as a promising material for an SA.
Graphene provides several advantages such as a great
saturable absorption modulation depth and fast recovery
time
[13,14]
.
Recently, two-dimensional (2D) nanomaterials, such as
transition metal dichalcogenides (TMDs)
[15]
and black
phosphorus (BP)
[16]
, have also attracted considerable
interest as convincing SA materials for mode-locked fiber
laser application. BP has gained more attraction due to
its narrow direct band gap, which can fill the gap
between graphene and wide band-gap TMDs. However,
BP cannot be exposed to oxygen and water molecule s
due to its hydrophilic properties, which can reduce its
performance
[17,18]
. More recently, a quantum dots (QDs)
semiconductor crystal was established as one of nanoma-
terials groups, which gained attraction for many research-
ers due to its wide range of applications, including
processing a solar cell
[19]
, as a biological device
[20]
, and as
a probe for energy filtered transmission electron micros-
copy (TEM)
[21]
. One of the promising materials in QDs
is cadmium selenide (CdSe), which provides great photo-
electrical properties and a direct band gap of 1.74 eV
[22,23]
for making a photodetector and a photovoltaic system
[24]
.
Moreover, CdSe shows excellent photostability, which
maintains its optical properties for ten days under ambi-
ent conditions
[25]
. The CdSe band-gap size can be reduced
by increasin g the crystal size
[26]
, as well as the impurities
and defects in a CdSe crystal
[27]
. So, the band-gap energy of
CdSe depends on the crystal size, and, thus, it is beneficial
for biological and chemical sensors.
In this Letter, a mode-locked EDFL operating at
1561.1 nm demonstrates manganese (Mn)-doped CdSe
QD as an SA. To the best of our knowledge, this the first
demonstration of mode-locking pulse generation by using
Mn-doped CdSe as a mode locker.
In this work, the first stage of the process is the
fabrication of CdSe powder. The process was similar to
previous reports
[28,29]
, where cadmium oxide (CdO),
selenium (Se), and Mn acetate powders were used as a pre-
cursor. In this process, a mixture of oleic acid and paraffin
oil is prepared as a solvent with a ratio 3:5. After that, the
CdO and Mn acetate powder is mixed with the prepared
solvent under an argon gas flow with a temperature of
160°C by using a three-neck flask. The mixture is then
stirred continuously until all of the powders totally dis-
solve before it is distilled in a vacuum to eliminate any re-
maining acetone. Later, the Se powder is dissolved in
paraffin oil at a 220°C temperature. Lastly, 5 mL of an
Mn–Cd solution was promptly added into the Se–
paraffin-oil solution so that it allowed for a gradual growth
COL 15(7), 071405(2017) CHINESE OPTICS LETTERS July 10, 2017
1671-7694/2017/071405(5) 071405-1 © 2017 Chinese Optics Letters