TMC5160：高性能步进电机驱动器 datasheet

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"TMC5160_Datasheet_Rev1.06.pdf 提供了有关TRINAMIC Motion Control GmbH & Co. KG的TMC5160集成电路的详细信息，该芯片专为驱动2相步进电机设计，最大支持20A的线圈电流（需外接MOSFETs）。" TMC5160是一款针对步进电机的高性能功率驱动器，其特点和优势包括： 1. **2相步进电机驱动**：TMC5160适用于驱动2相步进电机，最大可处理20A的线圈电流。由于电流需求较高，外部需要连接MOSFETs来处理高电流。 2. **六点™斜坡技术**：内置的六点斜坡功能提高了电机控制的精度和稳定性，使得电机加速和减速过程更为平滑。 3. **微步插补（microPlyer™）**：通过Step/Dir接口，TMC5160能够实现微步插补，提供高达256微步/全步的最高分辨率，显著提升了定位精度。 4. **电压范围**：工作电压范围为8到60VDC，适应多种电源条件。 5. **通信接口**：支持SPI和单线UART接口，方便与其他系统集成和通讯。 6. **编码器接口和参考开关输入**：具备编码器接口，可以接收反馈信号以实现更精确的运动控制，同时有两个参考开关输入，用于位置检测和限位保护。 7. **stealthChop2™**：这是一种静音运行技术，减少了电机在运行时产生的噪声，同时提供了平滑的运动。 8. **共振抑制**：针对中频共振，TMC5160有专门的共振抑制功能，确保电机在不同工况下都能保持稳定运行。 9. **spreadCycle™**：这是一种高度动态的电机控制斩波技术，可以实现快速响应和高性能的电机控制。 10. **dcStep™**：负载依赖的速度控制功能，可以根据负载变化自动调整电机速度，确保稳定运行。 11. **stallGuard2™**：高精度无传感器电机负载检测，能有效识别电机是否卡死，提高了系统的可靠性。 12. **coolStep™**：电流控制功能，根据负载状况智能调节电流，最多可节省75%的能源。 13. **被动刹车和自由轮模式**：在电机停止或需要快速切换方向时，可进行被动刹车，自由轮模式则允许电机在无阻尼情况下转动。 14. **全面保护与诊断**：TMC5160集成了各种保护和诊断功能，如过流、过压等，确保系统安全运行。 15. **封装形式**：采用紧凑的9x9mm² TQFP48或8x8mm² QFN封装，适合空间有限的应用。这款集成电路广泛应用在机器人、工业驱动、纺织机械、包装机械、实验室自动化、高速3D打印机、液体处理、医疗设备、办公自动化、闭路电视、ATM和现金循环器、泵和阀门等多个领域。TMC5160以其强大的功能和出色的性能，为各种需要精密步进电机控制的场合提供了理想的解决方案。

TMC5160 DATASHEET (Rev. 1.06 / 2018-JUN-06) 16

www.trinamic.com

Attention

In case VSA is supplied by a different voltage source, make sure that VSA does not drop out during

motor operation. The motor driver should be disabled in case VSA becomes switched off before VS.

Hard switching edges on VSA might result in bridge cross-conduction otherwise. It is safest to derive

VSA voltage from VS supply.

3.2 External Gate Voltage Regulator

At high supply voltages like 48V, the internal gate voltage regulator and the internal 5V regulator

have considerable power dissipation, especially with high MOSFET gate charges, high chopper

frequency or high system clock frequency >12MHz. A good thermal coupling of the heat slug to the

system PCB GND plane is required to dissipate heat. Still, the thermal thresholds will be lowered

significantly by self-heating. To reduce power dissipation, supply an external gate driver voltage to the

TMC5160. Figure 3.2 shows the required connection. The internal gate voltage regulator becomes

disabled in this constellation. 12V +/-1V are recommended for best results.

5V Voltage

regulator

5VOUT

VSA

2.2µ

VCC

2.2µ

12V Gate Voltage

2R2

470n

11.5V Voltage

regulator

12VOUT

Figure 3.2 External gate voltage supply

Hint

With MOSFETs above 50nC of total gate charge, chopper frequency >40kHz, or at clock frequency

>12MHz, it is recommended to use a VSA supply not higher than 40V.

TMC5160 DATASHEET (Rev. 1.06 / 2018-JUN-06) 17

www.trinamic.com

3.3 Choosing MOSFETs and Slope

The selection of power MOSFETs depends on a number of factors, like package size, on-resistance,

voltage rating and supplier. It is not true, that larger, lower RDSon MOSFETs will always be better, as

a larger device also has higher capacitances and may add more ringing in trace inductance and power

dissipation in the gate drive circuitry. Adapt the MOSFETs to the required motor voltage (adding 5-10V

of reserve to the peak supply voltage) and to the desired maximum current, in a way that resistive

power dissipation still is low for the thermal capabilities of the chosen MOSFET package. The TMC5160

drives the MOSFET gates with roughly 10V, so normal, 10V specified types are sufficient. Logic level

FETs (4.5V specified RDSon) will also work, but may be more critical with regard to bridge cross-

conduction due to lower V

GS(th)

The gate drive current and MOSFET gate resistors R

(optional) determine switching behavior and

should basically be adapted to the MOSFET gate-drain charge (Miller charge). Figure 3.3 shows the

influence of the Miller charge on the switching event. Figure 3.4 additionally shows the switching

events in different load situations (load pulling the output up or down), and the required bridge

brake-before-make time.

The following table shall serve as a thumb rule for programming the MOSFET driver current

(DRVSTRENGTH setting) and the selection of gate resistors:

MOSFET MILLER CHARGE VS. DRVSTRENGTH AND R

Miller Charge

[nC] (typ.)

DRVSTRENGTH

setting

Value of R

[Ω]

<10

≤ 15

10…20

0 or 1

≤ 10

20…40

1 or 2

≤ 7.5

40…60

2 or 3

≤ 5

>60

≤ 2.7

The TMC5160 provides increased gate-off drive current to avoid bridge cross-conduction induced by

high dV/dt. This protection will be less efficient with gate resistors exceeding the values given in the

table. Therefore, for larger values of R

, a parallel diode may be required to ensure keeping the

MOSFET safely off during switching events.

MOSFET gate charge vs. switching event

– Total gate charge (nC)

– Gate to source voltage (V)

0 5 10 15 20 25

– Drain to source voltage (V)

MILLER

Figure 3.3 Miller charge determines switching slope

Hints

- Choose modern MOSFETs with fast and soft recovery bulk diode and low reverse recovery charge.

- A small, SMD MOSFET package allows compacter routing and reduces parasitic inductance effects.

TMC5160 DATASHEET (Rev. 1.06 / 2018-JUN-06) 18

www.trinamic.com

MOSFET drivers

BMx

12VOUT

Load pulling BMx down Load pulling BMx up

BBM

Miller plateau

Hx-

BMx

-V

BMx

Miller plateau

Effective break-before-make time

-1.2V

Output

slope

Output

slope

BBM

Figure 3.4 Slopes, Miller plateau and blank time

The following DRV_CONF parameters allow adapting the driver to the MOSFET bridge:

Parameter

Description

Setting

Comment

BBMTIME

Break-before-make time setting to ensure non-

overlapping switching of high-side and low-side

MOSFETs. BBMTIME allows fine tuning of times in

increments shorter than a clock period.

For higher times, use BBMCLKS.

0…24

time[ns]

100ns*32/(32-BBMTIME)

Ensure ~30% headroom

Reset Default: 0

BBMCLKS

Like BBMTIME, but in multiple of a clock cycle.

The longer setting rules (BBMTIME vs. BBMCLKS).

0…15

0: off

Reset Default: OTP 4 or 2

DRV_

STRENGTH

Selection of gate driver current. Adapts the gate

driver current to the gate charge of the external

MOSFETs.

0…3

Reset Default = 2

FILT_ISENSE

Filter time constant of sense amplifier to suppress

ringing and coupling from second coil operation

Hint: Increase setting if motor chopper noise

occurs due to cross-coupling of both coils.

(Reset Default = %00)

0…3

00: ~100ns (reset default)

01: ~200ns

10: ~300ns

11: ~400ns

DRV_CONF Parameters

Use the lowest gate driver strength setting DRVSTRENGTH giving favorable switching slopes, before

increasing the value of the gate series resistors. A slope time of nominal 40ns to 80ns is absolutely

sufficient and will normally be covered by the shortest possible Break-Before-Make time setting

(BBMTIME=0, BBMCLKS=0).

In case slower slopes have to be used, e.g. with large MOSFETs, ensure that the break-before-make

time (BBMTIME, optionally use BBMCLKS for times >200ns) sufficiently covers the switching event, in

order to avoid bridge cross conduction. The shortest break-before-make time, safely covering the

switching event, gives best results. Add roughly 30% of reserve, to cover production stray of MOSFETs

and driver.

TMC5160 DATASHEET (Rev. 1.06 / 2018-JUN-06) 19

www.trinamic.com

3.4 Tuning the MOSFET Bridge

A clean switching event is favorable to ensure low power dissipation and good EMC behavior.

Unsuitable layout or components endanger stable operation of the circuit. Therefore, it is important to

understand the effect of parasitic trace inductivity and MOSFET reverse recovery.

Stray inductance in power routing will cause ringing whenever the opposite MOSFET is in diode

conduction prior to switching on a low-side MOSFET or high-side MOSFET. Diode conduction occurs

during break-before make time when the load current is inverse to the prior bridge polarity, i.e.

following a fast decay cycle. The MOSFET bulk diode has a certain, type specific reverse recovery time

and charge. This time typically is in the range of a few 10ns. During reverse recovery time, the bulk

diode will cause high current flow across the bridge. This current is taken from the power supply

filter capacitors (see thick lines Figure 3.5). Once the diode opens parasitic inductance tries to keep the

current flowing. A high, fast slope results and leads to ringing in all parasitic inductivities (see Figure

3.6). This may lead to bridge voltage undershooting the GND level. It must be ensured, that the driver

IC does not see spikes on its BM pins to GND going below -5V. Measure the voltage directly at the

driver pins to driver GND. The amount of undershooting depends on energy stored in parasitic

inductivities from low side drain to low side source and via the sense resistor RS to GND.

To improve behavior

- Tune MOSFET switching slopes (measure without inductive load) to be slower than the MOSFET

bulk diode reverse recovery time. This will reduce cross conduction.

- Add optional resistors and capacitors to ensure clean switching by minimizing ringing and

reliable operation. Figure 3.5 shows different options.

- Some MOSFETs eliminate this problem by integrating a Schottky diode from source to drain.

Figure 3.7 shows performance of the basic circuit after adapting switching slope and adding 1nF

bridge output capacitors.

GNDD

GNDA

DIE PAD

BMA2

SRAH

Capacitor reduces

ringing on sense resistor.

SRAL

LA1

LA2

HA1

HA2

BMA1

CA1

CA2

‘: optional position for high side slope control resistor.

In case, severe undershooting < -5V of BM occurs at BM

terminal, R

’ will protect the driver.

1µF

Coil

out

47R

‘

Decide use and value of the additional components based on measurements of the actual circuit using the final layout!

100n

1n,

100V

1n,

100V

470pF to a few nF output

capacitors close to bridge reduce

ringing and improve EMC

2n2

RC-Filter protects SRAH /

SRAL and reduces spikes

seen by the chopper

Additional 1A type Schottky Diodes (selected for full VM

range) in combination with R

’ eliminate undershooting of

BM and allow for lower values of R

‘ (e.g., 2R2 to 4R7).

Figure 3.5 Bridge protection options for power routing inductivity

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