Illumination Optics Design for EUV-Lithography
Martin
Wolfgang Singera, Jorg SChUltZa, Johannes Wangler',
Isabel Escudero.Sanzb, Bob Kruizinga'
aCarl Zeiss, D-73446 Oberkochen, Germany
bTNO.TPD N —
2600
Deift, The Netherlands
ABSTRACT
The demanding performance of optical systems for EUV lithography requires new and innovative solutions for the
illumination optics design. The illuminator is one of the key components for EUV-lithography. It has to provide uniform
illumination across the arc-shaped field and to comply with the telecentricity requirements of the projection lens. The
illuminator has to be adapted to size and divergence of an EUV source. The constraint of minimizing the number of optical
elements is compensated for by enhancing the complexity of single optical elements, which in turn challenges fabrication.
In this paper, a comparison of two different solutions for the illuminator is presented. The systems are intended to comply
with the illumination requirements, but have different advantages and drawbacks. The examples represent solutions based
on conical reflection and on a fly's-eye integrator. A comparison is given and the potentials of the different solutions are
outlined.
Keywords: EUV Lithography, illumination optics, dtendue, fly's-eye condenser, conical reflection
1. INTRODUCTION
EUV-lithography constitutes one of the most promising candidates for next generation lithography. The evolution of
semiconductor fabrication demands reduced feature sizes of 50 nm and beyond. This resolution is obtained by the
application of a short wavelength of 13.5 nm and a moderate numerical aperture of 0.2 to 0.3. The image quality of the
lithography system is determined by the projection optics as well as by the performance of the illumination system.
Illumination system design is one of the key challenges of EUV lithography. In today' s lithographic systems, the illuminator
has to deliver invariant illumination across the reticle field. For EUV, several additional requirements have to be addressed:
.
arc-shaped
field
EUV imaging systems need to be realized as reflective optical systems. For this reason, an unobscured pupil and a
highly corrected image field can only be achieved in a small radial range of the image. Hence the field shape is a ring-
field with high aspect ratio of typically 2mm (width) x 22-26mm (arc length) at wafer level. The projection system
operates in scanning mode.
S
reducednumber ofoptical elements
EUV illumination systems will in general be non-centred systems formed by off-axis segments of aspherical mirrors.
The reflectivity of multilayer-coated surfaces is approximately 70% for normal incidence and 90% for grazing
1
In order to maximize efficiency, the number of reflections has to be minimized and elements at grazing
incidence should be used whenever possible.
.
complexity
of elements
In order to achieve the requirements of the illumination system with a limited number of optical components, the
complexity of the components has to be increased. Consequently, the surfaces will be segmented or aspherical. The
shape and size of aspherical mirrors and segmented elements, together with stringent requirements for the surface
quality put a major challenge on manufacturing these components.
•
sources
Several sources are currently being discussed. They differ in system aspects, but also in important illuminator-related
aspects. System aspects are e.g. output power, repetition rate, footprint, cost of ownership. For the illumination system
*
Correspondence:
Email: antoni@zeiss.de; Telephone +49 (0) 7361 204629; Fax: +49 (0) 7361 20 2334
Soft X-Ray and EUV Imaging Systems, Winfried M. Kaiser, Richard H. Stulen, Editors,
Proceedings of SPIE Vol. 4146 (2000) © 2000 SPIE. · 0277-786X/00/$15.00
25
Downloaded From: http://proceedings.spiedigitallibrary.org/ on 10/13/2015 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx